돼지 H-FABP 유전자의 다형성 및 경제 형질과의 연관성 구명

최봉환,김태헌,이지웅,조용민,이혜영,조병욱,정일정 한국동물자원과학회 2003 한국축산학회지 Vol.45 No.5

The purpose of this study was to detect association between genetic variation and economic trait in the porcine heart type fatty acid-binding protein gene as a candidate gene for the traits related with growth and meat quality in pigs. The H-FABP is a 15-kDa protein expressed in several tissues with high demand for fat metabolism such as cardiac and skeletal muscle and lactating mammary gland. H-FABP is small intracellular protein involved in fatty acid transport from the plasma membrane to the site of β-oxidation and/or triacylglycerol or phospholipid synthesis. In this study, H-FABP PCR-RFLP was performed in F_(2) population composed of 214 individuals form an intercross between Korean Native Boars and Landrace sows. PCR products form tow primer sets within H-FABP gene were amplified in 850bp and 700bp. Digestion of PCR products with the restriction digestion enzymes HaeⅢ and Hinf Ⅰ, revealed fragment length polymorphisms(RFL. Ps). The genotype frequencies from H-FABP/HaeⅢ was .29 for genotype DD, .53 for genotype Dd, and .15 for genotype dd, respectively. The genotype frequencies of HH, Hh, and hh from H-FABP(hinf Ⅰ was .38, .41, and .20, respectively, in the population.Relationships between their genotypes and economic traits were estimated. In H-FABP/HaeⅢ locus, there were specific genotypes(Dd and dd) associated with economic traits such as body weight. In H-FABP/Hinf Ⅰ Iocus, Genotypes of HH and Hh associated with growth traits such as body weights at 5, 12, and 30 week of age (p<.05 or p<.001) and back fat thickness, body fat including abdominal and trimmed fat (p<.001) and intramuscular fat(p<.05). The 'H'allele was positivecly associated with gaining of body weight and fatness deposition. In conclusion, a significant association of the H-FABP gene from its genetic variation was found on body weight, intramuscular fat and backfat thickness.

PHF2 histone demethylase acts as a tumor suppressor in association with p53 in cancer

Lee, K-H,Park, J-W,Sung, H-S,Choi, Y-J,Kim, W H,Lee, H S,Chung, H-J,Shin, H-W,Cho, C-H,Kim, T-Y,Li, S-H,Youn, H-D,Kim, S J,Chun, Y-S Macmillan Publishers Limited 2015 Oncogene Vol.34 No.22

Plant homeodomain finger 2 (PHF2) has a role in epigenetic regulation of gene expression by demethylating H3K9-Me2. Several genome-wide studies have demonstrated that the chromosomal region including the PHF2 gene is often deleted in some cancers including colorectal cancer, and this finding encouraged us to investigate the tumor suppressive role of PHF2. As p53 is a critical tumor suppressor in colon cancer, we tested the possibility that PHF2 is an epigenetic regulator of p53. PHF2 was associated with p53, and thereby, promoted p53-driven gene expression in cancer cells under genotoxic stress. PHF2 converted the chromatin that is favorable for transcription by demethylating the repressive H3K9-Me2 mark. In an HCT116 xenograft model, PHF2 was found to be required for the anticancer effects of oxaliplatin and doxorubicin. In PHF2-deficient xenografts, p53 expression was profoundly induced by both drugs, but its downstream product p21 was not, suggesting that p53 cannot be activated in the absence of PHF2. To find clinical evidence about the role of PHF2, we analyzed the expressions of PHF2, p53 and p21 in human colon cancer tissues and adjacent normal tissues from patients. PHF2 was downregulated in cancer tissues and PHF2 correlated with p21 in cancers expressing functional p53. Colon and stomach cancer tissue arrays showed a positive correlation between PHF2 and p21 expressions. Informatics analyses using the Oncomine database also supported our notion that PHF2 is downregulated in colon and stomach cancers. On the basis of these findings, we propose that PHF2 acts as a tumor suppressor in association with p53 in cancer development and ensures p53-mediated cell death in response to chemotherapy.

Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

Lee, Y.J.,Lee, S.H.,Schropp, R.E.I.,Lee, K.S.,Lim, J.W.,Yun, S.J. Pergamon Press 2016 International journal of hydrogen energy Vol.41 No.15

<P>The effects of multi-layered p-type microcrystalline (mu c-) Si:H windows on the performance of substrate-type amorphous Si:H thin film solar cells on opaque substrates were investigated. The results were well explained in terms of H-2-plasma-induced damage (HPID) at the p/i-interface and the near-interface region of the light-absorbing layer. The mu c-Si:H was deposited using plasma enhanced chemical vapor deposition in a H-2-rich atmosphere. A high microcrystalline volume fraction was obtained with a high H-2 dilution ratio, which can cause considerable HPID. Cell efficiency was enhanced with a multi-layered p-type mu c-Si:H composed of films with low and high crystalline volume fraction, compared to cells with single-layered mu c-Si:H. In the multi-layered p-type mu c-Si:H, the low crystalline film was placed on an i-Si:H layer to reduce HPID. The present work demonstrated that HPID was reduced at the p/i-interface and the near-interface region of the light-absorbing layer, and that the quality of the p-type mu c-Si:H needs to be a significant consideration to achieve high efficiency. Copyright (C) 2016, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.</P>

Glass / p μc-Si:H 특성에 따른 i μc-Si:H 층 및 태양전지 특성변화 분석

장지훈(Jang, J.H.),이지은(Lee, J.E.),김영진(Kim, Y.J.),정진원(Jung, J.W.),박상현(Park, S.H,),조준식(Cho, J.S.),윤경훈(Yoon, K.H.),송진수(Song, J.),박해웅(Park, H.W.),이정철(Lee, J.C.) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06

PECVD를 이용하여 제조된 미세결정질 p-i-n 실리콘 박막 태양전지에서, p 층은 태양전지의 윈도우 역할 및 그 위에 증착될 i {mu}c-Si:H 층의 'seed'층 역할을 수행하기 때문에, p층의 구조적 및 전기적, 광학적 특성은 태양전지의 전체 성능에 큰 영향을 미칠 수 있다. 본 연구에서는 SiH₄ 농도를 변화시켜 각기 다른 결정 특성을 갖는 p {mu}c-Si:H층을 제조하고 그 위에 i {mu}c-Si:H 층을 증착하여 p층의 결정 특성변화와 그에 따른 i {mu}c-Si:H 층 및 'superstrate' p-i-n 미세결정질 실리콘 박막 태양전지의 특성 변화를 조사하였다. P층의 경우, SiH₄ 농도가 증가함에 따라 결정분율 (Xc)이 감소하여 비정질화되었으며 그에 따라 dark conductivity가 감소하는 경향을 나타내었다. 각기 다른 결정분율을 가지는 p 'seed' 층 위에 증착된 태양전지는, p 'seed' 층의 결정분율이 증가함에 따라 개방전압, 곡선인자, 변환효율이 경향적으로 감소하였다. 이는 p 층 결정분율 변화에 따른 p/i 계면특성 저하 및 그 위에 증착되는 i {mu}c-Si:H 층의 결함밀도 증가 등에 따른 태양전지 특성 감소 때문인 것으로 판단되며, 이를 분석하기 위하여 i {mu}c-Si:H 층의 전기적, 구조적 특성 분석 및 태양전지의 dark I-V 특성 등을 분석하고자 한다.

운반기체와 Ligand의 첨가가 MOCVD Cu 증착에 미치는 영향에 관한 연구

최정환(J. H. Choi),변인재(I. J. Byun),양희정(H. J. Yang),이원희(W. H. Lee),이재갑(J. G. Lee) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3

(hfac)Cu(l,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) Cu 박막을 형성하였고, 운반기체가 MOCVD Cu 증착 특성에 미치는 영향에 관하여 조사하였다. 증착된 Cu 박막은 H₂ 운반 기체를 사용한 경우 Ar을 운반기체로 사용한 경우에 비하여 증착률의 증가와 더불어 낮은 비저항을 갖는 박막을 얻을 수 있었다. 또한 표면 거칠기의 개선과 강한 (111) 우선 배향성을 나타내는 박막을 얻을 수 있었으나 접착성의 경우에 있어서는 H₂ 운반 기체를 사용한 경우 감소하는 결과를 나타내었다. 이러한 접착성 감소의 원인은 AES분석에서 확인된 바와 같이 박막내부에 존재하는 F의 영향인 것으로 사료된다. H(hfac) ligand의 첨가 효과에 대하여 조사한 결과에서는 Ar 운반 기체를 사용한 경우 H(hfac) 첨가 시 증착률의 향상이 이루어졌으나 H₂ 운반 기체의 경우 큰 변화를 나타내지 않았고, 비저항의 경우에는 운반 기체와 관계없이 감소하는 결과를 보여 H(hfac) 사용이 증착 특정 개선에 효과적으로 나타났다. 따라서 본 연구에서는 운반기체 변화 및 H(hfac) ligand의 첨가 실험을 통해 MOCVD Cu의 증착기구를 조사하였으며, 이러한 공정조건의 변화가 Cu 박막의 표면거칠기 개선과 동시에 비저항을 낮추는 역할을 하는 것으로 나타났다. The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

