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      • KCI우수등재

        계단형 텅스텐 결정면의 질소 흡착에 관한 연구 : Ⅱ. W(210) 및 W(310)면

        최대선(D. S. Choi),한종훈(J. H. Han),백선목(S. M. Paik),박노길(N. G. Park),김욕욱(Y. W. Kim),황정남(C. N. Whang) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.4

        장전자 방출법으로 텡스텐 (210)면 및 (310)면(100)면의 질소 흡착에 의한 일함수의 변화에 heat of desorption을 측정하였으며 Thermal Desortion Spectra(TDS) 결과로부터 adsorption site를 예측하였다. 텅스텐 (210)면 및 (310)면에 에 질소가 흡착될 때 흡착율에 따라 일함수는 증가하다가 각 면에 대하여 흡착율 5 Langmuir일때 최대 변화량 0.29 eV및 0.20 eV에서 포화되었다. TDS 결과는 이 면들은 낮은 dose의 영역에서 각각 3개의 흡착 site가 있음을 보였으며 이 흡착 site들 중 α₁state의 spectrum의 강도는 (210)면에서 보다 (310)면에서 상대적으로 강해짐을 보였다. 또한 (210)와 (310)면의 α₁ 과 β₂ state의 흡착 site에 흡착된 질소의 dipole moment의 방향은 이 흡착 site들에 대응되는 (100)면의 α₁ 과 β₂state의 흡착 site에 흡착된 질소의 dipole moment의 방향과 반대 방향으로 측정되었으며 이 현상으로부터 질소의 상대적인 흡착 위치를 예측하였다. The heat of desorption and the work function change induced by nitrogen adsorption on the stepped tungstein surface planes, W(210) and W(310), are measured using the Field Electron Emission Microscope(FEM). The adsoption sites are predicted from the Thermal Desortion Spectra(TDS). The work function change of both W(210) and W(310) planes increase as increasing the nitrogen dose and saturates at the nitrogen dose about 5 Langmuir to 0.29 eV and 0.20 ev respectively. We find three adsorption site on each plane for the low dose range. The TDS result shows that the intensity of α₁, state on W(310) is much stronger than that of α₁ state on W(210), and the direction of nitrogen dipole moment adsorbed on the sites correspond to α₁, and β₂ states on W(210) and W(310) planes are in the opposite direction to that of the equivalent states on W(100) plane. From this observation we can predict the relative atomic position in the zdirection (perpendicular direction to the surface) of nitrogen molecules/atoms adsorbed on these sites.

      • KCI등재

        LIGA-like 공정을 이용한 마이크로 부품 복제용 Ni과 Ni-W 금형 제조 및 특성

        황완식,박준식,강영철,조진우,박순섭,이인규,강성군,Hwang, W.S.,Park, J.S.,Kang, Y.C.,Cho, J.W.,Park, S.S.,Lee, I.G.,Kang, S.G. 한국재료학회 2003 한국재료학회지 Vol.13 No.1

        Electroplated Ni and Ni-W micro-molds using LIGA-like process for replication of micro-components such as microfluidic parts and micro optical parts have been investigated. In general, it is hard to produce micro-parts using conventional mechanical processes. Micro-mold formed by LIGA-like process could fabricate micro-parts with high aspect ratio. In this paper, fabrication and properties of electroplated Ni molds with varying applied current types as well as those of Ni-W molds were investigated. Ni molds fabricated under pulse-reverse current showed the highest hardness value of about 160 Hv. Ni-W molds showed the hardness of about 500 Hv which was much harder than that of Ni electroplated molds. The above results suggested that high quality micro-molds could be fabricated by using Ni electroplating of pulse-reverse type for core molds and sequential Ni-W alloys coating.

