치아 기준의 악교정 수술용 석고모형 수술, 과연 가능하고 정확한가

이승훈,오성섭,이충국,박경란,이상휘,Lee, Seung-Hoon,Oh, Seong-Seob,Yi, Choong-Kook,Park, Kyung-Ran,Lee, Sang-Hwy 대한악안면성형재건외과학회 2011 Maxillofacial Plastic Reconstructive Surgery Vol.33 No.2

Purpose: Errors in orthognathic model surgery occur during the planning, measuring and/or moving of the models. However, there has been little effort to find ways to reduce these errors. In this study, we introduce a new orthognathic model surgery technique (Yonsei method) which adopts the tooth point as the reference and the occlusal index as a moving vehicle for the model. Methods: The technique consists mainly of: 1) measuring the three-dimensional lengths of model points, 2) fabricating and moving the occlusal index and 3) verifying the movement. Then we compared the accuracy of the Yonsei method to conventional methods, with special reference made to influencing factors. Results: Errors for the Yonsei method with the occlusal index were reduced to the range of 0.61~1.04 mm in three-dimension, providing a more accurate model surgery technique than conventional methods which have errors ranging from 0.77~3.11 mm. Conclusion: It provided us a more accurate model surgery technique based on the reference points onto the teeth and the use of occlusal index.

건설사업 설계초기단계 VE 적용방안

이승훈,구교진,현창택,Lee Seung-Hoon,Koo Kyo-Jin,Hyun Chang-Taek 한국건설관리학회 2005 건설관리 : 한국건설관리학회 학회지 Vol.6 No.3

본 연구는 설계초기단계에 적합한 VE 적용방안을 제안하고자 하였다. VE방법론은 설계단계 초기에 적용할 경우 더욱 효과적이므로 본 연구는 설계 프로세스 초기단계의 설계YE에 초점을 맞추고 있다. 관련 연구문헌의 고찰과 실무경험을 바탕으로 국내 건설산업에서 설계VE의 문제점을 도출하였다. 이러한 문제점을 해결하기 위하여 본 연구는 (1)설계단계별 VE실시시기를 구분하고, (2)건설산업에 적합한 VE대상선정 방법을 제안하며, (3)기능분석 프로세스를 보다 합리적이고 실용적으로 개선함으로써 (4)전체 설계VE 수행절차를 효율적으로 개선하고자 하였다. The purpose of this study is to present proper VE application methods to euly design phases. Since VE methodology is more effective on early stage of design phase, the study focused on application of VE methodology in early stage of design process. With the examination of past studies, obstacles of VE application in domestic construction industry are defined. To solve these problems, this paper presents (1) subdivision of VE execution time, (2) an appropriate VE targeting method for construction industry, (3) a resonable and practical function analysis process, and (4) modified design-VE job plan.

상악 전치부에서 단일 치아 발거 후 즉시 임플란트 식립

이승훈,김영성,김원경,이영규,Lee, Seung-Hoon,Kim, Young-Sung,Kim, Won-Kyung,Lee, Young-Kyoo 대한치주과학회 2007 Journal of Periodontal & Implant Science Vol.37 No.3

Implants placed immediately after tooth extraction have been shown to be a successfully predictable treatment modality. Several clinical papers suggest that placing implants immediately after tooth extraction may provide some advantages: reduction of the number of surgical procedures or patient visits, preservation of the dimensions of alveolar ridge, and shortening of the interval between the removal of the tooth and the insertion of the implant supported restoration. In this case report, three patients received single immediate implant placements to replace a maxillary anterior tooth at the time of extraction. As the three cases were somewhat different, treatment protocols had to be modified as follows: Case 1. Immediate implant placement with healing abutment connection. Case 2. Immediate implant placement with immediate provisionalization. Case 3. Immediate implant placement with Guided Bone Regeneration(GBR). Every implant of these cases was placed in proper position buccolingually, mesiodistally and apicocoronally, The procedures following implantation such as immediate provisionalization and GBR were free of problem. Healing of each case was uneventful. In all cases, treatment outcomes were mostly satisfactory and the results maintained during follow-up periods. However, one case (Case 3) showed some papilla loss due to failure in delicate soft tissue handling during surgery. This papilla loss was compromised by prosthetic means. In conclusion, immediate implant placement in the fresh extraction socket can be a valid and successful option of treatment in aesthetic area. Moreover, this treatment protocol seems to maintain the preexisting architecture of soft and hard tissues in most cases.

