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CVD법으로 제조한 탄소 나노튜브의 전계 전자 방출 특성
이임렬,Lee, Rhim-Youl 한국재료학회 2003 한국재료학회지 Vol.13 No.7
The microstructure and field emission properties of carbon nanotubes(CNT) grown by Ni-catalytic chemical vapor deposition(CVD) were investigated. CVD-grown CNT had a high density of curved shape with randomly oriented. It was found that an increase in electric field caused an increase in field emission current and field emission sites of CNT. The maximum field emission current density was measured to be 3.6 ㎃/$\textrm{cm}^2$ at 2.5 V/$\mu\textrm{m}$, while the brightness of 56 cd/$\textrm{cm}^2$ was observed for the CNT-grown area of 0.8 $\textrm{cm}^2$ from a phosphor screen. Field emission current at constant electric field gradually decreased initially and then stabilized with time.
연료극 지지체식 원통형 고체산화물 연료전지의 제조 및 특성
송근숙,송락현,임영언,Song, Keun-Sik,Song, Rak-Hyun,Ihm, Young-Eon 한국재료학회 2002 한국재료학회지 Vol.12 No.9
A low temperature anode-supported tubular solid oxide fuel cell was developed. The anode-supported tube was fabricated using extrusion process. Then the electrolyte layer and the cathode layer were coated onto the anode tube by slurry dipping process, subsequently. The anode tube and electrolyte were co-fired at $140^{\circ}C$, and the cathode was sintered at $1200^{\circ}C$. The thickness and gas permeability of the electrolyte depended on the number of coating and the slurry concentration. Anode-supported tube was satisfied with SOFC requirements, related to electrical conductivity, pore structure, and gas diffusion limitations. At operating temperature of $800^{\circ}C$, open circuit voltage of the cell with gastight and dense electrolyte layer was 1.1 V and the cell showed a good performance of 450 mW/$\textrm{cm}^2$.
반응성 때려내기 방법에 의한 스피넬 형 ZnCo<sub>2</sub>O<sub>4</sub> 박막의 성장과 전기적 물성
송인창,김현중,심재호,김효진,김도진,임영언,주웅길,Song, In-Chang,Kim, Hyun-Jung,Sim, Jae-Ho,Kim, Hyo-jin,Kim, Do-jin,Ihm, Young-Eon,Choo, Woong-Kil 한국재료학회 2003 한국재료학회지 Vol.13 No.8
We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.
이종국,최남규,서동석,Lee Jong-Kook,Choi Nam-Kyu,Seo Dong-Seok 한국재료학회 2005 한국재료학회지 Vol.15 No.5
Silver nanoparticles were synthesized by chemical reduction method from aqueous silver nitrate solution ana hydrazine as a reduction agent. The morphology, particle size and shape were dependent on the mixing method, reaction temperature and time, molar ratio of hydrazine and silver nitrate, the kind of surfactant, and the addition of surfactant. The stability of the colloidal silver was achieved by the adsorption of surfactant molecules onto the particle. Silver nanoparticles have a characteristic absorption maximum at 430 nm under UV irradiation. It was found that the colloid was nanometer m size and formed very stable dispersion of silver. The Ag nanoparticles obtained showed the spherical shape with the size range of 10-30 nm.
