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A Minimum-Complexity 0.35㎛ Surface-Channel CMOS Process for Digital Logic and Analog Applications
Demirlioglu, E.,Yoon, E.,Pierce, J.,Blair, C.,Moverly, L.,Geha, S.,Wei, J.,Ciari, R.,Chen, K.,Kuo, C. S.,Sadjadi, R.,Brown, K.,Sethna, P.,Bariya, A.,Rocchetta, S. Della 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
This paper presents a minimum-complexity 0.35 ㎛ CMOS technology with high performance and law mask count. Scaled LOCOS isolation and implantation through the field oxide allow a simplified process flow and provide adequate isolation at minimum active pacing. This architecture produces a retrograde well structure without requiring a MeV-energy implant. Surface channel PMOS and NMOS transistors with double diffused drains and silicide give high drive currents of 0.23 and 0.47mA/㎛, respectively, and low off-state leakage below 10pA/㎛ at drain voltage of 3.3 V.
GaAs Power MESFETs for Personal Communications at 850 MHz
Lee,J. L.,Mun,J. K.,Kim,H.,Kwon,O. S.,MaEng,S. J.,Lee,J. J.,Lee, H. G.,Yoon,K. J.,Jeon,K. L.,Hong,S. C.,Koo,K. H.,Lee,C. S.,Park,S. S.,Kim,D. K.,Hwang,I. D.,Park,H. M.,Park,S. C. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
GaAs power metal semiconductor field effect transistors (MESFETs) were fabricated on 3 GaAs wafer with a low-high doped structure, grown by molecular beam epitary (M$E). The fabricated MESFETs with a gate width of 7.5 mm show a saturated drain current (Idss) of I.7A and .an uniform transconductance (Gm) of around 600mS, ranged from Vgs = -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to higher than 25 V. The rf characteristics of the MESFETs at a frequency of 836.5 MHz are measured to 1.5 W of the output power and 61% of dower added efficiency (PAE) under a drain bias condition of 5.8 V and a 10% Idss of 160 mA (Class AB), and to 1.2 W of the output power and 58% of PAE under a drain bias of 4.7 V. When the drain bias reduced to 3.5V, 0.65 W of the output power and 58% of PAE were obtained. This suggests that the low-high doped structure designed in the present work is effective to low voltage operation of the power FET in the application of digital, portable radio communication.
박성배,김기현,이태원,김현철,김형규,이시래,한대석,이영규,김성권,강성구,한진석,이호영,이상운,김경진,이정상,이인수,고광욱,최용,정해일,홍관수,방병기,이희발,임천규,고행일,최의진,원대식,황승덕,임중규,김규순,오형석,최창필,허용진,표석주,전성주,최두혁,김민철,정석호,전건웅,강종명,박한철,김명재,박민선 대한신장학회 1987 Kidney Research and Clinical Practice Vol.6 No.2
This retrospective multicenter cooperative study analyses clinical data from 1,106 CAPD patients treated at22 dialysis centers over the past 6 years and 4 months' period between March 1981 and July 1987. This represents above 90% of all CAPD patients estimated from 81.5% of all centers known to have offered CAPD in Korea during the study period. At the end of the study period 57.7% were still on CAPD, 11.9% were tansferred to hemodialysis, 10.9% died while on CAPD and 3.6% discontinued CAPD and lost to followup. Of 171 patients who were transferred to hemodialysis or lost to followup after discontinuing CAPD, 117 patients or 68.4% did so because of peritonitis. During 1,343.3 patient-years of CAPD, 2,419 episodes of peritonitis developed at the rate of 1.80 episodes per patient-year. The first episode of peritonitis occurred within one week of beginning CAPD in 15.8%, whithin 4 wks in 35.6%, within 6 months in 79.7% and within 1 year in 94.4% of those who experienced peritonitis. Gram-positive organisms were responsible for 66.4% of all peritonitis episodes: Coagulase-negative Staphylococci (31.3%) being the most common organisms. The rate of positive culture was unacceptably low at 25.3%. Female sex, use of Peritosol and Tenckhoff single cuff catheter appeared to be risk factors for peritonits. Age and underlying diseases did not appear to be risk factors. The results of this study suggest that more efforts are needed to reduce peritonitis rates. Associated risk factors for peritonitis should be identificed and Y-connector andi'or measures to strengthen systemic and peritoneal defense mechanisms should be evaluated in the future prospective studies.