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권순범,안효원,강준구,손병용 대한상하수도학회 2004 상하수도학회지 Vol.18 No.2
DAF process has been designed considering raw water quality characteristics in Korea. Although direct filtration is usually operated, DAF is operated when the freshwater blooms occur or raw water turbidity become high. Pre-sedimentation is prepared in case when raw water turbidity is very high by rainstorms. A main feature of this plant is that the operation mode can be changed (controlled) based on the characteristics of raw water to optimize the effluent quality and the operation costs. Treatment capacity (surface loading rate) and efficiency of DAF was found to be better than conventional sedimentation process. Moreover, lowdensity particles (algae and alum flocs) are easily separated while it is difficult to remove in sedimentation. One of the main concerns in adoption of DAF (Dissolved-Air-Rotation) process is a high raw water turbidity problem. That is, DAF is not adequate for raw water, which is more turbid than 100MU. In order to avoid this problem, pre-sedimentation basins are prepared in OAF plant to decrease the turbidity of DAF influent. For simulation of the actual operation, bench and full-scale tests were performed for highly turbid water conditions. Consequently, DAF process coupled with sedimentation is suggested that pre-sedimentation with optimum coagulation prior to DAF would be appropriate.
김현준,류정섭,권효석,조형래 경상대학교 생산기술연구소 2003 工學硏究院論文集 Vol.19 No.-
This paper introduces trust measurement that is composed of trust variables and fuzzy cognitive map. The improved trust measuring method using a stratified FCM can be used to measure the level of risk involved in a specific auction transaction concerned. To reduce the auction transaction cost and time, the proposed system recommends a differentiated transaction protocol according to the risk based on trust measurement. In this system, trust measurement can also be applied for differentiated and varied auction services.
조영석,권기현,이준철,나소영,이효진,홍우정,이유선,김군순,송민호,김영건,노흥규 충남대학교 의학연구소 2003 충남의대잡지 Vol.30 No.2
Prediction of thrapeutic response to radioiodine in Graves' disease is poorly understood. Although thyrotropin binding inhibitor immunoglobulin(TBII) level is a strong index for relapse after antithyroid drug medication, conflicting results are reported regarding its prognostic significance in Graves' disease treated with RAI. This study is dengned to evaluate possible relationship between post-treatment hypothyroidism and TBII in Graves' disease treated with RAI. Fourty two patient with Graves' disease after radioiodine treatment were studied retrospectively. The subject were divided into hypothyroid group and euthyroid or hyperthyroid group. We evaluated the association of hypothyroidism and TBII with radioiodine treatment dose. The mean age of hypothyroid group was 48±11 years and euthyroid or hyperthyroid group was 47±12 years. There was no difference in two groups. And there was no significant difference in post- treatment TBII between two groups(49.9±28.5%, 29.9±14.3%, p-value >0.05). The treatment-dose had no influence on post-treatment thyroid state. Euthyroid or hyperthyroid group was done with 13.6±6.9mCi and hypothyroid group was 17.0±10.4mCi(p-value > 0.05). TBII had no prognostic significance on long-term hypothyrodism in Graves' disease treated with radioiodine. And, treatment-dose had no influence on post-treatment thyroid state.
Si Bulk Micromachining을 위한 Wafer Rolling Etching 및 그 특성
김건년,이보나,박효덕,신상모,공경준,장동근,김병철,권혁채,이봉희 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
A wafer rolling etching system for the silicon bulk micromachining has been designed and fabricated. The silicon diaphragms were anisotropically etched in a 24.5 weight percent KOH solution. Compared to the conventional KOH etching systems, pyramidal hillocks, and wave-shaped structures on the etched surfaces were greatly reduced by using this system. After etching for time of 438 minutes, the average etched depth and the etch-rate were measured to be 537μm and 1.22μm/min, respectively. The average etching uniformity of etching depth was 0.87% in 5-inch wafer. Our results showed that the wafer rolling method enhanced etch uniformity and etch rate.
Lee, Youn-Ri,Lee, Chang-Kwon,Park, Hyo-Jun,Kim, Hyo-Jin,Kim, Jung-Hwan,Kim, Jae-Heung,Lee, Keun-Sang,Lee, Yun-Lyul,Min, Kyung-Ok,Kim, Bo-Kyung Korean Physical Therapy Science 2006 대한물리치료과학회지 Vol.13 No.2
Vascular smooth muscle contraction is mediated by activation of extracellular signal-regulated kinase (ERK) 1/2, an isoform of mitogen-activated protein kinase (MAPK). However, the role of stress-activated protein kinase/c-Jun N-terminal kinase (JNK) in vascular smooth muscle contraction has not been defined. We investigated the role of JNK in the contractile response to norepinephrine (NE) in rat aortic smooth muscle. NE evoked contraction in a dose-dependent manner, and this effect was inhibited by the JNK inhibitor SP600125. NE increased the phosphorylation of JNK, which was greater in aortic smooth muscle from hypertensive rats than from normotensive rats. NE-induced JNK phosphorylation was significantly inhibited by SP600125 and the conventional-type PKC (cPKC) inhibitor Go6976, but not by the Rho kinase inhibitor Y27632 or the phosphatidylinositol 3-kinase inhibitor LY294002. Thymeleatoxin, a selective activator of cPKC, increased JNK phosphorylation, which was inhibited by $G{\ddot{o}}6976$. SP600125 attenuated the phosphorylation of caldesmon, an actin-binding protein whose phosphorylation is increased by NE. These results show that JNK contributes to NE-mediated contraction through phosphorylation of caldesmon in rat aortic smooth muscle, and that this effect is regulated by the PKC pathway, especially cPKC.
Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD
Kwon Hyo-Jun,박재근 한국물리학회 2022 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.81 No.9
Si3N4 wafers used for fabricating vertical 3D NAND fash memories are contaminated by various metallic, organic, and inorganic impurities. A process technology to efectively remove (NH4)2SiF6 powders generated on the surface of Si3N4 wafers processed by HF VPD was studied. It was confrmed that (NH4)2SiF6 powders were generated by a chemical reaction between Si3N4 and HF. In addition, the density and diameter of the powders depended on the thickness of the Si3N4 layers. The density of the powder increased from 317 to 2101 ea/mm2 as the thickness of the Si3N4 layer increased from 30 to 70 nm, and then rapidly decreased to 85 ea/mm2 for the 100-nm-thick Si3N4 layer. However, as the thickness of the Si3N4 layer increased from 30 to 70 nm, the diameter (approximately 10 μm) of the powder did not signifcantly change, but rapidly increased to approximately 30 μm when the Si3N4 layer thickness reached 100 nm. This was because more powders were generated by the thicker Si3N4 layer, but the powders generated on the 100-nm-thick Si3N4 layer aggregated more to reduce the surface energy. Moreover, we found that the heating and DIW cleaning processes efectively eliminated the (NH4)2SiF6 powders on the surface of the Si3N4 wafer processed by HF VPD. Furthermore, we determined the optimal heating and cleaning process conditions for complete decomposition: a temperature of 170 °C, time of 120 s, and pressure of 120 Torr in the vacuum oven for the heating process, and a temperature of 25 °C and time of 30 s for the cleaning process. Our proposed method for efectively eliminating (NH4)2SiF6 powder on Si3N4 wafers processed by HF VPD can be applied to monitor the level of impurity contamination in the fabrication process.