음성, 성문 및 호흡 통합 검사 시스템의 개발

이승훈,정원혁,최홍식,김수찬,임재중,김덕원,Lee, Seung Hoon,Jung, Won Hyuk,Choi, Hong-Shik,Kim, Soo-Chan,Im, Jae-Joong,Kim, Deok-Won 한국음성학회 2005 음성과학 Vol.12 No.4

Voice is made by systemic interaction of respiration, vocalization, articulation and resonation. There is no existing multi-channel voice analysis system to assess voice and respiration simultaneously. The most existing systems consist of. vocal fold vibration measurement such as stroboscopy, EGG (electroglottography) or laryngeal electromyography and voice analysis system. Since respiration has close relationship with voice simultaneous analysis of both vocal cord vibration and respiration are essential. In this study, a four channel integrated system are developed for acoustic analysis through microphone, vocal fold vibratory analysis using EGG, and respiratory analysis using two channel RIP (respiratory inductive plethysmography).

6 MeV 전자선의 차폐물질 원자번호와 조사야 크기에 따른 선량변화 연구

이승훈,곽근탁,박주경,김양수,차석용,Lee, Seung Hoon,Kwak, Keun Tak,Park, Ju Kyeong,Gim, Yang Soo,Cha, Seok Yong 대한방사선치료학회 2013 대한방사선치료학회지 Vol.25 No.2

목 적: 본 연구에서 우리는 6 MeV 전자선의 조사야 확대에 따른 선량변화가 차폐물질 원자번호와 관계가 있음을 알아보고 그 영향인자를 분석 하고자 한다. 대상 및 방법: 먼저 평행평판형 전리함(Exradin P11)을 $25{\times}25cm^2$ 폴리스티렌 팬텀표면에 평탄하게 끼운다. 허용투과율 5% 두께의 알루미늄, 구리, 납 물질들을 팬텀 상단에 차폐시킨 후 조사야 $6{\times}6$, $10{\times}10$ 그리고 $20{\times}20cm^2$별로 측정하였다. 조사조건은 선원-표면간거리 100 cm에서 기준조사야인 $10{\times}10cm^2$에 6 MeV 전자선을 이용하여 100 cGy 조사하였다. 다음으로 MCNP (Monte Carlo N Particle Transport Code)를 이용하여 각 물질 통과 후 발생되는 광자수, 전자수, 그리고 축적에너지를 계산하였다. 결 과: 허용투과율 5% 두께에 대한 차폐물 종류에 따른 측정결과 조사야 $10{\times}10cm^2$을 기준으로 한 $6{\times}6cm^2$과 $20{\times}20cm^2$의 두께변화율은 알루미늄에서 각각 +0.06%와 -0.06%, 구리에서 각각 +0.13%와 -0.1%, 납에서 각각 -1.53%와 +1.92%였다. 계산결과 조사야 $10{\times}10cm^2$ 대비 $6{\times}6cm^2$, $20{\times}20cm^2$의 축적에너지는 차폐를 하지 않았을 경우 각각 -4.3%와 +4.85%, 알루미늄 사용 시 각각 -0.87%와 +6.93%, 구리 사용 시 각각 -2.46%와 +4.48%, 납 사용 시 각각 -4.16%와 +5.57%였다. 광자수의 경우 차폐를 하지 않았을 경우 각각 -8.95%와 +15.92%, 알루미늄 사용 시 각각 -15.56%와 +16.06%, 구리 사용시 각각 -12.27%와 +15.53%, 납 사용 시 각각 -12.36%와 +19.81%였다. 전자수의 경우 차폐를 하지 않았을 경우 각각 -3.92%와 +4.55%, 알루미늄 사용 시 각각 +0.59%와 +6.87%, 구리 사용 시 각각 -1.59%와 +3.86%, 납 사용 시 각각 -5.15%와 +4.00%였다. 결 론: 본 연구로 조사야 증가함에 따른 차폐물 두께가 저 원자번호에서 감소하며, 고 원자번호에서는 증가함을 볼 수 있었으며, 계산을 통해 저 원자번호물질에서는 저지방사선, 고 원자번호물질에서는 산란전자가 영향을 주는 것을 알 수 있었다. Purpose: In this study, we analyzed how the dose change by field size effects on atomic number of shielding materials while using 6 MeV election beam. Materials and Methods: The parallel plate chamber is mounted in $25{\times}25cm^2$ the phantom such that the entrance window of the detector is flush with the phantom surface. phantom was covered laterally with aluminum, copper and lead which thickness have 5% of allowable transmission and then the doses were measured in field size $6{\times}6$, $10{\times}10$ and $20{\times}20cm^2$ respectively. 100 cGy was irradiated using 6 MeV electron beam and SSD (Source Surface Distance) was 100 cm with $10{\times}10cm^2$ field size. To calculate the photon flux, electron flux and Energy deposition produced after pass materals respectively, MCNPX code was used. Results: The results according to the various shielding materials which have 5% of allowable transmission are as in the following. Thickness change rate with field size of $6{\times}6cm^2$ and $20{\times}20cm^2$ that compared to the field size of $10{\times}10cm^2$ found to be +0.06% and -0.06% with aluminum, +0.13% and -0.1% with copper, -1.53% and +1.92% with lead respectively. Compare to the field size $10{\times}10cm^2$, energy deposition for $6{\times}6cm^2$ and $20{\times}20cm^2$ had -4.3% and +4.85% respectively without shielding material. With aluminum it had -0.87% and +6.93% respectively and with lead it had -4.16% and +5.57% respectively. When it comes to photon flux with $6{\times}6cm^2$ and $20{\times}20cm^2$ of field sizes the chance -8.95% and +15.92% without shielding material respectively, with aluminum the number -15.56% and +16.06% respectively and with copper the chance -12.27% and +15.53% respectively, with lead the number +12.36% and -19.81% respectively. In case of electron flux in the same condition, the number -3.92% and +4.55% respectively without shielding material respectively, with aluminum the number +0.59% and +6.87% respectively, with copper the number -1.59% and +3.86% respectively, with lead the chance -5.15% and +4.00% respectively. Conclusion: In this study, we found that the required thickness of the shielding materials got thinner with low atomic number substance as the irradiation field is increasing. On the other hand, with high atomic number substance the required thickness had increased. In addition, bremsstrahlung radiation have an influence on low atomic number materials and high atomic number materials are effected by scattered electrons.

