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Kim, S.M.,Lee, S.Y.,Cho, J.S.,Son, S.M.,Choi, S.S.,Yun, Y.P.,Yoo, H.S.,Yoon, D.Y.,Oh, K.W.,Han, S.B.,Hong, J.T. North-Holland ; Elsevier Science Ltd 2010 european journal of pharmacology Vol.631 No.1
Ginsenoside Rg3 has been a subject of interest for use as a cancer preventive or therapeutic agent. Nuclear factor-kappa (NF-κB) is constitutively activated in prostate cancer, and gives cancer cells resistance to chemotherapeutic agents. To investigate whether Rg3 can suppress the activation of NF-κB, and thus increase susceptibility of prostate (LNCaP and PC-3, DU145) cells against chemotherapeutics, prostate cancer cell growth as well as activation of NF-κB was examined. We found that a combination treatment of Rg3 (50@?M) with a conventional agent docetaxel (5nM) was more effective in the inhibition of prostate cancer cell growth and induction of apoptosis as well as G<SUB>0</SUB>/G<SUB>1</SUB> arrest accompanied with the significant inhibition of NF-κB activity than those by treatment of Rg3 or docetaxel alone. It was also found that NF-κB target gene expression of Bax, caspase-3, and caspase-9 was much more significantly enhanced, but the expression of Bcl-2, inhibitor of apoptosis protein (IAP-1) and X chromosome IAP (XIAP), and the expression of cell cycle regulatory proteins cyclin B, D1 and E, and cyclin dependent kinases 2 and 4 was also much more significantly inhibited by the combination treatment. The combination of Rg3 (50@?M) with cisplatin (10@?M) and doxorubicin (2@?M) was also more effective in the inhibition of prostate cancer cell growth and NF-κB activity than those by the treatment of Rg3 or chemotherapeutics alone. These results indicate that ginsenoside Rg3 inhibits NF-κB, and enhances the susceptibility of prostate cancer cells to docetaxel and other chemotherapeutics. Thus, ginsenoside Rg3 could be useful as an anti-cancer agent.
High performance and the low voltage operating InGaZnO thin film transistor
Son, D.h.,Kim, D.H.,Sung, S.J.,Jung, E.A.,Kang, J.K. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.4
In this study, we compare the electrical properties of inverted-coplanar-type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO<SUB>2</SUB> gate dielectric or a hafnium oxide (HfO<SUB>2</SUB>) gate dielectric. The fabricated HfO<SUB>2</SUB>/IGZO TFTs have higher field-effect mobility than the SiO<SUB>2</SUB>/IGZO TFTs. The HfO<SUB>2</SUB>/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>, a low sub-threshold swing of 90 mV dec<SUP>-1</SUP>, and a threshold voltage of 0.67 V, respectively.
The kinematics of the Seyfert 2 galaxy NGC 5728 circumnuclear region
Son, D.-H.,Hyung, S.,Ferruit, P.,Pé,contal, E.,Lee, W.-B. Blackwell Publishing Ltd 2009 MONTHLY NOTICES- ROYAL ASTRONOMICAL SOCIETY Vol.395 No.2
<P>ABSTRACT</P><P>We secured spectral images of the circumnuclear, 12 × 10 arcsec<SUP>2</SUP> region of the Seyfert 2 galaxy NGC 5728 with the Optically Adaptive System for Imaging Spectroscopy at the Canada–France–Hawaii Telescope 3.6-m telescope. The radial velocity distribution of the two bright zones, main central (C) core and north-west (NW) core, and strategically important points along the position angles, PA 33°, 90°, 123° and 143°, are analysed. The large-scale reconstructed monochromatic images of the Hα, Hβ, [O <SMALL>III</SMALL>] and [N <SMALL>II</SMALL>] lines show a bipolar morphology along PA ∼ 123°. The prominent elliptical ring is seen in the Hα and Hβ monochromatic images. Our analysis implies that this ring is rotating in the same clockwise direction as that of the galactic disc; this elliptical ring is in fact a projected result of a circular ring of radius ∼5.4 arcsec, with <I>i</I>∼ 50° (nearly aligned with the host galactic plane).</P><P>We used the [O <SMALL>III</SMALL>]5007 line profiles for a detailed analysis of kinematics in the circumnuclear region of the NGC 5728. The [O <SMALL>III</SMALL>]5007 line profiles reveal distinct kinematical structures. (1) The strongest component of Doppler peaks: two core components, consisting of the receding main C-core and the approaching NW-core with the radial velocities, <I>V</I><SUB>r</SUB>≃+250 and −240 (or −250) km s<SUP>−1</SUP>, respectively. These two cores consist of a roughly spherically symmetric distribution of the gas with radii of <I>r</I>∼ 1.0 arcsec (at <I>V</I><SUB>r</SUB>≃+240 km s<SUP>−1</SUP>) and 0.9 arcsec (at <I>V</I><SUB>r</SUB>≃−240 km s<SUP>−1</SUP>), respectively. Hints of the presence of inflows around these cores are observed. (2) The next strong line profile component: this component corresponds to the bipolar cone aligned PA ∼ 123°. (3) The reverse S-shaped kinematical boundary which runs through the double-peaked zone of 6–7 arcsec long in the galactic major axis direction is likely to be caused by a combination of the disc rotation of the host galaxy and the revolution of the two central cores.</P>
Son, S.W.,Park, J.H.,Baek, J.M.,Kim, J.S.,Kim, D.K.,Shin, S.H.,Banerjee, S.K.,Lee, J.H.,Kim, T.W.,Kim, D.H. Pergamon Press ; Elsevier Science Ltd 2016 Solid-State Electronics Vol.123 No.-
In this paper, we have fabricated and characterized In<SUB>0.7</SUB>Ga<SUB>0.3</SUB>As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> (0.6/2nm) bi-layer stack by ALD. The fabricated device with L<SUB>g</SUB>=4μm exhibits a record maximum transconductance (g<SUB>m_max</SUB>) in excess of 520μS/μm at >1μm region, and reasonably good electrostatic integrity, such as SS=110mV/decade and DIBL=43mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS=100-110mV/decade, V<SUB>T</SUB>=-0.25V to -0.2V and DIBL=40-50mV/V, as L<SUB>g</SUB> decreases from 10μm to 4μm. Furthermore, we have explored the impact of source resistance (R<SUB>S</SUB>) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (g<SUB>m_ext</SUB>) and intrinsic transconductance (g<SUB>m_int</SUB>) as a function of L<SUB>g</SUB>.
