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Choi, S.,Bang, J.,Kim, H.,Beuchat, L.R.,Ryu, J.‐,H Blackwell Publishing Ltd 2011 Journal of applied microbiology Vol.111 No.6
<P><B>Abstract</B></P><P><B>Aims: </B> To determine survival and colonization of <I>Escherichia coli</I> O157:H7 on spinach leaves as affected by inoculum level and carrier, temperature and relative humidity (r.h.).</P><P><B>Methods and Results: </B> Spinach leaves were inoculated with suspensions of <I>E.?coli</I> O157:H7 in distilled water (DW) and 0·1% peptone water (PW) and incubated at 4, 12 and 25°C and 43, 85 and 100% r.h. The number of <I>E.?coli</I> O157:H7 on leaves (5·6 or 1·9 log CFU per leaf) inoculated using DW as a carrier medium increased significantly at 25°C and 100% r.h. within 120 h but remained constant or decreased significantly under other test conditions. <I>E.?coli</I> O157:H7 on leaves (5·4 log CFU per leaf) inoculated using PW as a carrier increased significantly within 72 and 24 h, respectively, at 12 or 25°C and 100% r.h.; counts using a low inoculum (2·2 log CFU per leaf) increased significantly within 24 h at 25°C.</P><P><B>Conclusions: </B> <I>Escherichia coli</I> O157:H7 can colonize on spinach leaves at 12 or 25°C in a 100% r.h. environment. Organic matter in the inoculum carrier may provide protection and nutrients which enhance survival and colonization.</P><P><B>Significance and Impact of the Study: </B> Colonization of <I>E.?coli</I> O157:H7 on spinach leaves as affected by organic matter in the inoculum, temperature and r.h. was determined. These observations will be useful when developing strategies to prevent growth of <I>E.?coli</I> O157:H7 on pre‐ and postharvest spinach.</P>
Choi, S.,Beuchat, L.R.,Kim, H.,Ryu, J.H. Academic Press 2016 FOOD MICROBIOLOGY Vol.54 No.-
<P>Germination rates of 11 types of sprout seeds (alfalfa, broccoli, kohlrabi, kyona, mustard, pak choi, red kohlrabi, red radish, red young radish, tatsoi, and violet radish) treated with ClO2 (200 mg/ml, 5 min) or dry-heat (80 degrees C/23% relative humidity [RH], 24 h) were determined. Pak choi, red radish, and tatsoi seeds showed highest tolerance to both ClO2 and dry-heat treatments. Next, pak choi seeds were inoculated with Escherichia coli O157:H7 (5.4 log CFU/g) or Salmonella enterica (4.8 log CFU/g) and sequentially treated with ClO2 (200 mg/ml, 5 min), drying (45 degrees C/23% RH, 24 h), and dry heat (80 degrees C/23% RH, 48 h). E. coli O157:H7 was inactivated, but S. enterica was not eliminated (>3.8 log CFU/g reduction). Pak choi seeds inoculated with the pathogens were treated with ClO2, drying, and dry heat and subsequently sprouted for 5 days. When seeds were not completely decontaminated, initial populations of E. coli O157:H7 and S. enterica on seeds (<1.0 log CFU/g) increased to >5.3 and >8.4 log CFU/g of sprouts, respectively. This study shows that sequential treatments of pak choi seeds with ClO2, drying, and dry heat are effective in reducing large numbers of E. coli O157:H7 and S. enterica without loss of seed viability. (C) 2015 Elsevier Ltd. All rights reserved.</P>
Choi, J.G.,Kang, H.M.,Kim, M.C.,Paek, M.R.,Kim, H.R.,Kim, B.S.,Kwon, J.H.,Kim, J.H.,Lee, Y.J. Elsevier Scientific Pub. Co 2012 Veterinary microbiology Vol.155 No.2
The H3 subtype avian influenza virus (AIV) is one of the most frequently isolated subtypes in domestic ducks, live poultry markets, and wild birds in Korea. In 2002-2009, a total of 45 H3 subtype AIVs were isolated from the feces of clinically normal domestic ducks (n=28) and wild birds (n=17). The most prevalent subtypes in domestic ducks were H3N2 (35.7%), H3N6 (35.7%), H3N8 (25.0%), and H3N1 (3.6%, novel subtype in domestic duck in Korea). In contrast, H3N8 (70.6%) is the most prevalent subtype in wild birds in Korea. In the phylogenetic analysis, HA genes of the Korean H3 AIVs were divided into 3 groups (Korean duck, wild bird 1, and wild bird 2) and all viruses of duck origin except one were clustered in a single group. However, other genes showed extensive diversity and at least 17 genotypes were circulating in domestic ducks in Korea. When the analysis expanded to viruses of wild bird origin, the genetic diversity of Korean H3 AIVs became more complicated. Extensive reassortments may have occurred in H3 subtype influenza viruses in Korea. When we inoculated chickens and ducks with six selected viruses, some of the viruses replicated efficiently without pre-adaptation and shed a significant amount of viruses through oropharyngeal and cloacal routes. This raised concerns that H3 subtype AIV could be a new subtype in chickens in Korea. Continuous surveillance is needed to prepare the advent of a novel subtype AIV in Korea.
