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윤준식,박규호,윤철상,박준석,안달 호서대학교 반도체제조장비국산화연구센터 2000 학술대회 자료집 Vol.2000 No.1
일반적으로 LPA에서는 위상을 조정하기 위해 매우 긴 지연선을 필요로 한다. 지연성능은 고전력이나 저전력 모두에서 임의의 길이의 동축선로를 여러번의 과정을 거쳐 적용해봄으로써 구현된다. 그러나 동축선로형 지연선은 부피나 높은 삽입손실등의 제약이 많이 따른다. 본 논문에서는 마이크로스트립 형태의 지연선 대역통과 여파기를 설계하였고, 실험결과는 지연선여파기가 동축선로를 대신하여 LPA 시스템에 적용이 가능함을 보였다.
윤성중,류권일,고영헌,김팔규 忠南大學校 産業技術硏究所 2003 산업기술연구논문집 Vol.18 No.2
The purpose of this paper is development of the most suitable backfill material which increases thermal stability and decreases thermal resistances for increasing capacity of the transmission of electricity. In order to proceed this study, the sand which recently was used as backfill material and the stone dust as single material for most suitable backfill material was chosen and experiments on thermal character and basic soil properties were proceeded for appreciating stability and economical efficiency. As a result of this study, natural moisture content of stone dust was higher than that of sand and porosity of stone dust and thermal resistance of stone dust was lower than that of sand. Then the stone dust are expected to increase capacity of the transmission of electricity. In point of stability, because total strain of pipe was within allowed strain, two materials are expected to ensure against risks. Stone dust is considered as useful backfill materials by contributing great economical efficiency, because a price of stone dust is half to the sand.
광대역 입력신호를 위한 선형 트랜스컨덕터와 Multiplier의 설계
尹暢焄,吳成根,辛烘圭,金東龍 全北大學校 1993 論文集 Vol.36 No.-
The linear transconductor and analog four-quadrant multiplier are designed. The DDA(differential difference amplifier) of new active component can be improved matching problems of external elements in op-amp application circuits. We have designed transconductor which have excellent linearity and is the most important block in DDA. And analog four-quadrant multiplier is designed using the designed transconductor and MOSIS 2㎛ design rule. We are simulated the linear transconductor and analog multiplier by SPICE program.
김상호,이수영,윤임중,이승한,조규상,김영제 카톨릭대학산업의학센타 산업의학연구소 1972 韓國의 産業醫學 Vol.11 No.3
Among the pneumoconiosis, the silicosis is an occupational lung disease, ordinally due to prolonged inhalation of air containing free silicon dioxide. We had chance to perform autopsy of three cases of silicotuberculosis. Both lungs with hard and contracted appearance, were showed massive fibrous adhesion to pleura and also revealed gritty appearance on cut sectioning, and the cut surfaces were shown dark greenish to black pigmentation. Characteristically, many dense black or grey colored silicotic nodules measuring upto 1-4 mm in diameter, with anthracotic pigments distributed throughout both lung parenchyma especially along the peribronchial regions in all three cases, commonly. Microscopically, the nodules were noted as the mass of concentrically laminated dense fibrotic tissue. In addition to those findings, the pulmonary parenchymas were replaced by wide areas of fibrosis and also accompanied with exudative and productive form of tuberculosis (common in all three cases), bronchopneumonia (except case-1) and also compensating emphysema, atelectatic lesions. At the peripheral areas of the silicotic nodules, focal accumulation of the plasma cells, lymphocytes and many foci of endarteritis were shown in three cases, commonly. The silica was confirmed by polarizing microscopy as birefringent, white colored crystals.