Accelerated cosmological expansion without tension in the Hubble parameter : Fast evolution of the Hubble parameter <i>H(z)</i>

van Putten, Maurice H.P.M.,Gwak, B.,Kang, G.,Kim, C.,Kim, H.-C.,Lee, C.-H.,Lee, J.,Lee, S.,Lee, W. EDP Sciences 2018 The European Physical Journal Conferences Vol.168 No.-

<P>The <I>H</I>0-tension problem poses a confrontation of dark energy driving latetime cosmological expansion measured by the Hubble parameter<I> H</I>(<I>z</I>) over an extended range of redshifts <I>z</I>. Distinct values <I>H</I>0 ≃ 73 km s<SUP>-1</SUP> Mpcs<SUP>-1</SUP> and <I>H</I>0 ≃ 68 km s<SUP>-1</SUP> Mpcs<SUP>-1</SUP> obtain from surveys of the Local Universe and, respectively, ΛCBM analysis of the CMB. These are representative of accelerated expansion with <I>H</I>′(0) ≃ 0 by [see formula in PDF] and, respectively, <I>H</I>′(0) > 0 in ΛCDM, where [see formula in PDF] is a fundamental frequency of the cosmological horizon in a Friedmann-Robertson-Walker universe with deceleration parameter <I>q</I>(<I>z</I>) = -1 + (1+z)<I>H</I><SUP>-1</SUP><I>H</I>′(z). Explicit solution <I>H</I>(z) = <I>H</I>0 [see formula in PDF] and, respectively, <I>H</I>(z) = <I>H</I>0[see formula in PDF] are here compared with recent data on <I>H</I>(<I>z</I>) over 0 ≲ z ≲ 2.The first is found to be free of tension with H0 from local surveys, while the latter is disfavored at 2:7σ A further confrontation obtains in galaxy dynamics by a finite sensitivity of inertia to background cosmology in weak gravity, putting an upper bound of <I>m</I> ≲ 10<SUP>-30</SUP> eV on the mass of dark matter. A <I>C</I><SUP>0</SUP> onset to weak gravity at the de Sitter scale of acceleration <I>adS</I> = <I>cH</I>(<I>z</I>), where <I>c</I> denotes the velocity of light, can be seen in galaxy rotation curves covering 0 ≲ <I>z</I> ≲ 2 Weak gravity in galaxy dynamics hereby provides a proxy for cosmological evolution.</P>

Genetic and phylogenetic characterizations of a novel genotype of highly pathogenic avian influenza (HPAI) H5N8 viruses in 2016/2017 in South Korea

Kim, Y.I.,Park, S.J.,Kwon, H.I.,Kim, E.H.,Si, Y.J.,Jeong, J.H.,Lee, I.W.,Nguyen, H.D.,Kwon, J.J.,Choi, W.S.,Song, M.S.,Kim, C.J.,Choi, Y.K. Elsevier Science 2017 INFECTION GENETICS AND EVOLUTION Vol.53 No.-

<P>During the outbreaks of highly pathogenic avian influenza (HPAI) H5N6 viruses in 2016 in South Korea, novel H5N8 viruses were also isolated from migratory birds. Phylogenetic analysis revealed that the HA gene of these H5N8 viruses belonged to clade 2.3.4.4, similarly to recent H5Nx viruses, and originated from A/Brk/Korea/Gochang1/14(H5N8), a minor lineage of H5N8 that appeared in 2014 and then disappeared. At least four reassortment events occurred with different subtypes (H5N8, H7N7, H3N8 and H10N7) and a chicken challenge study revealed that they were classified as HPAI viruses according to OIE criteria. (C) 2017 Elsevier B.V. All rights reserved.</P>