Contact Barrier metal용 LPCVD W막의 전기적 특성에 대한 $SiH_4/WF_6$비의 효과
이종무,박원구,임영진,손재현,김형준,Lee, Jong-Mu,Park, Won-Gu,Im, Yeong-Jin,Son, Jae-Hyeon,Kim, Hyeong-Jun 한국재료학회 1993 한국재료학회지 Vol.3 No.6
Conatact barrier metal용 selective W CVD 기술에서 $SiH_4//WF_6$(=R)유량비가 W막의 비저항, contact resistance, 접합주설전류 등의 전기적 특성에 미치는 영향을 $\beta$-W 의 생성에 촛점을 맞추어 조사하였다. R의 증가에 따라 W의 비저항이 증가하는데, 그 주원인은 $\alpha$-W로 부터 $\beta$-W 로의 상변태에 있다. $SiH_{4}$환원에 의한 CVD W에서 생성되는 $\beta$-W 는 산소에 의해서가 아니라 막내에 유입된 Si에 의하여 안정화된다. Si기탄상에 W를 증착할 때에는 R값이 클 경우에 $\beta$-W 가 생성되지만, TiN 기판상에 W를 증착할 때에는 R값이 큰 경우에도 $\beta$-W 가 생성되지 않는 것으로 나타났다. 또한 R이 증가함에 따라 접합누설전류가 증가하는데, 이것은 W-Si계면에 대한 수직방향으로의 Si의 소모뿐만 아니라 수평방향으로의 Si의 소모에도 그 원인이 있는 것으로 보인다. Effects of $SiH_4//WF_6$(=R) ratio on the electrical properties of W films such as resistvity, contact resistance, junction leakage current in the selective W CVD technology for contact barrier metal were investigated with the emphasis on the role of $\alpha$-W Resistivity of W increases with increasing R, which is primarily due to the phase transformation from $\alpha$-W to , $\alpha$-W. $\alpha$-W found in the SiH4 reduced CVD W film is stabilized by Si incorporated into the W film rather than by oxygen. $\alpha$-W is found in the W film deposited on the Si substrate for high R, while $\alpha$-W is not found in the W film deposited on the TiN substrate even for high R. Also junction leakages increase with increasing R, which is caused not only by the vertical Si consumption but also the lateral Si consumption.
Y<sub>2</sub>O<sub>3</sub> : Eu<sup>3+</sup> 적색 형광체의 발광특성
유일,Yu, Il 한국재료학회 2021 한국재료학회지 Vol.31 No.10
Y<sub>2</sub>O<sub>3</sub>:Eu<sub>x</sub> (x = 0.005, 0.01, 0.02, 0.03, 0.05, 0.1 mol) phosphors are synthesized with different concentrations of Eu<sup>3+</sup> ions by solvothermal method. The crystal structure, surface and optical properties of the Eu doped Y<sub>2</sub>O<sub>3</sub> phosphors are investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) and photoluminescence excitation (PLE) analyses. From X-ray diffraction (XRD) results, the crystal structure of the Eu doped Y<sub>2</sub>O<sub>3</sub> phosphor is found to be cubic. The maximum emission spectra of the Eu doped Y<sub>2</sub>O<sub>3</sub> phosphors are observed at 0.05 mol Eu<sup>3+</sup> concentration. The photoluminescence of 615 nm in the Eu doped Y<sub>2</sub>O<sub>3</sub> phosphors is associated with <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> transition of Eu<sup>3+</sup> ions. The decrease in emission intensity of 0.1 mol Eu doped Y<sub>2</sub>O<sub>3</sub> is interpreted by concentration quenching. The International Commission on Illumination (CIE) coordinates of 0.05 mol Eu doped Y<sub>2</sub>O<sub>3</sub> phosphor are X = 0.6547, Y = 0.3374.
D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구
김명호,이도재,이광민,김운섭,김민기,박범수,양국현,Kim, Myoung-Ho,Lee, Doh-Jae,Lee, Kwang-Min,Kim, Woon-Sub,Kim, Min-Ki,Park, Burm-Su,Yang, Kook-Hyun 한국재료학회 2008 한국재료학회지 Vol.18 No.10
TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.
선택적 레이저 용융 공정으로 제조된 AISI 316L 합금의 인장 및 충격 인성 특성에 미치는 응력 완화 열처리의 영향
양동훈,함기수,박순홍,이기안,Yang, Dong-Hoon,Ham, Gi-Su,Park, Sun-Hong,Lee, Kee-Ahn 한국분말재료학회 (*구 분말야금학회) 2021 한국분말재료학회지 (KPMI) Vol.28 No.4
In this study, an AISI 316 L alloy was manufactured using a selective laser melting (SLM) process. The tensile and impact toughness properties of the SLM AISI 316 L alloy were examined. In addition, stress relieving heat treatment (650℃ / 2 h) was performed on the as-built SLM alloy to investigate the effects of heat treatment on the mechanical properties. In the as-built SLM AISI 316 L alloy, cellular dendrite and molten pool structures were observed. Although the molten pool did not disappear following heat treatment, EBSD KAM analytical results confirmed that the fractions of the low- and high-angle boundaries decreased and increased, respectively. As the heat treatment was performed, the yield strength decreased, but the tensile strength and elongation increased only slightly. Impact toughness results revealed that the impact energy increased by 33.5% when heat treatment was applied. The deformation behavior of the SLM AISI 316 L alloy was also examined in relation to the microstructure through analyses of the tensile and impact fracture surfaces.