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      • KCI등재

        원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교

        이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2

        Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

      • SCOPUSKCI등재

        SiH<sub>2</sub>Cl<sub>2</sub> 와 O<sub>3</sub>을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성

        이원준,이주현,한창희,김운중,이연승,나사균,Lee Won-Jun,Lee Joo-Hyeon,Han Chang-Hee,Kim Un-Jung,Lee Youn-Seung,Rha Sa-Kyun 한국재료학회 2004 한국재료학회지 Vol.14 No.2

        Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

      • KCI등재

        HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구

        이원준,박미선,장연숙,이원재,하주형,최영준,이혜용,김홍승,Lee, Won-Jun,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Ha, Ju-Hyung,Choi, Young-Jun,Lee, Hae-Yong,Kim, Hong-Seung 한국결정성장학회 2016 韓國結晶成長學會誌 Vol.26 No.3

        본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다. In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

      • KCI등재

        HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

        이원준,박미선,이원재,김일수,최영준,이혜용,Lee, Won Jun,Park, Mi Seon,Lee, Won Jae,Kim, Il Su,Choi, Young Jun,Lee, Hae Yong 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6

        An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

      • SCOPUSKCI등재

        서스펜션 플라즈마 용사법을 이용한 7.5 wt% Y<sub>2</sub>O<sub>3</sub>-ZrO<sub>2</sub> 열차폐코팅 제조 및 평가

        이원준,오윤석,이성민,김형태,임대순,김성원,Lee, Won-Jun,Oh, Yoon-Suk,Lee, Sung-Min,Kim, Hyung-Tae,Lim, Dae-Soon,Kim, Seongwon 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.6

        Considerable research efforts have been explored attempting to enhance the thermal durability of thermal barrier coatings (TBCs) at the high operating temperatures of gas turbines. In this study, the suspension plasma spray (SPS) process was applied to produce TBCs with a segmented structure by using an yttria-stabilized zirconia (YSZ) suspension. Four different experiment sets were carried out by controlling the ratio between surface roughness of the bond coat and feed stock size ($R_a/D_{50}$) in order to examine the effect of $R_a/D_{50}$ ratio on the microstructure of SPS-prepared coatings. When the $R_a/D_{50}$ had a high value of 11.8, a deposited thick coating turned out to have a cone-type columnar microstructure. In contrast, at the low $R_a/D_{50}$ values of 2.9 and 0.18, a deposited thick coating appeared to have a dense, vertically-cracked microstructure. However, with the very low $R_a/D_{50}$ value of 0.05 the coating was delaminated.

      • KCI등재

        Sildenafil Citrate 복용 후 성관계 뒤 발생한 양안 급성폐쇄각녹내장 1예

        이원준,성민철,Won June Lee,MD,Mincheol Seong,MD 대한안과학회 2011 대한안과학회지 Vol.52 No.9

        '스콜라' 이용 시 소속기관이 구독 중이 아닌 경우, 오후 4시부터 익일 오전 7시까지 원문보기가 가능합니다.

        Purpose: The authors of the present study report a case of bilateral simultaneous acute angle closure glaucoma following sildenafil citrate-aided sexual intercourse. Case summary: A 63-year-old man visited the emergency department with sudden onset of bilateral ocular pain and blurred vision. The patient had taken 50 mg sildenafil citrate followed by sexual intercourse. His visual acuity on presentation was 0.3 in the right eye and 0.5 in the left eye. Intraocular pressure (IOP) was 54 mm Hg and 46 mm Hg in the right and left eye, respectively. Anterior chamber depths were shallow and angles were closed on gonioscopy in both eyes. The patient was treated with ocular hypotensive medication and subsequently managed with bilateral YAG laser peripheral iridotomies. During the 13 months of follow-up, there was no recurrent angle closure attack and IOPs were well-controlled. Conclusions: The mechanism of bilateral angle closure glaucoma caused by sildenafil citrate is not proven. Those who are predisposed towards developing angle-closure glaucoma may be at risk when having sexual intercourse aided by sildenafil citrate. J Korean Ophthalmol Soc 2011;52(9):1123-1127

      • KCI등재

        서스펜션 플라즈마 용사를 이용한 이트리아 안정화 지르코니아 (7.5 wt% Y<sub>2</sub>O<sub>3</sub>-ZrO<sub>2</sub>) 코팅 증착 및 특성

        이원준,권창섭,김성원,오윤석,김형태,임대순,Lee, Won-Jun,Kwon, Chang-Sup,Kim, Seongwon,Oh, Yoon-Suk,Kim, Hyung-Tae,Lim, Dae-Soon 한국분말야금학회 2013 한국분말야금학회지 Vol.20 No.6

        Yttria-stabilized zirconia (YSZ) coatings are fabricated via suspension plasma spray (SPS) for thermal barrier applications. Three different suspension sets are prepared by using a planetary mill as well as ball mill in order to examine the effect of starting suspension on the phase evolution and the microstructure of SPS prepared coatings. In the case of planetary-milled commercial YSZ powder, a deposited thick coating turns out to have a dense, vertically-cracked microstructure. In addition, a dense YSZ coating with fully developed phase can be obtained via suspension plasma spray with suspension from planetary-milled mixture of $Y_2O_3$ and $ZrO_2$.

