원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교

이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

이원준,박미선,이원재,김일수,최영준,이혜용,Lee, Won Jun,Park, Mi Seon,Lee, Won Jae,Kim, Il Su,Choi, Young Jun,Lee, Hae Yong 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

SiH₂Cl₂ 와 O₃을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성

이원준,이주현,한창희,김운중,이연승,나사균,Lee Won-Jun,Lee Joo-Hyeon,Han Chang-Hee,Kim Un-Jung,Lee Youn-Seung,Rha Sa-Kyun 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구

이원준,박미선,장연숙,이원재,하주형,최영준,이혜용,김홍승,Lee, Won-Jun,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Ha, Ju-Hyung,Choi, Young-Jun,Lee, Hae-Yong,Kim, Hong-Seung 한국결정성장학회 2016 한국결정성장학회지 Vol.26 No.3

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다. In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

봄철에 피해가 큰 호흡기 질병 백신 접종 요령

이원준,Lee, Won-Jun 대한양돈협회 1998 養豚 Vol.20 No.4

돼지 일본뇌염 예방은 이렇게

이원준,Lee, Won-Jun 대한양돈협회 1998 養豚 Vol.20 No.5

Caffeic acid, chlorogenic acid, EGCG가 유방암 세포 T-47D의 p16 유전자 DNA methylation에 미치는 영향

이원준,Lee, Won-Jun 한국생명과학회 2007 생명과학회지 Vol.17 No.4

본 연구에서 사용한 coffee에 다량 함유된 caffeic acid와 chlorogenic acid, 녹차에 함유된 EGCG 성분은 암세포의 증식을 억제하는데 중요한 기능을 담당하는 세포주기 조절인자인 p16 유전자의 DNA methylation 패턴을 유방암 T-47D 세포에서 유의하게 변화시켰다. MSP를 이용하여 p16 유전자의 promoter 지역에서의 methylation상태의 변화를 살펴본 결과 caffeic acid, chlorogenic acid, EGCG는 유전자의 hypermethylation을 감소시켰으며, 이로 인해 demethylation된 p16 유전자가 증가하는 경향을 보였다. 이러한 연구 결과는 coffee 폴리페놀인 caffeic acid, chlorogenic acid와 녹차 폴리페놀인 EGCG는 세포내의 DNA methylation을 억제하는 기능을 가지는데, 이는 coffee폴리페놀과 같이 COMT 효소에 의한 methylation 부산물인 SAH의 증가에 의한 DNMT의 억제이거나, EGCG와 같이 DNMT와 직접적으로 결합하여 methylation 반응을 억제하는 mechanism에 의한 것으로 사료된다. 따라서 앞으로 이미 개발된 항암제뿐만 아니라, 부작용과 독성이 적은 식이성분에 대한 연구가 좀 더 심도 있게 이루어 져야 할 것이며, 이러한 연구들은 암이 발생되고 난 후 치료 요법으로 사용됨은 물론, 암이 발생하기 전에 사전 예방법으로도 널리 적용하는데 있어 중요한 이론적 토대를 마련할 것으로 사료된다. In the present investigation, we studied the modulating effects of caffeic acid, chlorogenic acid, and (-)-epigallocatechin-3-gallate(EGCG) on the methylation status of promoter regions of cell cycle regulator, p16, in human breast cancer T-47D cells. We demonstrated that treatment of T-47D cells with caffeic acid, chlorogenic acid, or EGCG partially inhibited the methylation status of the promoter regions of p16 genes determined by methylation-specific PCR. In contrast, unmethylated p16 genes were increased with the treatment of T-47D cells with $20{\mu}M$ of caffeic acid or chlorogenic acid for 6 days. Treatment of T-47D cells with 5, 20 or $50{\mu}M$ of EGCG increased the unmethylation status of p16 gene up to 100%, and the methylation-specific bands of this gene were decreased up to 50% in a concentration-dependent manner. The finding of present study demonstrated that coffee polyphenols and EGCG have strong inhibitory effects of the cellular DNA methylation process through increased formation of S-adenosyl-homocysteine(SAH) during the catechol-O-methyltransferase (COMT)- mediated O-methylation of these dietary chemicals or an direct inhibition of the DNA methyltransferases. In conclusion, various dietary polyphenols could reverse the methylation status of p16 gene in human breast T-47D cells.

