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HVPE 법을 활용한 GaN 성장 시 질화처리에 관한 연구
이승훈,이주형,이희애,오누리,이성철,강효상,이성국,양재득,박재화,Lee, Seung Hoon,Lee, Joo Hyung,Lee, Hee Ae,Oh, Nuri,Yi, Sung Chul,Kang, Hyo Sang,Lee, Seong Kuk,Yang, Jae Duk,Park, Jae Hwa 한국결정성장학회 2019 한국결정성장학회지 Vol.29 No.4
HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE. HVPE는 GaN 단결정의 제조 방법 중 하나로 빠른 성장 속도가 장점인 상업적으로 널리 사용되는 성장 방법이다. HVPE 법에 의한 GaN 단결정 성장은 여러 공정으로 이루어지며, 특히 GaN 성장 전 기판의 질화 처리는 성장되는 GaN 단결정 품질에 상당한 영향을 미친다. 본 연구에서는 사파이어 기판 위에 GaN 단결정 성장 시 기판의 질화처리가 성장되는 GaN 단결정 품질에 미치는 영향을 알아보고자 하였다. 질화 처리를 제외한 다른 성장 조건은 동일하게 하였고 질화처리 시 기판에 공급되는 가스 유량을 다양하게 변화시킨 후 GaN 박막을 성장시키고, 성장된 GaN의 표면 특성평가를 통하여, HVPE 법에서의 질화처리 효과를 고찰하여 보고자 하였다.
TadGAN 기반 시계열 이상 탐지를 활용한 전처리 프로세스 연구
이승훈,김용수,Lee, Seung Hoon,Kim, Yong Soo 한국품질경영학회 2022 품질경영학회지 Vol.50 No.3
Purpose: The purpose of this study was to increase prediction accuracy for an anomaly interval identified using an artificial intelligence-based time series anomaly detection technique by establishing a pre-processing process. Methods: Significant variables were extracted by applying feature selection techniques, and anomalies were derived using the TadGAN time series anomaly detection algorithm. After applying machine learning and deep learning methodologies using normal section data (excluding anomaly sections), the explanatory power of the anomaly sections was demonstrated through performance comparison. Results: The results of the machine learning methodology, the performance was the best when SHAP and TadGAN were applied, and the results in the deep learning, the performance was excellent when Chi-square Test and TadGAN were applied. Comparing each performance with the papers applied with a Conventional methodology using the same data, it can be seen that the performance of the MLR was significantly improved to 15%, Random Forest to 24%, XGBoost to 30%, Lasso Regression to 73%, LSTM to 17% and GRU to 19%. Conclusion: Based on the proposed process, when detecting unsupervised learning anomalies of data that are not actually labeled in various fields such as cyber security, financial sector, behavior pattern field, SNS. It is expected to prove the accuracy and explanation of the anomaly detection section and improve the performance of the model.
이승훈,윤종설,차영철,이준,황해진,문지웅,Lee, Seung-Hun,Yoon, Song-Seol,Cha, Young-Chul,Lee, Jun,Hwang, Hae-Jin,Moon, Ji-Woong 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.12
The potential candidates for IT-SOFCs cathode materials, $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ (BSCF) and $La_{0.6}Ba_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LBCF) powders, were synthesized by a EDTA-citrate combined method from $Sr(NO_3)_2$, $Ba(NO_3)_2$, $La(NO_3)_3{\cdot}6H_2O$, $Co(NO_3)_2{\cdot}6H_2O$, $Fe(NO_3)_3{\cdot}9H_2O$, citric acid and $EDTA-NH_3$. The cathode performance of symmetrical electrochemical cells consisting of BSCF-GDC or LBCF-GDC composite electrodes and a GDC electrolyte was investigated using by AC impedance spectroscopy at the temperature range of 500 to $700^{\circ}C$. It was found that a single phase perovskite could be successfully synthesized when the precursor is heated at $850^{\circ}C$ for 2 h. Due to thermal expansion mismatch between BSCF and GDC, the composite cathodes with lower GDC content than 45 wt% were peeled off from the GDC electrolyte and their electrode polarization resistance was estimated to be high. The thermal expansion coefficient of BSCF-GDC composites was decreased with increasing the GDC content and the electrode peeling off did not occur in BSCF-45 and 55 wt% GDC composites. BSCF-45 wt% GDC composite electrode showed the lowest area specific resistances (ASR) of 0.15 and $0.04{\Omega}{\cdot}cm^2$ at 600 and $700^{\circ}C$, respectively. On the other hand, LBCF-GDC composite cathodes showed higher ASR than the BSCF-45 and 55 wt% GDC and their cathode performance were decreased with the GDC content.
