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실리콘 이종접합 태양전지의 Zn 확산방지층에 의한 TCO/a-Si:H 층간의 계면특성 변화
탁성주,손창식,김동환,Tark, Sung-Ju,Son, Chang-Sik,Kim, Dong-Hwan 한국재료학회 2011 한국재료학회지 Vol.21 No.6
In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.
다단계 습식 식각을 통한 수소처리된 Al-doped ZnO 박막의 특성
탁성주,강민구,박성은,김용현,김원목,김동환,Tark, Sung-Ju,Kang, Min-Gu,Park, Sun-Geun,Kim, Yong-Hyun,Kim, Won-Mok,Kim, Dong-Hwan 한국재료학회 2009 한국재료학회지 Vol.19 No.5
In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.
탁성주,Min Gu Kang,Sungeun Park,Seung Hun Lee,손창식,이정철,김동환 한국물리학회 2011 Current Applied Physics Vol.11 No.3
In this study, we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by RF magnetron sputtering. After their deposition, the surface of the HAZO films was multi-step textured in dilute HCl (0.5%)to investigate the change in their optical properties and surface morphology due to etching. The HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 50.81%. The microcrystalline silicon (μc-Si:H)-based p―i―n solar cells prepared using these new textureetched HAZO substrates showed high quantum efficiencies in the long wavelength range, thereby demonstrating effective light trapping. Using the optimum AZO:H thin film textured surface, we achieved a p―i―n μc-Si solar cell efficiency of 7.08%.
탁성주,강민구,김동환,Tark, Sung-Ju,Kang, Min-Gu,Kim, Dong-Hwan 한국재료학회 2006 한국재료학회지 Vol.16 No.7
Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.
Effect of Growth Temperature on the Properties of Hydrogenated Al-Doped ZnO Films
탁성주,강민구,임희진,김동환,이훈성 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
This study examined the eect of deposition temperature on the electrical and the optical properties of thin-lm hydrogenated zinc oxide doped with aluminum (AZO:H) fabricated by radio frequency magnetron sputering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO:H lms were prepared on glas over a substrate temperature range from room temperature to 250 C. The intentional incorporation of hydrogen was shown to play an important role in the electrical properties of the AZO:H lms by increasing the fre carier concentration. The addition of 2 % H2 in Ar at a growth temperature of 150 C produced an AZO:H lm with excelent electrical properties and a resistivity of 3.21×10-4Ωcm. TheUV-measurementsshowedthatthe optical transmision of the AZO:H lms was above 86 % in the visible range with a wide optical band gap.
기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화
탁성주,강민구,이승훈,김원목,임희진,김동환,Tark, Sung-Ju,Kang, Min-Gu,Lee, Seung-Hoon,Kim, Won-Mok,Lim, Hee-Jin,Kim, Dong-Hwan 한국재료학회 2007 한국재료학회지 Vol.17 No.12
This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{\circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{\circ}C$, resistivity of $3.21{\times}10^{-4}{\Omega}{\cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{\times}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.
Development of surface-textured hydrogenated ZnO:Al thin-films for μc-Si solar cells
탁성주,Min Gu Kang,Sungeun Park,Ji Hoon Jang,이정철,김원목,Joon Sung Lee,김동환 한국물리학회 2009 Current Applied Physics Vol.9 No.6
This study addresses the optimization of rf magnetron-sputtered hydrogenated ZnO:Al (HAZO) films as front contacts in microcrystalline silicon solar cells. The front contact of a solar cell has to be highly conductive and highly transparent to visible and infrared radiation. Furthermore, it has to scatter the incident light efficiently in order for the light to be effectively trapped in the underlying silicon layers. In this research, HAZO films were rf-magnetron-sputtered on glass substrates from a ceramic (98 wt% ZnO, 2 wt% Al2O3) target. Various compositions of AZO films on glass substrates were prepared by changing the H2/(Ar + H2) ratio of the sputtering gas. The resulting smooth films exhibited high transparencies (T≽85% for visible light including all reflection losses) and excellent electrical properties (q = 2.7 × 10-4 Ω . cm). Depending on their structural properties, these films developed different surface textures upon post-deposition etching using diluted hydrochloric acid. The light-scattering properties of these films could be controlled simply by varying the etching time. Moreover, the electrical properties of the films were not affected by the etching process. Therefore, within certain limits, it is possible to optimize the electro-optical and light-scattering properties separately. The microcrystalline silicon (μc-Si:H)- based p–i–n solar cells prepared using these new texture-etched AZO:H substrates showed high quantum efficiencies in the long wavelength range, thereby demonstrating effective light trapping. Using the optimum AZO:H thin-film textured surface, we achieved a p–i–n μc-Si solar cell efficiency of 7.78%.