n-GaAs 구조에서의 ArF excimer laser annealing에 따른 Photoreflectance 특성 연구

김기홍,유재인,심준형,배인호,임진환,김진희,유재용,Kim, Ki-Hong,Yu, Jae-In,Sim, Jun-Hyoung,Bae, In-Ho,Lim, Jin-Hwan,Kim, Jin-Hi,Yu, Jae-Yong 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.2

n-GaAs의 시료를 furnace annealing 처리와 laser annealing 처리를 한 후, PR 방법으로 비교 조사하였다. 시료는 Furnace annealing을 5 분간 $400{\sim}800^{\circ}C$에서 처리한 시료와 ArF excimer laser($30{\sim}50\;W$)로 5 분간 Laser annealing 처리 한 시료로 준비하였다. Furnace로 annealing을 한 경우에 주 신호(정점)는 1.43 eV에서 관측되었는데 비해 laser로 annealing 한 샘플은 1.42 eV로 0.01 eV가 더 작게 관측되었다. 이는 laser annealing이 furnace annealing 보다 표면과 내면에서 일어나는 열처리 효과가 더 고르게 일어나가 때문이다. We investigated variation of the photoreflectance(PR) signals for n-GaAs furnace and laser annealed. The samples were annealed by using ArF excimer laser(5 min, $30{\sim}50\;W$) and furnace(5 min $400{\sim}700^{\circ}C$). The PR signals(top point) measured from the ArF excimer laser annealed sample showed 1.42 eV and furnace annealed sample showed 1.43 eV. This result is ArF excimer laser annealed sample was uniform annealed surface and inter state.

Flow 센서응용을 위한 SOI bridge resistor의 제조

심준환,조찬섭,이종현 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1

Porous silicon layer (PSL) was fabricated by anodic reaction of n^(+) layer of n^(+)/n silicon structures, The dependence of HF concentration, applied bias and reaction time on the porosity of PSL were investigated. FIPOS-SOI bridge resistors were achieved for the application to flow sensors using n/n^(+)/n silicon structures, Those resistors are thermally isolated by oxidized porous silicon. The SOI bridge was 50μm wide, 900 μm long, and 5μm thick, Measured TCR(temperature coefficient of resistance) was 1.1x10^(-3)/℃.

학교체육과 지역사회체육의 연계실태와 실천방안

강전민,가경환,권창기,윤해철,손수범,변해심,신민철 한국스포츠리서치 2004 한국 스포츠 리서치 Vol.15 No.6

This study was formed the basis of propelling for being closely connecting between School PE(Physical Education) and Local Society Exercise for regarding the cooperation possibility depending on the actual situation. From this, it is helpful for evaluating the total understanding of the present condition form School PE and Local Society Exercise and grasping the realities concretely. To gain the above result, the subject of study is on 48 agencies among 50 agencies that include 30 elementary and middle schools, 15 government offices, 5 YMCA offices. After investigating the plan of providing physical activity program except result PE class and the connecting program with School PE and its activation, it comes to the conclusion below this. There is the period of possible time for propelling the cooperating model at School and Local Society PE which is special activity class after school, club activity class, discretional activity class and the vacation, weekends. And also there are many participating agencies that are school, local society, public sports center and community, the youth group, local autonomous entity PE post, prfessional physical association and community, city and countries Education Office and the sports-lover's group etc. So far, the connecting program is operated at 24 agencies which are 3 elementary school(30%), 5 middle school(50%), 4 high school(40%)m 7 government office(70%), 5 YMCA office(80%). As the reason of non-operating it, the first is the lack of the charger, spare time and considering teacher's advantage when time is arranged at the teacher and leader's part. The second is the falling behind facility and the lack of place and appliance for practicing. The third is the insufficient of connecting program at program part and increasingly number of students who are individual participating at the side of local society physical agency at school. The forth is the lack of finances for running at economy part and overpaying of using fee. The fifth is the lack of the activity time at the elementary school and putting first in importance the exam for university enterance at middle and high school. The sixth is the parents and principals and school committee have little understanding of the physical educating in common at recognition part. The seventh is the cooperating company's preparation is not enough and incomplete relation each other. Looking into the opinion for activating plan of connecting program which is classified into common contents, the result is presented the same reaction both of them that the professional leader arrangement is needed at teacher and leader's part. At the facility expansion and open program part is required for a various program. In the case of school at economy condition part, more cheaper than expenses for facilities is needed and also the renovation of the education system And at the recognition part, the positive attitude of school is needed. At the safety part, the solution of safety problem for responsibility is needed. At the administration part, the support for professional agency and the change of systemic role for connecting agency.

