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PLD 법으로 증착된 n-ZnO:In/p-Si (111) 이종접합구조의 특성연구
장보라,이주영,이종훈,김준제,김홍승,이동욱,이원재,조형균,이호성,Jang, Bo-Ra,Lee, Ju-Young,Lee, Jong-Hoon,Kim, Jun-Je,Kim, Hong-Seung,Lee, Dong-Wook,Lee, Won-Jae,Cho, Hyeong-Kyun,Lee, Ho-Seong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.5
ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.
장보라,심현주,김용익,정진안,오영석,김상섭,최병정,이은택,Jang, Bo-Ra,Shim, Hyun-Ju,Kim, Yong-Ick,Chung, Jin-An,Oh, Young-Suk,Kim, Sang-Seup,Choi, Byong-Jeong,Lee, Eun-Taik 한국강구조학회 2010 韓國鋼構造學會 論文集 Vol.22 No.4
본 연구의 목적은 모멘트 접합 골조에서 각형강관 기둥-H 형강 보 접합부의 내진성능평가이다. 각형강관은 H형강에 비해서 효율적이고 많은 장점이 있음에도 불구하고, 아직 접합 디테일의 부족과 경험 부족 등의 이유로 현장에서 적용이 제한적이다. 각형강관을 사용한 기존의 모멘트 접합부는 주로 관통형 다이아프램 형식을 사용하고 있는데 이는 시공과정이 복잡하여 현장에서의 적용을 어렵게 한다. 그러므로 이 연구에서는 각형강관 기둥을 절단하지 않는 접합상세에 대하여 구조성능 및 내진성능을 평가하고자 하였다. 엔드플레이트와 헌치를 이용한 용접접합의 접합상세에 대하여 내력 및 강성, 에너지흡수능력을 비교분석하였다. The objective of this paper is to examine the structural performance of steel moment-resisting frames on the various connection details of Seismic Wide-flanged Beam-to-Rectangular Steel Tube Column connections. Although compared to an H-shaped steel tube, a rectangular steel tube has many advantages and is more efficient, its application is limited due to the lack of experience in using it and the connection details. Existing steel moment connections using the rectangular steel tube are mainly used through plate diaphragms. The processing of construction of the rectangular steel tube is so complicated that it is hard to apply it in the field. In this study, the structural performance and the earthquake capacity of the connection details that do not cut the rectangular steel tube column were investigated. A comparative analysis of the strength, rigidity, and energy absorption capacity of the welded connection details using an end-plate and a haunch was also performed.
열처리 온도에 따른 MgZnO 박막의 구조적, 광학적 특성연구
장보라,이주영,이종훈,김홍승,구지은,배기열,이원재 한국물리학회 2010 새물리 Vol.60 No.4
We have examined the effects of thermal annealing on the structural and optical properties of MgZnO films. MgZnO films were deposited on ZnO/Sapphire (0001) substrates by Pulsed laser deposition method and were annealed in N₂ambient at temperature from 500℃ to 800℃ for 1 h. The results of x-ray diffraction showed that the crystal quality of the MgZnO films were improved by annealing treatment and the Mg contents were increased with increasing annealing temperature. However, crystallinity of MgZnO film annealed at 800℃ was degraded due to re-evaporation on the film’s surface. From the results of Photoluminescence, while MgZnO films showed UV emission around 380 nm and there was no shift regardless of the annealing temperature, MgZnO film annealed at 600℃ had deep level emission about 510 nm (Green emission) and the deep level intensity was increased as well as the intensity ration of the UV/deep level emission was decreased with increasing annealing temperature. 펄스레이저 증착법을 사용하여 ZnO/Sapphire (0001)위에 MgZnO 박막을 성장시켰으며 이후 후속 열처리 과정을 통해 온도에 따른 MgZnO 박막의 구조적, 광학적 특성을 조사하였다. X-선 회절분석 결과 열처리 온도가 높아질수록 박막의 결정성은 향상되었으며 박막내의 Mg 양도 증가하였다. 그러나 800℃에서의 열처리는 표면에서의 증발을 일으켜 결정성을 감소시켰다. 광 발광특성에서는 열처리 온도와는 상관없이 380 nm 부근에서 UV 발광을 가지며 UV 피크의 이동은 관찰되지 않았다. 그러나 600℃이상의 고온에서 열처리된 MgZnO박막은 510 nm 부근에서의 녹색발광을 가졌다. 또한 온도가 높아 질수록 불순물 발광강도는 증가하여 UV 발광 강도에 대한 불순물 발광 비율이 감소하였다.
장보라,홍철암,이혁진 한국공업화학회 2015 한국공업화학회 연구논문 초록집 Vol.2015 No.1
A large-scale production of DNA nanostructures for siRNA delivery has been achieved by an isothermal enzymatic process of rolling circle amplification (RCA). Our system allowed the preparation of more than 200-fold of amplified DNA products using a ss circular DNA template. Y-shaped DNA nanostructures with sticky overhangs, which can hybridize with siRNAs, were generated through the programmed molecular self-assembly. The DNA nanostructures loaded with folate conjugated-siRNAs showed enhanced cellular uptake as well as dose-dependent gene silencing.
저 함량의 In이 도핑된 n-ZnO:In/p-Si(111) 이종접합 구조 다이오드의 특성연구
장보라,이주영,이종훈,김준제,김홍승,이원재,조채용 한국물리학회 2009 새물리 Vol.58 No.4
In this paper, ZnO films doped with different contents of low-mole-fraction indium (0.1 at.%, 0.3 at.%, and 0.6 at.%) were deposited on Si (111) substrates by using pulsed laser deposition (PLD) at 600℃ for 30 min. The results of X-ray diffraction showed that with the addition of In, the peak of the (10l) plane appeared instead of the peak of (002) plane, which is only exhibited with c-axis-oriented growth. In the photoluminescence result, the In-doped ZnO films had UV emission at about 380 nm and showed a red shift with increasing content of In. From the results of the Hall measurement, in the In-doped ZnO films, the electron concentration was ten times higher than that of an undoped ZnO film while the resistivity was ten times lower than that of undoped ZnO film. The I-V curves of the fabricated diodes showed the typical diode characteristics and had a turn-on voltage of about 2V. 저 함량의 In (0.1, 0.3, 0.6 at.%)이 도핑된 ZnO 타겟을 사용하여 도핑 농도 변화에 따른 ZnO:In 박막의 특성을 조사하였다.~펄스 레이저 증착법을 사용하여 p-Si (111) 기판 위에 600℃에서 30분간 증착하였다.X-선 회절 분석 결과 In의 첨가로 인해 (002)면의 피크만 존재하는 c-축 우선성장 박막에서~(10l)면 피크가 존재하였다. 광 발광 특성에서 도핑된 In의 양이 증가할수록 UV 발광 피크의 강도는 감소하며 장파장으로 이동함을 보였다.~홀 측정 결과 ZnO:In 박막은 ZnO 박막에 비해 10배 정도 높은 전자 농도 (~1018 /cm2)를 가지며 비저항 역시 10배 낮은 값 (~10−2Ωcm)을 보였다.I-V 특성 측정 결과 전형적인 다이오드의 특성 곡선을 보여주고 있었으며 대략 2 V의 순방향 전압을 보였다.