Retinoic Acid 의 농도와 돼지 갑상선 세포의 기능에 관한 In vitro 연구
손용석,이성호,김기동,고광석 한국동물자원과학회 2000 한국축산학회지 Vol.42 No.2
The effect of retinoic acid (RA) on iodide metabolism in the thyroid was studied in an in vitro culture model. Porcine thyroid follicular cells were incubated with Coon's modified Ham's F-12 medium with or without RA (10^(-8)-10^(-5)M) for 48 hours, and cell proliferation, iodide uptake, iodide organification and intracellular cAMP concentration were determined. RA did not influence the proliferation of thyroid cells. However, marked inhibition of the iodide uptake was observed when incubated with 10^(-8), 10^(-7), 10^(-6) and 10^(-5) M RA as compared with control (p $lt; 0.05). Iodide organification reflecting thyroid hormone synthesis was also inhibited by addition of RA (p $lt; 0.05). Pretreatment of thyroid cells with RA caused a significant inhibition of TSH-stimulated cAMP accumulation (p $lt; 0.05) in the cells. The results obtained indicated that RA inhibited iodine metabolism by reducing TSH-stimulated cAMP response and also by acting on the metabolism steps subsequent to cAMP production in thyroid cells.
정전기력 방식의 Drop-on Demand 토출을 위한 MEMS 잉크젯헤드 제작
孫尙郁(S. U. Son),金永珉(Y. M. Kim),崔在鎔(J. Y. Choi),李錫漢(S. H. Lee),高漢瑞(H. S. Ko),金容載(Y. J. Kim),邊渡泳(D. Y. Byun) 대한전기학회 2007 전기학회논문지 Vol.56 No.8
This paper presents a novel electrostatic drop-an-demand ejector with a conductive pole inside nozzle. The MEMS fabricated pole-type nozzle shows a significant improvement in the performance and reliability of forming meniscus and generating a micro dripping mode of droplet out of the meniscus. It is verified experimentally that the use of the pole-type nozzle. The liquid is used D2O+SDS+SWNT (5 %wt). The gap between upper electrode and nozzle is about 600 ㎛. Electrostatic drop-on-demand ejection is observed when a DC voltage of 1.5 ㎸ is applied between the control electrode and ground electrode. Droplet diameter is 100 ㎛.
Nam, S. M.,Kim, Y. N.,Kim, J. W.,Kyeong, D. S.,Lee, S. H.,Son, Y.,Shin, J. H.,Kim, J.,Yi, S. S.,Yoon, Y. S. Springer Science + Business Media 2016 Cellular and molecular neurobiology Vol.36 No.1
<P>Hes6 is a member of the hairy-enhancer of split homolog (Hes) family of transcription factors and interacts with other Hes family genes. During development, Hes genes are expressed in neural stem cells and progenitor cells. However, the role of Hes6 in adult hippocampal neurogenesis remains unclear. We therefore investigated the effects of Hes6 on adult hippocampal neurogenesis, by comparing Hes6 knockout and wild-type mice. To this end, we immunostained for markers of neural stem cells and progenitor cells (nestin), proliferating cells (Ki67), post-mitotic neuroblasts and immature neurons (doublecortin, DCX), mature neuronal cells (NeuN), and astrocyte (S100 beta). We also injected 5-bromo-2'-deoxyuridine (BrdU) to trace the fate of mitotic cells. Nestin- and Ki67-positive proliferating cells did now show any significant differences between wild and knockout groups. Hes6 knockout negatively affects neuroblast differentiation based on DCX immunohistochemistry. On the contrary, the ratio of the BrdU and NeuN double-positive cells did not show any significance, even though it was slightly higher in the knockout group. These results suggest that Hes6 is involved in the regulation of neuroblast differentiation during adult neurogenesis, but does not influence integration into mature neurons.</P>