III급 부정교합 환자에서 교정 치료 단독 혹은 악교정 수술 병용 여부에 관한 측모 두부계측 방사선사진학적 비교연구

이승훈,남동석,Lee, Seung-Hoon,Nahm, Dong-Seok 대한치과의사협회 1999 대한치과의사협회지 Vol.37 No.5

CMOS 이미지 센서용 NMOS-Diode eFuse OTP 설계

이승훈,하판봉,김영희,Lee, Seung-Hoon,Ha, Pan-Bong,Kim, Young-Hee 한국정보통신학회 2016 한국정보통신학회논문지 Vol.20 No.2

본 논문에서는 프로그램 선택 소자는 채널 폭이 큰 NMOS (N-channel MOSFET) 트랜지스터 대신 DNW (Deep N-Well) 안에 형성된 채널 폭이 작은 isolated NMOS 트랜지스터의 body인 PW (P-Well)과 source 노드인 n+ diffusion 영역 사이에 형성된 기생하는 접합 다이오드를 사용하는 NMOS-Diode eFuse OTP (One-Time Programmable) 셀을 제안하였다. 제안된 eFuse OTP 셀은 프로그램 모드에서 NMOS 트랜지스터에 형성되는 기생하는 접합 다이오드를 이용하여 eFuse를 blowing 시킨다. 그리고 읽기 모드에서는 접합 다이오드를 이용하는 것이 아니고 NMOS 트랜지스터를 이용하기 때문에 다이오드의 contact voltage 강하를 제거할 수 있으므로 '0' 데이터에 대한 센싱불량을 제거할 수 있다. 또한 읽기 모드에서 채널 폭이 작은 NMOS 트랜지스터를 이용하여 BL에 전압을 전달하므로 OTP 셀의 blowing되지 않은 eFuse를, 통해 흐르는 읽기 전류를 $100{\mu}A$ 이내로 억제하여 blowing되지 않은 eFuse가 blowing되는 문제를 해결할 수 있다. In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