      • KCI등재

        적층 평판형 SOFC에서 LSM 전극의 기공 제어

        이원준,여동훈,신효순,정대용,Lee, Won-Jun,Yeo, Dong-Hun,Shin, Hyo-Soon,Jeong, Dea-Yong 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.12

        In solid oxide fuel cell system, yttria-stabilized zirconia is generally adopted as the electrolyte, which has high strength and superior oxygen ion conductivity, and the air electrode and the fuel electrode are attached to this. Recently, new structure of 'layered planar SOFC module' was suggested to solve the reliability problem due to the high temperature stability of a sealing agent and a binding material. In this study to materialize the air electrode in a layered planar SOFC module, the LSM ink was coated to form homogeneous electrode in the channel after the ink preparation. As the porosity control agent, PMMA or active carbon powder was adopted with use of a commercial dispersant in ethanol. The optimal amounts of both the porosity control agents and the dispersant were determined. Four (4) vol% of the dispersant for the LSM-PMMA case and 15 vol% for LSM-carbon powder showed the lowest viscosities respectively to indicate the best dispersed states of the slurries. With PMMA and carbon powder, sintered LSM ink shows the relatively homogeneous distributions of pores and with increases of the agents, the porosities increased in both cases. From this, it can be thought that the amount of the PMMA or carbon powder could be used to control the porosity of the LSM ink.

      • KCI등재

        협대역 고반사 파장 필터 구현을 위한 폴리머 광도파로 에포다이즈드 격자

        이원준,황광호,신진수,오민철,Lee, Won-Jun,Huang, Guanghao,Shin, Jin-Soo,Oh, Min-Cheol 한국광학회 2015 한국광학회지 Vol.26 No.4

        파장 투과 대역폭이 좁으면서도 반사율이 높은 파장 필터를 구현하기 위해서 격자의 반사율이 진행 방향을 따라 서서히 변하는 구조의 에포다이즈드 격자 구조를 폴리머 광도파로와 함께 제작하였다. 격자로 인한 유효 굴절률 변화가 $5{\times}10^{-4}$인 경우에 대하여 에포다이즈드 격자의 길이에 따른 반사율 변화를 설계하였으며 길이가 15 mm 이상이 되는 경우에 반사율이 99%에 도달함을 확인하였다. 길이가 서로 다른 여러 개의 격자를 제작하여 반사율, 3-dB 대역폭, 20-dB 대역폭을 측정하였으며, 격자 길이가 18 mm인 소자에서 95%의 반사율을 얻을 수 있었고, 이때 3-dB 대역폭은 0.28 nm, 그리고 20-dB 대역폭은 0.70 nm의 특성을 가짐을 확인하였다. Wavelength filters are essential components for selecting a certain wavelength channel of a WDM optical communication system. To realize wavelength filters with narrow bandwidth and high reflectivity, an apodized grating structure with length of 15 mm and index modulation of $5{\times}10^{-4}$ was designed. The device exhibited a reflectivity of 95%, 3-dB bandwidth of 0.28 nm, and 20-dB bandwidth of 0.70 nm on an 18 mm grating length.

      • KCI등재

        주사레이저검안경의 레트로모드를 이용한 낭포황반부종의 영상화

        이원준,조희윤,이병로,Won June Lee,Hee Yoon Cho,Byung-Ro Lee 대한안과학회 2012 대한안과학회지 Vol.53 No.4

        '스콜라' 이용 시 소속기관이 구독 중이 아닌 경우, 오후 4시부터 익일 오전 7시까지 원문보기가 가능합니다.

        Purpose: To investigate the visualization of cystoid macular edema (CME) using noninvasive retromode imaging by a new scanning laser ophthalmoscope (SLO) and compare to previous imaging modalities. Methods: The authors of the present study retrospectively reviewed the medical records of 21 eyes of 20 patients with CME due to various etiologies. All eyes were examined with fundus camera, fluorescein angiography (TRC-50EX, Topcon, Tokyo, Japan), SLO (F-10, Nidek, Gamagori, Japan), and spectral-domain optical coherence tomography (OCT) (3D OCT-1000, Topcon, Tokyo, Japan). In the present study the SLO was used in the retro-mode with an infrared laser. Results: Previous fundus photography could not detect CME adequately although SLO retro-mode could show numerous oval or polygonal cystoid spaces more readily. Furthermore, each individual small cystoid space could be detected and the area of each cystoid space could be measured. The area of the largest cystoid space showed a correlation with its height, as measured with OCT (R = 0.606, p = 0.004). The area of the whole foveal cystoid space showed a correlation with central macular thickness, as measured with OCT (R = 0.493, p = 0.023). Conclusions: A new commercially available SLO (F-10) in the retro-mode can allow us to detect each cystoid space noninvasively and to measure the extent of CME. J Korean Ophthalmol Soc 2012;53(4):536-543

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