가소제 함유 PVDF 나노섬유의 상용화 가능성에 관한 연구
이승훈,소윤미,장선호,심현주,김찬,Lee, Seung-Hoon,So, Yun-Mi,Jang, Seon-Ho,Shim, Hyun-Joo,Kim, Chan 한국섬유공학회 2017 한국섬유공학회지 Vol.54 No.4
The mechanical properties and softness of electrospun polyvinylidene fluoride (PVDF) nanofibers was improved by the addition of a small amount of tributyl citrate (TBC) plasticizer to PVDF spinning solutions. The PVDF nanofibers containing TBC were prepared by electrospinning and subsequent calendering. The morphology, mechanical properties, and thermal properties of the electrospun PVDF nanofibers were investigated using Field Emission Scanning Electron Microscopy (FE-SEM), tensile test and DSC analysis. The results of the tensile experiment indicate that the PVDF nanofibers containing 5 wt% of TBC have three times better strength and six times higher elongation in the mechanical direction (MD) compared to those of pure PVDF nanofibers. Thus, the results indicate that PVDF nanofibers containing TBC have potential applications not only in the textile industry but also in the electrical and biomedical fields. Further, the excellent mechanical properties and softness of the eco-friendly nanofibers containing TBC plasticizer is useful for its commercialization.
실리콘 이종접합 태양전지 특성에 대한 Zn 도핑된 ITO 박막의 일함수 효과
이승훈,탁성주,최수영,김찬석,김원목,김동환,Lee, Seung-Hun,Tark, Sung-Ju,Choi, Su-Young,Kim, Chan-Seok,Kim, Won-Mok,Kim, Dong-Hhwan 한국재료학회 2011 한국재료학회지 Vol.21 No.9
Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.
저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과
이승훈,이주형,오누리,이성철,박형빈,신란희,박재화,Lee, Seung Hoon,Lee, Joo Hyung,Oh, Nuri,Yi, Sung Chul,Park, Hyung Bin,Shin, Ran Hee,Park, Jae Hwa 한국결정성장학회 2022 한국결정성장학회지 Vol.32 No.3
이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.
CMOS 이미지 센서용 NMOS-Diode eFuse OTP 설계
이승훈,하판봉,김영희,Lee, Seung-Hoon,Ha, Pan-Bong,Kim, Young-Hee 한국정보통신학회 2016 한국정보통신학회논문지 Vol.20 No.2
본 논문에서는 프로그램 선택 소자는 채널 폭이 큰 NMOS (N-channel MOSFET) 트랜지스터 대신 DNW (Deep N-Well) 안에 형성된 채널 폭이 작은 isolated NMOS 트랜지스터의 body인 PW (P-Well)과 source 노드인 n+ diffusion 영역 사이에 형성된 기생하는 접합 다이오드를 사용하는 NMOS-Diode eFuse OTP (One-Time Programmable) 셀을 제안하였다. 제안된 eFuse OTP 셀은 프로그램 모드에서 NMOS 트랜지스터에 형성되는 기생하는 접합 다이오드를 이용하여 eFuse를 blowing 시킨다. 그리고 읽기 모드에서는 접합 다이오드를 이용하는 것이 아니고 NMOS 트랜지스터를 이용하기 때문에 다이오드의 contact voltage 강하를 제거할 수 있으므로 '0' 데이터에 대한 센싱불량을 제거할 수 있다. 또한 읽기 모드에서 채널 폭이 작은 NMOS 트랜지스터를 이용하여 BL에 전압을 전달하므로 OTP 셀의 blowing되지 않은 eFuse를, 통해 흐르는 읽기 전류를 $100{\mu}A$ 이내로 억제하여 blowing되지 않은 eFuse가 blowing되는 문제를 해결할 수 있다. In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.
이승훈,정광화,김중곤,곽정훈,한덕우,Lee, Seung-Hun,Jeong, Kwang-Hwa,Kim, Jung-Gon,Khan, Modabber ahmerd,Kwag, Jung-Hun,Han, Deug-Woo 한국축산환경학회 2014 한국축산시설환경학회지 Vol.20 No.4
Liquid fertilization of pig manure slurry is very useful treatment method to recycle organic waste matter as a valuable fertilizer. The solids precipitate and accumulated at the bottom of liquid fertilization tank. The content of nitrogen and phosphate are higher in sediment than pig manure slurry. The pH of sediment was 7.53. S-COD/T-COD ratio of pig manure slurry and sediment were 0.477, 0.29, respectively. The moisture content of sediment of pig manure slurry and sediment were 80.45~83.82%, 97%, respectively. The content of organic matter of sediment was 8.79~10.56%. The content of nitrogen and phosphate of sediment and pig manure slurry were 9,000~11,100 mg/L, 9,100~11,100 mg/L, respectively. The particle size of pig manure slurry was distributed from 2 mm to 0.125 mm. On the other hand. the particle size of sediment was under 0.125 mm.