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원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교
이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2
Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.
HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구
이원준,박미선,장연숙,이원재,하주형,최영준,이혜용,김홍승,Lee, Won-Jun,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Ha, Ju-Hyung,Choi, Young-Jun,Lee, Hae-Yong,Kim, Hong-Seung 한국결정성장학회 2016 한국결정성장학회지 Vol.26 No.3
본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다. In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.
SiH<sub>2</sub>Cl<sub>2</sub> 와 O<sub>3</sub>을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성
이원준,이주현,한창희,김운중,이연승,나사균,Lee Won-Jun,Lee Joo-Hyeon,Han Chang-Hee,Kim Un-Jung,Lee Youn-Seung,Rha Sa-Kyun 한국재료학회 2004 한국재료학회지 Vol.14 No.2
Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.
HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성
이원준,박미선,이원재,김일수,최영준,이혜용,Lee, Won Jun,Park, Mi Seon,Lee, Won Jae,Kim, Il Su,Choi, Young Jun,Lee, Hae Yong 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6
An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.
판재 점진 성형 공정의 정밀도 향상을 위한 다이 구조 개선에 대한 연구
이원준,김민석,선민호,유제형,이창환,LEE, Won-Joon,KIM, Min-Seok,Seon, Min-Ho,YU, ․Jae-Hyeong,Lee, Chang-Whan 한국금형공학회 2022 한국금형공학회지 Vol.16 No.2
Unlike other press forming processes, ISF (Incremental sheet forming) doesn't require a punch and die set. However, during the ISF processes unwanted bending deformation occurred around the target geometry. This paper is aimed to analyze the effect of the die structure, which is supported by bolts, on the geometric accuracy of the ISF processes. In this research, the ISF processes with Al5052 sheet of 0.5 mm, the tool diameter of 6 mm and the stepdown of 0.4 mm was employed. L-shaped, step-shaped, relief-shaped geometry were employed in experiments. Sectional view and the plastic strain were compared. From this research we find out that the bolt supported ISF processes increases the geometric accuracy of products very effectively.
FFS모드의 투과율 향상을 위한 새로운 화소전극 구조제안
이원준,박우상,Lee, Won-Jun,Park, Woo-Sang 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.11
In this study, we propose a new pixel edge shape of the fringe field switching(FFS) mode which ensures more stable movement of liquid crystal molecules and higher transmittance at the edge part. the electro optical properties were calculated 3-dimensionally using by commercially available "Techwiz LCD". From the simulation results, we showed that the dynamic stability of liquid crystal molecules was obtained in a new pixel structure. We also revealed that the transmittance of the new pixel structure increased more than 6 % compared to that of the conventional pixel structure.
세노스피어(Cenosphere)의 입도 분포에 따른 물리적 특성 및 광학적 특성 평가
이원준,황해진,한규성,황광택,조우석,김진호,Lee, Won-Jun,Hwang, Hae-Jin,Han, Kyu-Sung,Hwnag, Kwang-Taek,Cho, Woo-Suk,Kim, Jin-Ho 한국재료학회 2017 한국재료학회지 Vol.27 No.7
Recycled cenosphere, which is a hollow shaped particle from fly ash, has become attractive as a building material due to its light weight and excellent heat insulation and soundproof properties. In this paper, we investigated the effect of cenosphere size on the physical and optical properties. High brightness of cenosphere as raw material is required for a wide range of ceramics applications, particularly in fields of building materials and industrial ceramic tiles. Cenospheres were sorted by particle size; the microstructure was analyzed according to the cenosphere size distribution. Cenospheres were generally composed of quartz, mullite, and amorphous phase. Colour measurement corresponding to chemical composition revealed that the contents of iron oxide and carbon in the cenospheres were the major factors determining the brightness of the cenospheres.
Design Issues and QoS Negotiation Protocol Model for Networked Multimedia Systems
이원준,Lee, Won-Jun Korea Information Processing Society 2002 정보처리학회논문지 C : 정보통신,정보보안 Vol.9 No.5
This Paper describes our experiences with the design and implementation of a networked multimedia information management system in an object-oriented framework for distributed multimedia applications, and an integrated QoS-resource negotiation protocol which has been applied to a video server in our networked multimedia infrastructure. The salient features of our framework to support efficient multimedia streaming are explained. Next the paper explores the challenges faced in integrating the proposed QoS negotiation policy into the framework. 본 논문에서는 분산 멀티미디어 응용을 위한 객체 지향형 프레임워크 방식으로 설계된 네트워크 멀티미디어 관리 시스템 개발에 관한 설계 이슈 및 프로토타입 개발 경험을 기술하고, 특히 멀티미디어 관리 시스템의 일부로서 개발한 비디오 서버 상에 적용 가능한 통합형 QoS-자원 협상 프로토콜의 주요 특징에 관하여 설명한다. 구현된 멀티미디어 프레임 워크 상에서 효율적인 멀티미디어 스트리밍을 지원하기 위하여 새로 제안된 QoS 협상 정책을 실제 서버에 적용하는데 있어서 고려해야 할 중요 이슈에 대해서도 분석하였다.
서스펜션 플라즈마 용사법을 이용한 7.5 wt% Y<sub>2</sub>O<sub>3</sub>-ZrO<sub>2</sub> 열차폐코팅 제조 및 평가
이원준,오윤석,이성민,김형태,임대순,김성원,Lee, Won-Jun,Oh, Yoon-Suk,Lee, Sung-Min,Kim, Hyung-Tae,Lim, Dae-Soon,Kim, Seongwon 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.6
Considerable research efforts have been explored attempting to enhance the thermal durability of thermal barrier coatings (TBCs) at the high operating temperatures of gas turbines. In this study, the suspension plasma spray (SPS) process was applied to produce TBCs with a segmented structure by using an yttria-stabilized zirconia (YSZ) suspension. Four different experiment sets were carried out by controlling the ratio between surface roughness of the bond coat and feed stock size ($R_a/D_{50}$) in order to examine the effect of $R_a/D_{50}$ ratio on the microstructure of SPS-prepared coatings. When the $R_a/D_{50}$ had a high value of 11.8, a deposited thick coating turned out to have a cone-type columnar microstructure. In contrast, at the low $R_a/D_{50}$ values of 2.9 and 0.18, a deposited thick coating appeared to have a dense, vertically-cracked microstructure. However, with the very low $R_a/D_{50}$ value of 0.05 the coating was delaminated.