표면항원 및 유전자분석에 의한 V. vulnificus균의 계통분류학적 연구(Ⅰ) : 지방산 조성 및 RAPD PCR에 의한 V. vulnificus균의 계통분류학적 연구

윤영희,김기상,신영학,이점규,오경수,유정식,이상원,이근용 국립보건연구원 1998 국립보건원보 Vol.35 No.-

Effect of low concentrations of hydrogen peroxide on the contractile responses of rat detrusor smooth muscle strips

Han, J.H.,Lee, M.Y.,Lee, S.Y.,Chang, I.H.,Kim, H.J.,Kim, W.,Myung, S.C. North-Holland ; Elsevier Science Ltd 2010 european journal of pharmacology Vol.638 No.1

This study was designed to determine how the contractility of rat detrusor smooth muscle strips changes in the presence of low concentrations of hydrogen peroxide (H<SUB>2</SUB><SUB>2</SUB>. The strips were dissected from the base of Sprague-Dawley rat bladders and their contractile responses to a cumulative increase in H<SUB>2</SUB><SUB>2</SUB>concentration (3x10<SUP>-6</SUP>3x10<SUP>-2</SUP>%) were measured. How the duration of exposure to the fixed concentration of 3x10<SUP>-4</SUP>% H<SUB>2</SUB><SUB>2</SUB>affected contractility was also examined. Moreover, the effect of 3x10<SUP>-4</SUP>% H<SUB>2</SUB><SUB>2</SUB>pretreatment on the response to cumulative increases in the concentrations of phenylephrine or acetylcholine (10<SUP>-8</SUP>10<SUP>-4</SUP>) was assessed. To elucidate the mechanism by which H<SUB>2</SUB><SUB>2</SUB>induced contraction, we examined the effect of pretreatment with 10nM Y-27632, 10μM indomethacin, 10μM SQ29548, 10μM verapamil, 10μM vitamin E, or 1μM Bay-K 8644 on the contractile responses generated by cumulatively increasing the concentration of H<SUB>2</SUB><SUB>2</SUB> H<SUB>2</SUB><SUB>2</SUB>induced contractile responses in Ca<SUP>2+</SUP>free physiological solution were also examined. Low concentrations of H<SUB>2</SUB><SUB>2</SUB>increased the contractile responses of the strips in a dose-dependent manner but increasing treatment duration decreased these responses. H<SUB>2</SUB><SUB>2</SUB>pretreatment significantly augmented the contraction induced by phenylephrine (P<0.05) but had no effect on the response to acetylcholine. Pretreatment with Y-27632, indomethacin, vitamin E, verapamil, and Bay-K 8644 significantly inhibited the H<SUB>2</SUB><SUB>2</SUB>induced contraction (P<0.05). SQ 29548-pretreatment had no effect. H<SUB>2</SUB><SUB>2</SUB>could not increase the contractile responses in Ca<SUP>2+</SUP>free physiological solution. Thus, low concentrations of H<SUB>2</SUB><SUB>2</SUB>may directly affect detrusor smooth muscles and thereby induce detrusor overactivity.

확산펌프 기반의 BCl<SUB>3</SUB> 축전결합 플라즈마를 이용한 GaAs와 AlGaAs의 건식 식각

이성현,박주홍,노호섭,최경훈,송한정,조관식,이제원,Lee, S.H.,Park, J.H.,Noh, H.S.,Choi, K.H.,Song, H.J.,Cho, G.S.,Lee, J.W. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4

본 논문은 확산펌프 기반의 축전 결합형 $BCl_3$ 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 $50{\sim}180$ mTorr, CCP 파워는 $50{\sim}200\;W$, $BCl_3$ 가스 유량은 $2.5{\sim}10$ sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 $BCl_3$ 가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 $0.25{\mu}m$/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 $100{\sim}200\;W$의 조건에서는 $0.3{\mu}m$/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 $BCl_3$ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 $100{\sim}200\;W$ 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75mTorr, 100 W의 CCP 파워 조건에서 $BCl_3$의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, $BCl_3$의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 $BCl_3$ 축전 결합 플라즈마는 주로 $500{\sim}700\;mm$ 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 $BCl_3$ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 $BCl_3$유량을 사용하였을 때 언더컷팅이 더 심했다. We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.