가소제 함유 PVDF 나노섬유의 상용화 가능성에 관한 연구

이승훈,소윤미,장선호,심현주,김찬,Lee, Seung-Hoon,So, Yun-Mi,Jang, Seon-Ho,Shim, Hyun-Joo,Kim, Chan 한국섬유공학회 2017 한국섬유공학회지 Vol.54 No.4

The mechanical properties and softness of electrospun polyvinylidene fluoride (PVDF) nanofibers was improved by the addition of a small amount of tributyl citrate (TBC) plasticizer to PVDF spinning solutions. The PVDF nanofibers containing TBC were prepared by electrospinning and subsequent calendering. The morphology, mechanical properties, and thermal properties of the electrospun PVDF nanofibers were investigated using Field Emission Scanning Electron Microscopy (FE-SEM), tensile test and DSC analysis. The results of the tensile experiment indicate that the PVDF nanofibers containing 5 wt% of TBC have three times better strength and six times higher elongation in the mechanical direction (MD) compared to those of pure PVDF nanofibers. Thus, the results indicate that PVDF nanofibers containing TBC have potential applications not only in the textile industry but also in the electrical and biomedical fields. Further, the excellent mechanical properties and softness of the eco-friendly nanofibers containing TBC plasticizer is useful for its commercialization.

주요우울장애의 치료로서 경두개 직류자극술(Transcranial Direct Current Stimulation)의 현재

이승훈,김용구,Lee, Seung-Hoon,Kim, Yong-Ku 대한생물정신의학회 2018 생물정신의학 Vol.25 No.4

Transcranial direct current stimulation (tDCS) is a non-invasive brain stimulation method that delivers 1-2 mA of current to the scalp. Several clinical studies have been conducted to confirm the therapeutic effect of major depressive disorder (MDD) patients with tDCS. Some studies have shown tDCS's antidepressant effect, while the others showed conflicting results in antidepressant effects. Our aim of this review is to understand the biological bases of tDCS's antidepressant effect and review the results of studies on tDCS's antidepressant effect. For the review and search process of MDD treatment using tDCS, the US National Library of Medicine search engine PubMed was used. In this review, we discuss the biological mechanism of tDCS's antidepressant effect and the existing published literature including meta-analysis, systematic review, control trial, open studies, and case reports of antidepressant effects and cognitive function improvement in patients with MDD are reviewed. We also discuss the appropriate tDCS protocol for MDD patients, factors predictive of response to tDCS treatment, the disadvantages of tDCS in MDD treatment, and side effects.

HVPE 법을 활용한 GaN 성장 시 질화처리에 관한 연구

이승훈,이주형,이희애,오누리,이성철,강효상,이성국,양재득,박재화,Lee, Seung Hoon,Lee, Joo Hyung,Lee, Hee Ae,Oh, Nuri,Yi, Sung Chul,Kang, Hyo Sang,Lee, Seong Kuk,Yang, Jae Duk,Park, Jae Hwa 한국결정성장학회 2019 한국결정성장학회지 Vol.29 No.4

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE. HVPE는 GaN 단결정의 제조 방법 중 하나로 빠른 성장 속도가 장점인 상업적으로 널리 사용되는 성장 방법이다. HVPE 법에 의한 GaN 단결정 성장은 여러 공정으로 이루어지며, 특히 GaN 성장 전 기판의 질화 처리는 성장되는 GaN 단결정 품질에 상당한 영향을 미친다. 본 연구에서는 사파이어 기판 위에 GaN 단결정 성장 시 기판의 질화처리가 성장되는 GaN 단결정 품질에 미치는 영향을 알아보고자 하였다. 질화 처리를 제외한 다른 성장 조건은 동일하게 하였고 질화처리 시 기판에 공급되는 가스 유량을 다양하게 변화시킨 후 GaN 박막을 성장시키고, 성장된 GaN의 표면 특성평가를 통하여, HVPE 법에서의 질화처리 효과를 고찰하여 보고자 하였다.