      • SCISCIESCOPUS

        Magnetic Properties of <tex> $ [\hbox{Ni}_{97{\rm at.}\%}$</tex>-W<tex> $_{3{\rm at.}\%}]_{{100}-{x}}$</tex>-Cu<tex> $_x$</tex> Textured Substrates for Coated Conductors

        Song, K.J.,Ko, R.K.,Kim, H.S.,Ha, H.S.,Ha, D.W.,Oh, S.S.,Park, C.,Yoo, S.-I.,Kim, M.W.,Kim, C.J.,Joo, J.H. Institute of Electrical and Electronics Engineers 2007 IEEE transactions on applied superconductivity Vol.17 No.2

        <P>The degree of ferromagnetism of Ni-W<SUB>y</SUB> alloys decreases as W-content y increases. Both the saturation magnetization <I>M</I> <SUB>sat</SUB> and Curie temperature <I>T</I> <SUB>c</SUB> decrease linearly with W-content y, and both <I>M</I> <SUB>sat</SUB> and <I>T</I> <SUB>c</SUB> go to zero at critical concentration of y<SUB>c</SUB> ~9.50 at.% W. To compare with Ni-W alloys, the magnetic properties of a series of both as-rolled (non-textured) and annealed (biaxially textured) [Ni<SUB>97at.%</SUB>-W<SUB>3at.%</SUB>]<SUB>100-x</SUB>-Cu<SUB>x</SUB> alloy tapes with compositions x = 0, 1, 3, 5, and 7 at.%, were studied. Characterization methods included XRD analyses to investigate the biaxial texturing of the annealed [Ni-W]-Cu alloy tapes and studies of the magnetization for both as-rolled and annealed [Ni-W]-Cu alloy tapes. Both the isothermal mass magnetizations <I>M</I>(<I>H</I>) of a series of samples at different fixed temperatures and <I>M</I>(<I>T</I>) in fixed field, were measured. The effect of Cu addition on both the saturation magnetization and Curie temperature T<SUB>c</SUB> of the Ni<SUB>97at.%</SUB>-W<SUB>3at.%</SUB> alloy was investigated.</P>

      • KCI우수등재

        확산펌프 기반의 BCl<SUB>3</SUB> 축전결합 플라즈마를 이용한 GaAs와 AlGaAs의 건식 식각

        이성현,박주홍,노호섭,최경훈,송한정,조관식,이제원,Lee, S.H.,Park, J.H.,Noh, H.S.,Choi, K.H.,Song, H.J.,Cho, G.S.,Lee, J.W. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4

        본 논문은 확산펌프 기반의 축전 결합형 $BCl_3$ 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 $50{\sim}180$ mTorr, CCP 파워는 $50{\sim}200\;W$, $BCl_3$ 가스 유량은 $2.5{\sim}10$ sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 $BCl_3$ 가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 $0.25{\mu}m$/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 $100{\sim}200\;W$의 조건에서는 $0.3{\mu}m$/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 $BCl_3$ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 $100{\sim}200\;W$ 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75mTorr, 100 W의 CCP 파워 조건에서 $BCl_3$의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, $BCl_3$의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 $BCl_3$ 축전 결합 플라즈마는 주로 $500{\sim}700\;mm$ 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 $BCl_3$ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 $BCl_3$유량을 사용하였을 때 언더컷팅이 더 심했다. We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

      • Herbicidal efficacy of Streptomyces formicae strain W-200 for the biocontrol of invasive weeds

