http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Control of Laser-induced Mechanical Effects by Using a Dual-wavelength Irradiation Method
백준혁,양승진,김재영,장경민,박종락,염동일,김지선,김형식,전재훈,정순철 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.12
A straightforward method of controlling laser-induced mechanical effects in biological tissues is to regulate the pulse energy of the irradiating laser. Because the local temperature of the irradiated region rises as the laser’s pulse energy increases, this method cannot independently control purely mechanical effects without changing the thermal effects. Here, a dual-wavelength irradiation method is proposed in which biological tissues are irradiated simultaneously by using two laser pulses with different wavelengths, and laser-induced mechanical effects are continuously controlled with no change in the maximum temperature increase by systematically varying the energy of each laser pulse. The proposed method is analyzed, and its feasibility is demonstrated through numerical simulations.
김영민,김남경,염승진,장건익,류성림,선호정,권순용,Kim, Young-Min,Kim, Nam-Kyeong,Yeom, Seung-Jin,Jang, Gun-Eik,Ryu, Sung-Lim,Sun, Ho-Jung,Kweon, Soon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.
김재영,장경민,양승진,백준혁,박종락,염동일,김지선,김형식,전재훈,정순철 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.8
We studied the thermal and the mechanical effects induced by pulsed laser absorption in human skin by numerically solving the heat-transfer and the thermoelastic wave equations. The simulation of the heat-transfer equation yielded the spatiotemporal distribution of the temperature increase in the skin, which was then used in the driving term of the thermoelastic wave equation. We compared our simulation results for the temperature increase and the skin displacements with the measured and numerical results, respectively. For the comparison, we used a recent report by Jun et al. [Sci. Rep. 5, 11016 (2015)], who measured in vivo skin temperature and performed numerical simulation of the thermoelastic wave equation using a simple assumption about the temporal evolution of the temperature distribution, and found their results to be in good agreement with our results. In addition, we obtained solutions for the stresses in the human skin and analyzed their dynamic behaviors in detail.
Self assembled-monolayer(SAM)법을 이용한 TaN 확산방지막의 무전해 Cu 도금용 Pd seed layer 제조 및 특성
한원규,조진기,최재웅,김정태,염승진,곽노정,김진웅,강성군,Han, Won-Kyu,Cho, Jin-Ki,Choi, Jae-Woong,Kim, Jeong-Tae,Yeom, Seung-Jin,Kwak, Noh-Jung,Kim, Jin-Woong,Kang, Sung-Goon 한국재료학회 2007 한국재료학회지 Vol.17 No.9
Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.
고분해능 전자현미경법을 이용한 (Bi, La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> 박막의 결정학적 특성 평가
이덕원,양준모,박태수,김남경,염승진,박주철,이순영,박성욱,Lee, Doek-Won,Yang, Jun-Mo,Park, Tae-Su,Kim, Nam-Kyung,Yeom, Seung-Jin,Park, Ju-Chul,Lee, Soun-Young,Park, Sung-Wook 한국재료학회 2003 한국재료학회지 Vol.13 No.7
The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.