세노스피어(Cenosphere)의 입도 분포에 따른 물리적 특성 및 광학적 특성 평가

이원준,황해진,한규성,황광택,조우석,김진호,Lee, Won-Jun,Hwang, Hae-Jin,Han, Kyu-Sung,Hwnag, Kwang-Taek,Cho, Woo-Suk,Kim, Jin-Ho 한국재료학회 2017 한국재료학회지 Vol.27 No.7

Recycled cenosphere, which is a hollow shaped particle from fly ash, has become attractive as a building material due to its light weight and excellent heat insulation and soundproof properties. In this paper, we investigated the effect of cenosphere size on the physical and optical properties. High brightness of cenosphere as raw material is required for a wide range of ceramics applications, particularly in fields of building materials and industrial ceramic tiles. Cenospheres were sorted by particle size; the microstructure was analyzed according to the cenosphere size distribution. Cenospheres were generally composed of quartz, mullite, and amorphous phase. Colour measurement corresponding to chemical composition revealed that the contents of iron oxide and carbon in the cenospheres were the major factors determining the brightness of the cenospheres.

Sildenafil Citrate 복용 후 성관계 뒤 발생한 양안 급성폐쇄각녹내장 1예

이원준,성민철,Won June Lee,MD,Mincheol Seong,MD 대한안과학회 2011 대한안과학회지 Vol.52 No.9

Purpose: The authors of the present study report a case of bilateral simultaneous acute angle closure glaucoma following sildenafil citrate-aided sexual intercourse. Case summary: A 63-year-old man visited the emergency department with sudden onset of bilateral ocular pain and blurred vision. The patient had taken 50 mg sildenafil citrate followed by sexual intercourse. His visual acuity on presentation was 0.3 in the right eye and 0.5 in the left eye. Intraocular pressure (IOP) was 54 mm Hg and 46 mm Hg in the right and left eye, respectively. Anterior chamber depths were shallow and angles were closed on gonioscopy in both eyes. The patient was treated with ocular hypotensive medication and subsequently managed with bilateral YAG laser peripheral iridotomies. During the 13 months of follow-up, there was no recurrent angle closure attack and IOPs were well-controlled. Conclusions: The mechanism of bilateral angle closure glaucoma caused by sildenafil citrate is not proven. Those who are predisposed towards developing angle-closure glaucoma may be at risk when having sexual intercourse aided by sildenafil citrate. J Korean Ophthalmol Soc 2011;52(9):1123-1127

협대역 고반사 파장 필터 구현을 위한 폴리머 광도파로 에포다이즈드 격자

이원준,황광호,신진수,오민철,Lee, Won-Jun,Huang, Guanghao,Shin, Jin-Soo,Oh, Min-Cheol 한국광학회 2015 한국광학회지 Vol.26 No.4

파장 투과 대역폭이 좁으면서도 반사율이 높은 파장 필터를 구현하기 위해서 격자의 반사율이 진행 방향을 따라 서서히 변하는 구조의 에포다이즈드 격자 구조를 폴리머 광도파로와 함께 제작하였다. 격자로 인한 유효 굴절률 변화가 $5{\times}10^{-4}$인 경우에 대하여 에포다이즈드 격자의 길이에 따른 반사율 변화를 설계하였으며 길이가 15 mm 이상이 되는 경우에 반사율이 99%에 도달함을 확인하였다. 길이가 서로 다른 여러 개의 격자를 제작하여 반사율, 3-dB 대역폭, 20-dB 대역폭을 측정하였으며, 격자 길이가 18 mm인 소자에서 95%의 반사율을 얻을 수 있었고, 이때 3-dB 대역폭은 0.28 nm, 그리고 20-dB 대역폭은 0.70 nm의 특성을 가짐을 확인하였다. Wavelength filters are essential components for selecting a certain wavelength channel of a WDM optical communication system. To realize wavelength filters with narrow bandwidth and high reflectivity, an apodized grating structure with length of 15 mm and index modulation of $5{\times}10^{-4}$ was designed. The device exhibited a reflectivity of 95%, 3-dB bandwidth of 0.28 nm, and 20-dB bandwidth of 0.70 nm on an 18 mm grating length.