Si-Schottky障壁型의 大陽電池 製作에 관한 硏究
李相潤,羅炳旭,朴德圭,李鍾德,金奎用,玄東杰,禹洪,盧景錫 慶北大學校 物理化學硏究所 1981 硏究論文集 Vol.1-2 No.-
The characteristics of these Si-schottky barrier type and Heterojunction type solar cells are as follows; 1. SnO_2/n-Si Heterojunction Solar Cells Fabricated by Spray Pyrolysis Method SnO_2 film were deposited on the (100) or (111) surface of Si single crystal by the spray pyrolysis method. The best SnO_2/n-Si solar cell has a good performance, with an open-circult voltage: Voc.=0.45V, short circuit current: Isc.=35.5㎃, fill factor: FF.=0.64, and conversion efficiency: η=10.2% under 98㎽/㎠ irradiation of AMl. The spray pyrolysis described in this paper is simple and suitable for mass production. One possibility for cost reduction lies in this method of junction fabrication, and the idea of simply deposited SnO_2/n-Si junction is, at first sight, very attractive. Hence the SnO_2/n-Si Solar Cell and the effectiveness of this method may be of great value in some future production of low-cost solar cells. 2. In_2O_3: Sn Heterojunction Solar Cells Fabricated by Spray Pyrolitic Method Highly conductive and transparent thin films of In_2O_3: Sn (ITO) are fabricated by spray pyrolytic method. The parameters of these thin films are as follows: resistivity ρ = 1.5×10 exp (-3) Ω·㎝, carrier concentration n = 7.5×10 exp (19) cm^-3, mobility μ = 55.5 ㎠/V·sec and transmission 85-90% over visible and long wave-length region. These thin films have simple cubic system with lattice constant 10.2Å. In_2O_3: Sn/n-Si heterojunction solar cells are fabricated, depositing In_2O_3: Sn (ITO) thin films on n-Si substrates with orientation(100) and resistively 2-3Ω, ㎝ by spray pyrolitic method. Under AMl sunlight simulator, the parameters of the excellent cell obtained has open-circuit voltage Voc=0.52V, short-circuit current I_sc=39.0㎃, fill factor: F.F=0.60 and conversion efficiencyη=12.1%. 3. Al/p-Si MOS Solar Cells Fabricated by Vacuum Evaporation Method Al/p-Si MOS solar cells, consisting of Al on P-tupe silicon with a thin interfacial layer of SiO_2 have been found to have good light conversion efficiency for solar radiation. The effects of the oxide layer thickness between metal and substrate were investigated. Under AMl simulated sunlight illumination the best cell has open circuit voltage Voc=0.50V, short-circuit current I_sc=26.3㎃/㎠, fill-factor FF=0.70 and conversion efficiency η=9.2%. 4. Cr-Cu/P-Si MOS Solar Cells Fabricated by Vacuum Evaporation Method Cr-Cu/p-Si MOS Solar cells, consisting of Cr-Cu on p-type silicon with a thin interfacial layer of SiO_2 have been found to have good light conversion efficiency for solar radiation. The effects of the oxide layer thickness between metal and substrate were investigated. Under AMl simulated sunlight illumination the best cell has open circuit voltage Voc=0.49V, short-circuit current I_sc=26.4㎃, fill-factor: FF=0.72 and conversion efficiency η=9.3%.
김상규,이상한,장현중,우길상,이은진 대한악안면성형재건외과학회 2002 Maxillofacial Plastic Reconstructive Surgery Vol.24 No.1
Condylar hyperplasia is an uncommon malformation of the mandible created by excessive growth of one of the condyles. Condylar hyperplasia is a self-limiting condition, and treatment is determined by the degree of functional difficulty and aesthetic change. Some patients can be treated with unilateral condylectomy, whereas others require unilateral or bilateral mandibular osteotomies. Our method includes a condylectomy to arrest the continued condylar growth or to excise the neoplastic condyle, unilateral vertical ramus osteotomy to allow horizontal rotation of the mandible without significantly altering the temporomandibular articulations, and an arthroplasty by superior repositioning of the stump of the proximal condylar segment into the condylar fossa. Both the facial asymmetry and the occlusion were corrected by rotation of the mandible around the unaffected condyle.