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Repeat Vertebroplasty for the Subsequent Refracture of Procedured Vertebra
최상식,허원석,이재진,오석경,이미경 대한통증학회 2013 The Korean Journal of Pain Vol.26 No.1
Vertebroplasty (VP) can effectively treat pain and immobility caused by vertebral compression fracture. Because of complications such as extravasation of bone cement (polymethylmethacrylate, PMMA) and adjacent vertebral fractures, some practitioners prefer to inject a small volume of PMMA. In that case, however, insufficient augmentation or a subsequent refracture of the treated vertebrae can occur. A 65-year-old woman visited our clinic complaining of unrelieved severe low back and bilateral flank pain even after she had undergone VP on the 1st and 4th (L1 and L4) lumbar vertebrae a month earlier. Radiologic findings showed the refracture of L1. We successfully performed the repeat VP by filling the vertebra with a sufficient volume of PMMA, and no complications occurred. The patient’s pain and immobility resolved completely three days after the procedure and she remained symptom-free a month later. In conclusion, VP with small volume cement impaction may fail to relieve fracture-induced symptoms, and the refracture of an augmented vertebral body may occur. In this case, repeat VP can effectively resolve both the persistent symptoms and problems of new onset resulting from refracture of the augmented vertebral body due to insufficient volume of bone cement.
최상식,김원영,김원,임경수 대한의학회 2012 Journal of Korean medical science Vol.27 No.3
Central diabetes insipidus (DI), characterized by unexpected fatal hypernatremia, is a rare complication after successful cardiopulmonary resuscitation with therapeutic hypothermia,but may be potentially fatal if recognition is delayed. We describe here a patient who experienced cardiac arrest due to a pulmonary embolism, followed by successful resuscitation after induction of therapeutic hypothermia. The patient, however, suddenly developed unexpected hypernatremia with increased urine output and was diagnosed with central DI as a complication of cerebral edema, and eventually died. Our findings suggest that central DI should be considered as a possible complication following unexpected hypernatremia with increased urine output during therapeutic hypothermia and that desmopressin acetate should be used to treat central DI.
일제시대 홍주읍성의 공간구조 변화에 관한 연구 : 필지체계 및 소유권변화를 중심으로 Focused on Tranformation of Land System and Ownership
최상식,한삼건 대한건축학회 2001 대한건축학회 학술발표대회 논문집 - 계획계/구조계 Vol.21 No.2
The purpose of this study is to find out the process of transformation in Urban spatial structure through the transformation at Hongju Eup-sung in the period of Japanese Occupation, and to understand the process of the Japanese occupying down-town through the changes of land ownership. Land register and cadastral maps printed in the period of the Japanese colony was used for analysis. The period in this study is from 1912 to 1945, and is subdivided into four sections.
I-DEAS System Dynamics Analysis의 소개
최상식 한국전산구조공학회 1990 전산구조공학 Vol.3 No.4
I-DEAS System Dynamics Analysis는 컴퓨터에 의한 해석적 동특성 파악이 어려운 구조요소와 해석적 동특성 파악이 가능한 구조요소가 함께 결합되어 있는 복잡한 구조물에 대하여, 전자의 구조요소에 대해서는 실험에 의해 추출된 동특성을 후자의 구조요소에 대해서는 컴퓨터 해석에 의한 동특성을 사용하여 전체 구조 시스템에 대한 동적해석을 가능하게 하는 프로그램이다.
채널구조와 바이어스 조건에 따른 Si<sub>0.8</sub>Ge<sub>0.2</sub> pMOSFET의 저주파잡음 특성
최상식,양현덕,김상훈,송영주,이내응,송종인,심규환,Choi Sang-Sik,Yang Hun-Duk,Kim Sang-Hoon,Song Young-Joo,Lee Nae-Eung,Song Jong-In,Shim Kyu-Hwan 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1
High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.
한 , 일 양국어조사 「 は 」 , 「 が 」と 「 는 」 , 「 가 」の 비교연구 較硏究 : 일본어학습자の 작문の 오용례と 중심して 日本語學習者の作文の誤用例と中心して
최상식 한국일본어교육학회 1991 日本語敎育 Vol.7 No.1
韓國人이 日本語를 學習할 때 初級에서부터 中·上級에서까지 잘못 使用되기 쉬운 助詞 中의 하나인 「は」·「が」 에 관해, 특히 韓國語 助詞 「는」·「가」 와의 比較 및 日本語 學習者의 作文의 誤用例를 中心으로 考察하여 본 것이다. 「は」·「が」에 관해서는 日本에서 오랫동안 많은 硏究者에 의해 여러 角度에서 硏究되어 왔고, 韓國에서도 이 分野의 硏究 論文이 多數나오고 있으나, 아직도 論議 여지는 많다고 생각된다. 따라서 本論文에서는 韓國語를 母語로 하는 日本語 學習者가 母國語의 영향으로 發生하기 쉬운 誤用를 防止하기 위하여 「は」·「が」의 一般的인 機能과 相違點점을 알아보았다. 다음으로 韓國語 「는」·「가」와 ·「が」와의 對應 關係 및 日本語 學習者의 作文의 誤用例를 考察해 본 結果는 다음과 같다. 1.「は」는 必然的이고 本質的인 關係 (繼續 · 固定的인 關係)에 使用되어 진다. 地球は太陽の回りをますわる. 2. 「が」는 一時的인 關係나 偶然的 (不規則的인) 關係에 使用되어진다. チュ-リップの花が소いた. 3. 韓·日兩國語의 對應에 있어서, 韓國語의 「는/은」 과 「は」, 「가/이」 와 「が」 와의 相互相應關係는 規則的으로 나타난다. 그러나, 「가/이」 는 「が」 보다 主語를 나타내는 領域이 더욱 넓고, 「는/은」 은 「は」 보다 그 領域이 좁은 편이다. わたしは, 今晩演劇祭へはけません. 나는 오늘 저녁 연극제에는 못가겠오. わたしは虎がこわい. 나는 호랑이가 무섭다. 4. 日本語 學習者의 作文의 誤用例에서 나타나는 「は」·「が」의 使用의 問題點은 주로 疑問詞를 述語에 포함하는 경우이다. 金さんが今るすですか. (が→は)
Bulk-Si와 PD-SOI에 형성된 SiGe p-MOSFET의 전기적 특성의 비교
최상식,최아람,김재연,양전욱,한태현,조덕호,황용우,심규환,Choi, Sang-Sik,Choi, A-Ram,Kim, Jae-Yeon,Yang, Jeon-Wook,Han, Tae-Hyun,Cho, Deok-Ho,Hwang, Yong-Woo,Shim, Kyu-Hwan 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.6
This paper has demonstrated the electrical properties of SiGe pMOSFETs fabricated on both bulk-Si and PD SOI substrates. Two principal merits, the mobility increase in strained-SiGe channel and the parasitic capacitance reduction of SOI isolation, resulted in improvements in device performance. It was observed that the SiGe PD SOI could alleviate the floating body effect, and consequently DIBL was as low as 10 mV/V. The cut-off frequency of device fabricated on PD SOI substrate was roughly doubled in comparison with SiGe bulk: from 6.7 GHz to 11.3 GHz. These experimental result suggests that the SiGe PD SOI pMOSFET is a promising option to drive CMOS to enhance performance with its increased operation frequency for high speed and low noise applications.