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류인식,이석수,이종현 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
A pH-ISFET using intrinsic 1μm thick Si on sapphire(SOS) has been fabricated to improve the encapsulation process for pH-meters. The ratios of the gate L/W for the ISFET were 20μm/400μm and 20μm/100μm. The source of the ISFET was designed to be electrically common with the top Si layer which was isolated by KOH etching. All diffusion sources were spin-on-dopants for p-well and n-source/n-drain. The gate of the ISFET was formed with the triple dielectric layers of 500Å thick SiO_(2)/700Å thick PECVD silicon nitride/500Å thick Ta_(2)O_(5). The Ta_(2)O_(5) layer was deposited by RF reactive sputtering after 'lift-off photolithography following Al patterning and thermally treated at 400 C in O_(2) to enhance its pH-sensitivity. The I-V characteristic of the MISFET without Ta_(2)O_(5) layer was stable and showed no kink effect, Its threshold voltage was typically -3.2 Volts. As the MISFET/ISFET was fully isolated on a sapphire substrate which had good dielectric property, the current leak probrems through the wafer cut-off surface were completely removed. The islands of the MISFET and the ISFET are electrically isolated from each other, which eliminates a silicon substrate bias effect.
류인식,설정훈,신장규,심준환,이종현 ( Insik Yu,Jung Hoon Sul,Jang Kyoo Shin,Jun Hwan Sim,Jong Hyun Lee ) 한국센서학회 1995 센서학회지 Vol.4 No.1
We have developed a silicon etching method by which highly doped layers are selectively etched using stain etching technique. Current supply to the backside contact of silicon wafer and special reactor are not required in this method. Therefore this method is much simpler than anodic reaction method and could be applied to standard VLSI process. In addition, highly doped layers of several wafer structures, including the structures where conventional anodic reaction method cannot be used, could be preferentially etched by this technique. We have also fabricated micromechanical structures such as cantilevers and air-bridges on the n/n^+/n wafer and air-bridges on the p/p^+ wafer using this stain etching technique.
( 100 ) 실리콘 기판의 결정방향에 따른 다공질 실리콘 형성의 이방성에 관한 연구
류인식,박기열,심준환,신장규,이정희,이종현 ( Insik Yu,Ki Yeul Park,jun hwan Sim,Jang Kyoo Shin,Jung Hee Lee,Jong Hyun Lee ) 한국센서학회 1995 센서학회지 Vol.4 No.4
We have observed anisotropic anodisation process for porous silicon formation. The starting material was (100) silicon n/n^+/n wafer structured by n^+-diffusion on n-type substrate and by subsequent n-epitaxial growth. After the top n-silicon epitaxial layer was etched to open the porous silicon layer(PSL) anodisation window, anodisation takes place only to n^+-buried layer. The process of porous silicon formation on (100) sample was anisotropic, which was evident from that the shapes of the reacted porous silicon layer was all squarelike regardless of the shapes of reaction windows. The experimental results show that the PSL anodisation process does not depend on chemical reaction but does on electrical conduction property, which is hole mobility depending on the crystal direction.
족삼리(足三里) 침자(鍼刺)가 위운동(胃運動)에 미치는 영향(影響)에 관한 신경학적(神經學的) 관찰(觀察)
황우준,류인식,Hwang, Woo-Jun,Ryu, In-Sik 대한침구의학회 2000 대한침구의학회지 Vol.25 No.2
To investigate the acupuncturing function of $ST_{36}$(足三里) on the gastric activity, four different treatment methods such as intact, local anesthesia, ligation and nerve dissection were implemented. Followings are the results from the present study. 1. When a simple acupuncture with intact, the stomach motility and frequency were increased without significance compared with control. 2. Under local anesthesia on femoral region, the stomach motility and frequency showed no such changes compared with control. 3. With ligation of femoral region, the stomach motility and frequency were decreased significantly compared with control. 4. When the siatic nerve was dissected, the stomach motility and frequency showed no such changes compared with control. Overall, the effect of acupuncture on the $ST_{36}$(足三里) was very closely related with the condition of surrounding area. It is assumed that further studies should be done for the investigation of mechanism behind the acupuncturing function in conjunction with the nervous system.