http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
실리콘 기판과 ITO 가 코팅된 #7059 유리 기판간의 정전 열 접합
주병권,정회환,김영조,한정인,조경익,오명환 ( Byeong Kwon Ju,Hoi Hwan Chung,Young Cho Kim,Jeong In Han,Kyoung Ik Cho,Myung Hwan Oh ) 한국센서학회 1998 센서학회지 Vol.7 No.3
Si and ITO-coated #7059 glass wafers were electrostatically bonded by employing 7740 interlayer. It was inferred that the thermionic electrostatic migration of Na^+ ions in the #7740 interlayer played an important role in the bonding process through SIMS analysis. The temperature and voltage required for reliable electrostatic bonding were in the range of 180∼200℃ and 50∼70V_(dc)(10min), respectively. The low temperature Si-ITO coated glass bonding can be effectively applied to the packaging of field emission devices.
정전 열 접합을 이용한 FED 스페이서의 초청정 정렬/탑재 공정 개발
주병권,강문식,이윤희,Ju, Byeong-Kwon,Kang, Moon-Sik,Lee, Yun-Hi 대한전기학회 2000 전기학회논문지C Vol.55 No.12
In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.
주병권,이명복,이정일,김형곤,강광남,오명환,Ju, Byeong-Kwon,Lee, Myoung-Bok,Lee, Jung-Il,Kim, Hyoung-Gon,Kim, Kwang-Nham,Oh, Myung-Hwan 대한전자공학회 1990 전자공학회논문지 Vol. No.
표준 Si 공정기술을 이용하여 칩의 크기가 $1.7{\times}1.7{mm^2}$인 소형 압저항형 Si 압력센서를 제작하고 그 동작 특성을 평가하였다. 제작된 센서는 크기 $1.0{\times}1.0{mm^2}$, 두께 $20{\mu}m$의 n형 Si 다이아프램상에 4개의 붕소 확산저항이 브릿지 형태로 연결된 칩 구조를 가지며 최종적으로 게이지압을 측장할 수 있도록 상온 상압하에서 패키징하였다. 이 센서의 동작특성은 상온에서 압력감도 $14.2{\mu}V/V{\cdot}mmHg$ 정격 압력범위 0~760mmHg, 최대 비선형성 $1.0{\%}$ FS로 평가되었다. On the basis of standard Si processing, the miniaturized piezoresistive-type Si pressure sensor with a chip size of $1.7{\times}1.7{mm^2}$ was fabricated and its operating characteristics were investigated. The sensor chip has a full-bridge type of 4 boron-diffused resistors which is formed on an $1.0{\times}1.0{mm^2}$ area, $20{\mu}m$ thick n-type Si diaphragm and finally, encapsulated under room temperature, 1 atm in order to measure a gauge pressure. The operating characteristics of this sensor were determined as a pressure sensitivity of $14.2{\mu}$V/VmmHg, a rated pressure range of 0~760 mmHg, and a maximum nonlinearity of $1.0{\%}$ FS at room temperature.
(100) 실리콘의 깊은 이등망성 식각시 석각면의 가장자리에 존재하는 불균일성의 짤막한 고찰
주병권,하병주,김철주,오명환,차균현,Ju, Byeong-Kwon,Ha, Byeoung-Ju,Kim, Chul-Ju,Oh, Myung-Hwan,Tchah, Kyun-Hyon 한국재료학회 1992 한국재료학회지 Vol.2 No.5
(100) 실리콘 기판에 대해 깊온 비등방성 식각을 행한 경우 식각면의 가장자리에 존재하는 욜균일성은 식각 계면의 격자결함과 기계적 응력에 의한 것임을 판찰할 수 있었다. In deep anisotropic etching of (100)-oriented Si substrate, it could be observed that the non-uniformities existing near the etched-edge were caused by lattice defects and mechanical stress at the etching interface.
몰리브덴 팁 전계 방출 소자의 제조 및 다이아몬드 상 카본의 코팅효과
주병권,정재훈,김훈,이상조,이윤희,차균현,오명환,Ju, Byeong-Kwon,Jung, Jae-Hoon,Kim, Hoon,Lee, San-Jo,Lee, Yun-Hi,Tchah, Kyun-Hyon,Oh, Myung-Hwan 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.7
Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.