Bang, J.,Choi, M.,Son, H.,Beuchat, L.R.,Kim, Y.,Kim, H.,Ryu, J.H. Elsevier Science Publishers 2016 International journal of food microbiology Vol.237 No.-
<P>Sanitizing radish seeds intended for edible sprout production was achieved by applying simultaneous treatments with gaseous chlorine dioxide (ClO2), high relative humidity (RH, 100%), and mild heat (55 degrees C). Gaseous ClO2 was produced from aqueous ClO2 (0.66 ml) by mixing sulfuric acid (5% w/v) with sodium chlorite (10 mg/mL) in a sealed container (1.8 L). Greater amounts of gaseous ClO2 were measured at 23% RH (144 ppm after 6 h) than at 100% RH (66 ppm after 6 h); however, the lethal activity of gaseous ClO2 against naturally occurring mesophilic aerobic bacteria (MAB) on radish seeds was significantly enhanced at 100% RH. For example, when exposed to gaseous ClO2 at 23% RH, the number of MAB on radish seeds decreased from 3.7 log CFU/g to 2.6 log CFU/g after 6 h. However, when exposed to gaseous ClO2 at 100% RH for 6 h, the MAB population decreased to 0.7 log CFU/g after 6 h. Gaseous ClO2 was produced in higher amounts at 55 degrees C than at 25 degrees C, but decreased more rapidly over time at 55 degrees C than at 25 degrees C. The lethal activity of gaseous ClO2 against MAB on radish seeds was greater at 55 degrees C than at 25 degrees C. When radish seeds were treated with gaseous ClO2 (peak concentration: 195 ppm) at 100% RH and 55 degrees C, MAB were reduced to populations below the detectable level (<-0.7 log CFU/g) within 2 h without decreasing the seed germination rate (97.7%). The lethality of combined treatments against artificially inoculated Escherichia coli O157:H7 was also evaluated. When exposed to gaseous ClO2 at 100% RH and 55 degrees C for 6 h, the initial number of E. coli O157:H7 (3.5 log CFU/g) on radish seeds decreased to below the detection limit (0.7 log CFU/g) by direct plating but it was not eliminated from seeds. The germination rate of radish seeds was not significantly (P> 0.05) decreased after treatment for 6 h. The information reported here will be useful when developing decontamination strategies for producing microbiologically safe radish seed sprouts. (C) 2016 Published by Elsevier B.V.</P>
운반기체와 Ligand의 첨가가 MOCVD Cu 증착에 미치는 영향에 관한 연구
최정환(J. H. Choi),변인재(I. J. Byun),양희정(H. J. Yang),이원희(W. H. Lee),이재갑(J. G. Lee) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3
(hfac)Cu(l,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) Cu 박막을 형성하였고, 운반기체가 MOCVD Cu 증착 특성에 미치는 영향에 관하여 조사하였다. 증착된 Cu 박막은 H₂ 운반 기체를 사용한 경우 Ar을 운반기체로 사용한 경우에 비하여 증착률의 증가와 더불어 낮은 비저항을 갖는 박막을 얻을 수 있었다. 또한 표면 거칠기의 개선과 강한 (111) 우선 배향성을 나타내는 박막을 얻을 수 있었으나 접착성의 경우에 있어서는 H₂ 운반 기체를 사용한 경우 감소하는 결과를 나타내었다. 이러한 접착성 감소의 원인은 AES분석에서 확인된 바와 같이 박막내부에 존재하는 F의 영향인 것으로 사료된다. H(hfac) ligand의 첨가 효과에 대하여 조사한 결과에서는 Ar 운반 기체를 사용한 경우 H(hfac) 첨가 시 증착률의 향상이 이루어졌으나 H₂ 운반 기체의 경우 큰 변화를 나타내지 않았고, 비저항의 경우에는 운반 기체와 관계없이 감소하는 결과를 보여 H(hfac) 사용이 증착 특정 개선에 효과적으로 나타났다. 따라서 본 연구에서는 운반기체 변화 및 H(hfac) ligand의 첨가 실험을 통해 MOCVD Cu의 증착기구를 조사하였으며, 이러한 공정조건의 변화가 Cu 박막의 표면거칠기 개선과 동시에 비저항을 낮추는 역할을 하는 것으로 나타났다. The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.