중국 광동성 한국전통정원 조성사업 기본계획

서주환,이준근,심성보,전영임 경희대학교 디자인연구원 2004 예술· 디자인학연구 Vol.7 No.1

The cultural interchanges have been dramatically increased between Korea and China since the diplomatic agreement on the 24th of August, 1992, Among the several discussions between the two countries, particularly building up Korea traditional garden will take concrete shape in Kwan-dong in China. These followings are the basic plans. First, the project approaches the garden as a place for the interchange and the cooperation between the counties, and where people can experience Korea traditional garden. Secondly, it is plotted to express the distinct character and originality of Korea traditional garden. Third, it applies the same materials, subject matters and the same construction method of Korea traditional garden. We can use the most similar materials if it is not possible. Fourth, the project is plotted to make the efficient use of the land form to decrease the damage of natural environment.

FOPS(Film on Porous Silicon)를 이용한 ZnO 에어브리지의 제작

허정준,류인식,심준환,조찬섭,이종현 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1

Micromachining technique by FOPS(Film on Porous Silicon) method using ZnO thin film was studied to fabricate ZnO air-bridge type microstructures. Porous silicon was formed selectively in n^(+)-diffused region of (100) oriented silicon substrate by anodic reaction in 20 wt% HF solution. ZnO thin film was deposited on the porous silicon layer by RF magnetron sputtering and then pattern was defined by standard photolithography. Finally, porous silicon was etched away in 5 wt% NaOH solution. The fabricated ZnO microstructures have 20μm width, 40μm thickness and microstructure was cleanly formed on the cavity. Also, microstructure of arbitrary shape was fabricated.

촉각센서를 위한 실리콘 마이크로다이어프램 배열의 제조

박기열,심준환,류인식,조찬섭,이종현 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1

Silicon diaphragm arrays were fabricated by silicon micromachining using porous silicon. Fabricated diaphragms consist of 3x3 array. The thickness of diaphragm is 5μm and theire size are 200x200, 300X300 and 400X400μm^(2), respectively. Several % of resistance change is observed, when stress was applied at diffused resistor on the diaphragm. Microdiaphragm arrays were easily fabricated by silicon micromachining using porous silicon, and we confirmed feasibilty of application at tactile sensor.

Silicone rubber 멤브레인을 이용한 압저항형 저차압센서의 개발

서창택,공성수,심준환,고광락,서현미,김영진,설철규,신장규,이종현 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1

A 4-beam piezoresistive differential pressure sensor using a silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n^(+)/n silicon substrates by an unique silicon micromachining technique using porous silicon etching. The width, length, and thickness of the beam is 120 μn, 600 μm, and 6 μm, respectively, and the thickness of the silicone rubber membrane was 36 gm. By the use of four-beam structure, the mechanical strength of the differential pressure sensor can be highly improved due to smaller shear stress. And the lower sensitivity of the sensor can be simply solved by combining two output signals of half-bridge. The effectiveness of the sensor is confirmed through an experiment and FEM simulation in which the differential pressure sensor is characterized.

마이크로머시닝을 이용한 Bump형 Probe Card의 제조

최원익,김용대,심준환,이종현 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1

Probe card is the most important part of testing IC chips. This work was related to silicon vertical probe card which enabled to simultaneously test multiple semiconductor chips. We presented Bump-type vertical probe card. It was fabricated by dry etching using RIE technique, isotropic etching, and bulk-micromachining on SDB wafer. The process used in this work was very simple and reproducible, which had good controllability in the probe card dimension and spacing. It is expected that the fabricated probe card can reduce testing time, can promote productivity and enables bum-in test.

