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김원목,김진수,박종극,백영준,정증현,성태연 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.9
Thickness dependent properties of amorphous Sn-doped In<SUB>2</SUB>O<SUB>3</SUB> (ITO) and polycrystalline Ga-doped ZnO (GZO) films grown on polyethylen terephthalate (PET) with polymeric hard coating were compared with those deposited on Corning glass. The film thickness varied from 20 to 1310 nm. Electrical properties ITO films on PET were almost similar to those on glass. On the other hand, GZO films showed slightly poorer electrical properties when deposited on PET, but the difference was marginal. The electrical properties of amorphous ITO films were independent of film thickness, but polycrystalline GZO films exhibited monotonically improving behavior with increasing thickness mainly due to enhanced crystallinity and increased grain size with increasing film thickness. Although the air-referenced transmittance spectra of films on PET were about 2 - 3% lower than those on glass due to lower transmittance of PET, the substrate-referenced optical transmittance of films on PET were higher than those on glass, reflecting somewhat coarse structure of films on PET. It was shown that both ITO and GZO films on PET with polymeric hard coating could yield comparable properties to those on glass substrate.
In-line 마그네트론 스퍼터 장치를 사용하여 산소 분위기에서 제작한 Ag 박막의 특성
구대영,김원목,조상무,황만수,이인규,정병기,이택성,이경석,조성훈,Ku, Dae-Young,Kim, Won-Mok,Cho, Sang-Moo,Hwang, Man-Soo,Lee, In-Kyu,Cheong, Byung-Ki,Lee, Taek-Sung,Lee, Kyeong-Seok,Cho, Sung-Hun 한국재료학회 2002 한국재료학회지 Vol.12 No.8
A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.
GaAs 나노입자 크기에 따른 SiO<sub>2</sub> 혼합박막의 구조적 광학적 특성
이성훈,김원목,신동욱,조성훈,정병기,이택성,이경석,Lee, Seong-Hun,Kim, Won-Mok,Sin, Dong-Uk,Jo, Seong-Hun,Jeong, Byeong-Gi,Lee, Taek-Seong,Lee, Gyeong-Seok 한국재료학회 2002 한국재료학회지 Vol.12 No.4
For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.