Park, H.H.,Yu, H.J.,Kim, S.,Kim, G.,Choi, N.Y.,Lee, E.H.,Lee, Y.J.,Yoon, M.Y.,Lee, K.Y.,Koh, S.H. Elsevier BV 2016 NeuroToxicology Vol.55 No.-
<P>Oxidative stress is a well-known pathogenic mechanism of a diverse array of neurological diseases, and thus, numerous studies have attempted to identify antioxidants that prevent neuronal cell death. GV1001 is a 16-amino-acid peptide derived from human telomerase reverse transcriptase (hTERT). Considering that hTERT has a strong antioxidant effect, whether GV1001 also has an antioxidant effect is a question of interest. In the present study, we aimed to investigate the effects of GV1001 against oxidative stress in neural stem cells (NSCs). Primary culture NSCs were treated with different concentrations of GV1001 and/or hydrogen peroxide (H2O2) for various time durations. The H2O2 decreased the viability of the NSCs in a concentration-dependent manner, with 200 mu M H2O2 significantly decreasing both proliferation and migration. However, treatment with GV1001 rescued the viability, proliferation and migration of H2O2 injured NSCs. Consistently, free radical levels were increased in rat NSCs treated with H2O2, while co-treatment with GV1001 significantly reduced these levels, especially the intracellular levels. In addition, GV1001 restored the expression of survival-related proteins and reduced the expression of death associated ones in NSCs treated with H2O2. In conclusion, GV1001 has antioxidant and neuroprotective effects in NSCs following treatment with H2O2, which appear to be mediated by scavenging free radicals, increasing survival signals and decreasing death signals. (C) 2016 Elsevier B.V. All rights reserved.</P>
Lee, J.H.,Choi, H.J.,Kim, W.M.,Jeong, J.H.,Park, J.K. Association for Applied Solar Energy ; Elsevier Sc 2016 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.136 No.-
The effect of pre-annealing on the phase formation behavior and efficiency of CZTS thin film solar cell prepared by sulfurization of sputtered Zn/(Cu,Sn) metal precursor with H<SUB>2</SUB>S gas was investigated. Precursor with stacking structure of Zn/(Cu,Sn) was deposited by sputtering of Cu, Zn, and Sn metal targets. The depth profile of metal elements and cell efficiency of the sulfurized CZTS films with H<SUB>2</SUB>S were observed to be critically dependent on the pre-annealing conditions. For the CZTS film prepared by sulfurization in N<SUB>2</SUB>-5vol.% H<SUB>2</SUB>S at 550<SUP>o</SUP>C after pre-annealing at 350<SUP>o</SUP>C in Ar, segregation of SnS phase at the surface region was observed to be pronounced. When the pre-annealing was performed at 350<SUP>o</SUP>C in N<SUB>2</SUB>-5vol.% H<SUB>2</SUB>S, however, uniform depth profile of metal elements with a small amount of CuS phase was observed. The CuS phase was disappeared with increase in the pre-annealing temperature in N<SUB>2</SUB>-5vol.% H<SUB>2</SUB>S. The phase formation behavior influenced by pre-annealing condition was observed to affect solar cell performance of the CZTS thin film synthesized at 550<SUP>o</SUP>C in N<SUB>2</SUB>-5vol.% H<SUB>2</SUB>S. In contrast to the CZTS thin film prepared with pre-annealing at 350<SUP>o</SUP>C in Ar showing bad efficiency (~0.93%), the CZTS solar cells fabricated with pre-annealing at 450<SUP>o</SUP>C in H<SUB>2</SUB>S shows higher efficiency of 3.04%. By the optimization of Zn layer thickness, solar cell efficiency of 4.40% was obtained in the CZTS thin film prepared with pre-annealing at 450<SUP>o</SUP>C in N<SUB>2</SUB>-5vol.% H<SUB>2</SUB>S. This phenomenon was due to the change in the secondary phase formation behavior during sulfurization of the Zn/(Cu,Sn) metal precursor with various pre-annealing conditions.