        B. B. Aung,K. M. Cho,J. S. Choi,K. W. Park 한국잡초학회 2021 한국잡초학회 별책(학술대회 초록집) Vol.41 No.1

        Chemical herbicides are primarily used to control of invasive weeds. However, chemical herbicides pose to environmental problems, can persist in soil, and are related to weed resistance. Furthermore, invasive weeds are generally managed physical control such as cutting in Korea. There is a limit to physical control because the invasive weeds are highly regenerative. Secondary metabolites produced by microorganisms cause phytotoxic symptoms such as necrosis, chlorosis, deformation, and stunting on the plant. Therefore, this study aimed to investigate the herbicidal activity of Streptomyces formicae strain W-200 culture filtrate against the growth stages of three invasive weeds: Sicyos angulatus, Ambrosia trifida, and Ambrosia artemisiifolia. In case of soil application for the seed growth, culture filtrate of S. formicae stain W-200 were observed against S. angulatus, A. trifida, and A. artemisiifolia. Form the results, it can be seen that the higher concentrations the greater inhibition. The highest seed growth inhibition was found on A. artemisiifolia at 75% and 100% culture filtrate concentrations. S. angulatus did not showed highly differences compared to untreated control by percentage of seed germination. However, though some seeds still germinated at low concentrations, the roots and shoots were substantially shorter than untreated control plant. In the foliage application on the different growth stages, the highest herbicidal activity (85-100%) was observed at 2-3 leaf stages of treated weeds. The control efficacy of S. formicae strain W-200 declined as growth stages of plants increased. In the middle and late leaf stages, the control efficacy of Streptomyces was lower than 85% and 50% in all concentrations. In addition, the greenhouse trials showed that A. artemisiifolia has higher susceptibility to culture filtrate of S. formicae strain W-200 than S. angulatus and A. trifida in all concentrations at different leaf stages. As the results of herbicidal activity in foliage application, the results were showing the culture filtrate of S. formiace strain W-200 has potential as a bio-herbicidal agent against the A. artemisiifolia especially in early leaf stage of plant growth.

      • <i>CYP2A6</i> and <i>ERCC1</i> polymorphisms correlate with efficacy of S-1 plus cisplatin in metastatic gastric cancer patients

        Park, S R,Kong, S-Y,Nam, B-H,Choi, I J,Kim, C G,Lee, J Y,Cho, S J,Kim, Y W,Ryu, K W,Lee, J H,Rhee, J,Park, Y-I,Kim, N K Nature Publishing Group 2011 The British journal of cancer Vol.104 No.7

        <P><B>Background:</B></P><P>We evaluated the association between polymorphisms of cytochrome P450 2A6 (<I>CYP2A6</I>)/excision repair cross-complementation group 1 (<I>ERCC1</I>)/X-ray repair cross-complementing group 1(<I>XRCC1</I>) and treatment outcomes of metastatic gastric cancer (MGC) patients treated with S-1/cisplatin.</P><P><B>Methods:</B></P><P>Among MGC patients (<I>n</I>=108), who received S-1 (40 mg m<SUP>−2</SUP> b.i.d., days 1–14) and cisplatin (60 mg m<SUP>−2</SUP>, day 1) every 3 weeks, we analysed the wild-type allele (<I>W</I>) and variants (<I>V</I>) of <I>CYP2A6</I> (<I>*4</I>, <I>*7, *9, *10</I>), and the polymorphisms of <I>ERCC1</I> (rs11615, rs3212986) and <I>XRCC1</I> (rs25487).</P><P><B>Results:</B></P><P>Patients having fewer <I>CYP2A6</I> variants had better response rates (<I>W</I>/<I>W vs W</I>/<I>V</I> other than <I>*1/*4 vs V</I>/<I>V</I> or <I>*1/*4</I>=66.7 <I>vs</I> 58.3 <I>vs</I> 32.3% <I>P</I>=0.008), time to progression (TTP) (7.2 <I>vs</I> 6.1 <I>vs</I> 3.5 months, <I>P</I>=0.021), and overall survival (23.2 <I>vs</I> 15.4 <I>vs</I> 12.0 months, <I>P</I>=0.004). <I>ERCC1 19442C</I>><I>A</I> (rs3212986) was also associated with response rate (<I>C/C</I>, 46.7% <I>vs C/A</I>, 55.3% <I>vs A/A</I>, 87.5%) (<I>P</I>=0.048) and TTP (4.4 <I>vs</I> 7.6 <I>vs</I> 7.9 months) (<I>P</I>=0.012). Patients carrying both risk genotypes of <I>CYP2A6</I> (<I>V</I>/<I>V</I> or <I>1/*4</I>) and <I>ERCC1 19442C</I>><I>A</I> (<I>C/C</I>) <I>vs</I> those carrying none showed an adjusted odds ratio of 0.113 (<I>P</I>=0.004) for response, and adjusted hazard ratios of 3.748 (<I>P</I>=0.0001) for TTP and 2.961 (<I>P</I>=0.006) for death.</P><P><B>Conclusion:</B></P><P>Polymorphisms of <I>CYP2A6</I> and <I>ERCC1 19442C</I>><I>A</I> correlated with the efficacy of S-1/cisplatin.</P>

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