스테인 에칭기법을 이용한 실리콘 마이크로머시닝

설정훈,신장규,심준환,류인식,이종현 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1

스테인 에칭기법을 이용하여 실리콘의 도핑 농도가 높은 영역을 선택적으로 식각하는 방법을 개발하였다. 이 방법은 양극 반응을 이용한 마이코로머시닝 방법에서와 같이 반응 시편의 뒷면에 전극을 연결하거나 특수한 반응기를 이용해 전류를 공급할 필요성이 없으므로 공정 단계가 간단해지고 표준적인 집적회로 공정에서도 응용될 수 있을 것이다. 또한 양극반응에서는 불가능한 n^(+)/p 구조 시편의 선택적인 식각도 가능하다. 본 연구에서는 스테인 에칭기법을 이용하여 n/n^(+)/n 3층 구조의 시편으로 켈틸레버 및 에어 브릿지 등을 실현하므로써 미세기계구조의 제조 가능성을 확인하였다. We have developed a preferential silicon etching method using stain etching technique. Current supply to the backside contact of silicon wafer and special reactor are not required in this method. Therefore this method is much simpler than anodic reaction method and could be applied to standard VLSI process. In addition, the n^(+) layer in n^(+)/p structure could be preferentially etched by this technique, which could not be implemented by anodic reaction method. We have also fabricated micromechanical structures like cantilevers and air-bridges on the n/n^(+)/n wafer using this stain etching technique.

자동차용 실리콘 가속도센서의 개발(Ⅱ)

이종현,신장규,이상룡,천희곤,조찬섭,심준환,류인식,박석홍,허정준,박기열 경북대학교 센서기술연구소 1994 연차보고서 Vol.1994 No.-

자동차의 air-bag 장치에 실용될 수 있는 압저항형 단결정 실리콘 가속도센서 칩을 개발하기 위하여 결정 실리콘 미세구조의 제조방법을 확립하고, 단위공정의 검증을 통하여 일괄공정에 의한 PROTO-TYPE 칩을 만드는 기술을 연구하였다. 단결정 실리콘 미세구조는 선택확산법을 이용하여 정확히 선택된 영역에만 air-gap을 형성하여 미세구조의 측면식각을 방지하는 선택확산법에 의한 실리콘 마이크로머시닝 기술로 제조하였다. 일괄공정을 위한 단위공정확립을 위하여 PROTY-TYPE 8빔 브릿지형 가속도 센서를 제조하였다. 제조된 칩의 가속도에 따른 출력전압은 선형성을 나타내고 있으며, 감도는 약 50 ㎶/V·g로 나타났다. 이 감도는 50G용 가속도센서의 사양을 만족하지 못했다. 이는 공정에 의한 문제라기 보다는 가속도센서의 시뮬레이션에 의해 설계한 구조가 이미 원하는 감도에 못 미친다는 것으로 생각된다. 따라서 2차 공정으로 제조될 가속도센서의 파라미터를 SuperSAP 유한요소 패키지를 이용하여 실리콘 미세구조부의 파라미터에 따른 특성을 시뮬레이션하였다. 설계된 50G용 가속도센서의 mass Pad의 반경 및 빔 길이, 빔 폭, 빔 두께, 그리고 mass의 각 파라미터 값은 700 ㎛, 120 ㎛, 5 ㎛, 1.0 ㎎ 이었다. 반도체 공정기술, 관성질량 제조법 및 선택확산을 이용한 마이크로머시닝을 사용하여 일괄공정으로 8빔 브린지형 가속도센서를 제조하였다. We researched the establishment of the silicon microstructure fabrication technique to develop a piezoresistive type silicon acceleration sensor chip and the technique to make a proto-type chip by the verification of the unit-process. Silicon microstructure is fabricated silicon micro-machining by selective diffusion method. This method prevent a side-etching of microstructure because selective diffused region is only formed an air-gap. We fabricated a proto-type 8-beam bridge-type acceleration sensor to establish the unit-process for the batch-process. The output voltage of the chip represented linearity with acceleration, and the sensitivity was about 50 ㎶/V·g. But this sensitivity dosen't satisfy the requirements of a practical acceleration sensor. The cause of this result is assumed not process problem, but the structure designed by simulation isn't suitable already. Threfore, the characteristics of parameters of the acceleration sensor that will be fabricated by 2nd-process is simulated by SuperSAP finite-element package. The determined parameter values of beam length, beam width, beam thickness, mass, and mass radius are 120 ㎛, 5 ㎛, 1.0 ㎎, and 700 ㎛, respectively. We fabricated 8-beam bridge-type acceleration sensor by batch-process using a semiconductor process technique, proof-mass fabrication method, and micromachinig using selective diffusion.