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박상정,송정근,홍창희 東亞大學校 附設 情報通信硏究所 1996 情報通信硏究所論文誌 Vol.4 No.1
A novel semiconductor device called a MQW-IMD(Multi Quantum Well Injection Mode Device) is designed for the hardware implenentation of electronic pulse mode neural network. As the operation is analogous to biological neuron, the device can be used as basic PE(Processing Element) of artificial neural system. The neural trigger circuit consists of a MQW-IMD and paralled RC load. For the optimization of the trigger circuit, The electron energy accelerated in AlxGa₁- xAS/GaAs barrier was calculated Ensemble Monte Carlo method in according with the electric field for A1 mole fraction, x=0.4 In the consideration of electron temperature and average ionization rate as well as ionization cross section, we extracted the improved relationship between the pulse frequency and the input voltage.
신영철,송정근,홍창희 東亞大學校 附設 情報通信硏究所 1996 情報通信硏究所論文誌 Vol.4 No.1
Two Dimensional Hterojunction Device Simulator(HEDS) has been made in order to analyze the various physical phenomena and the structural effects which are frequently occured in heterojunction semiconductor devides. In HEDS Poisson equation and Drift-Diffusion current equation as well as current continuity equation were discretized by the finite difference method, and the matrix was calculated by Powell Hybrid method. Especially, the effects of interface and surface and bulk recombination centers were considered, and the grid points were easily defined with the graphic function making the users identify the suitability of the grid distribution. And the grid points were selected to be uniform or parabolic distribution by the users. The material parameters of alloy semiconductors which could be made of the binary such as GaAs, AlAs and InAs were estimated and the other materials which the users want to use could be easily inserted into the program. In order to prove the performance of HEDS, it was applied to AlGaAs/GaAs HBT and the results of the single and double heterojunction HBTs were compared. In future the functions of HEDS will be improved by including the quantum mechanical effects such as the tunneling and the reflection at heterojunction and the thermal effects, which will be selected by the choice of users.
양윤주,하영철,송정근,홍창희 東亞大學校 附設 情報通信硏究所 1999 情報通信硏究所論文誌 Vol.7 No.1
본 논문에서는 VLSI 전체 전력소비에 있어 비중이 높은 클럭 시스템의 전압 스윙 폭을 줄여 전력소비를 감소시킬 수 있는 저전압 클럭용 플립플롭을 제안한다. 제안된 플립플롭이 저전압 스윙 클럭으로도 동작함을 증명하고 이 플립플롭과 연계하기 위한 실제 전압 폭 감소 클럭 드라이버를 설계하였으며, 이 클럭 드라이버에 의해 기존의 클럭 드라이버에서 발생하는 전력소비를 1/4가량 감소시킬 수 있음을 설명했다. 본 논문에서 제시하는 플립플롭과 클럭 드라이버간의 연계동작과 소비전력 감소 효과는 SPLICE simulation을 통해 검증하였다.
Band-to-Band 터널링에 의한 게이트 유기 드레인 누설전류의 이차원 수치해석
이상훈,하영철,송정근,홍창희 東亞大學校 附設 情報通信硏究所 1999 情報通信硏究所論文誌 Vol.7 No.1
In this paper, we investigated the characteristics of gate-induced drain leakage(GIDL) current due to the band-to-band tunneling in off-state n-MOSFET. Two-dimensional process and device simulation were performed by TMA-SUPREM4 and MEDICI. S/D(Single-Diffusion Drain) and LDD(Lightly Doped Drain) devices not applied electrical stress are simulated in order to compare drain engineering effect on GIDL characteristics. GIDL current due to direct interband tunneling in LDD structure was lower than that of S/D structure because of lower n-doping concentration. This result suggests that electric field in the gate-to-drain overlap rgion is a key factor controlling band-to-band tunneling generation rate.
오재근,최기영,송재흥,김영국,채건식,주유환,설정식,손인호,차성극,이상찬 慶南大學校 附設 基礎科學硏究所 1996 硏究論文集 Vol.8 No.-
HClO₄(pH:2) 수용액에서 양극산화 방법으로 HgMnTe(HMT)의 표면에 산화막을 형성 시켰다. 산화막의 두께는 SEM으로 측정하였으며 10㎛였다. 전류-전압 특성곡선을 얻어 산화 피크 전압으로부터 HTeO₂?, TeO?, HHgO₂? 막이 형성되었음을 알 수 있었다. 산화시키지 않은 HMT와 HClO₄수용액에서 산화시킨 HMT에 대해 Hall전압 및 자기저항을 각각 측정하였다. 홀전압과 자기저항은 HMT보다 HMT산화막에서 더 컸으며 이것은 HHgO₂? 공격자가 홀의 역할을 하고, TeO₄? 산화막은 전하의 포획도를 낮게하기 때문으로 생각할 수 있다. Anodic oxidation processes on HgMnTe surface has been studied in standard aqueous HClO₄(pH:2) solution. The 10㎛ thickness of the anodic oxide layers was measured by SEM. The Composition of the anodic oxide layers are evaluated from current-voltage(I-V) characteristic of HgMnTe Oxidation. The layers are composed of mixed oxide. ??, TeO₄, and?? in HClO₄solution. Transport properties have been investigated in HMT oxide layer made in HClO₄solution and virgin HMT samples at 300K. Hall voltage and magnetoresistance are greater in oxide layer HMT than virgin HMT. As a result, we know that the vacancy of ??in an anodic oxide layer acts as hole and the resulting oxide ?? layer exhibit a reduced degree of charge trapping and increase magnetoresistance.
자생 차(Camellia sinensis L.)의 육묘 방법에 관한 연구
이용호,이종성,강남대,송근우,강동주,고영옥,정대수 동아대학교 2001 大學院論文集 Vol.26 No.-
These experiments were conducted to studies on methods raising seedling in Native Tea Trees(Camellia sinensis L.). this experiment was conducted for 2years from 1999 to 2000 in Kyeongnam Provincial Rural Development Administration(R.D.A) The results were summarized as follows: 1. Germination percentage, mature seedling percentage, tiller, leaf number, leaf length and dry weight become higher Cup Pot Φ16cm treatment plot, plant height and leaf area was high some Net Pot Φ15cm treatment plot. 2. The growth of underground and aboveground show a good result all Cup Pot Φ16cm treatment plot. 3. The T/R rate of Cup Pot Φ16cm treatment plot were found 100% and Cup Pot Φ15cm treatment plot were found 114%. 4. The economic gains become higher Cup Pot Φ16cm.
鄭照根,宋榮珉 東亞大學校 大學院 2000 大學院論文集 Vol.25 No.-
The application of the commutation of responsibility, in the Act of Accidental Fire, with non-performance of supervisor, to the responsibility of supervisor is one of the important matter in legal theory and cases. In my thought, responsibility of supervisor is the concept out of the principle of self-responsibility, so it is harsh that supervisor has responsibility for minor negligence because of duty of care for person under disability. Hence, cases in the supreme court are not appropriate. As above, in the view of restraint of application of the Act of Accidental Fire, it is contradicting that supervisor has responsibility only in cases with gross negligence. As a conclusion, supervisor has casual responsibility for direct damages resulted from the person supervised and he has responsibility for bumed part only in the case of gross breach of duty.