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계육 Petty의 저장중 항산화에 미치는 녹차분말의 영향
조재민,문영락 忠州大學校 2007 한국교통대학교 논문집 Vol.42 No.-
The present study was conducted to know the antioxidative effect of Green tea on the lipid in chicken patties. Green tea is known to have diverse physiological functions including cardiotonic function, diuretic function, detoxicating function, sterilization function, antiphlogistic function, and the suppressive effect of food poising. Accordingly, the addition of Green tea powder is mostly appropriate for being used to processed food. With a view to project the storage stability and the storage life prolongation of chicken meat, we gained the following results after reviewing the storage stability and the effect on the antioxidant according to the addition of Green tea powder during storage of chicken patties for 15days at 5℃ or -5℃. 1. The Effect of the antioxidant on the lipid of chicken patties was increased according to the addition of Green tea powder. 2. The Effect of the antioxidant on the lipid of chicken patties was not especially changed in TBA value according to the addition of Green tea powder 1.0% and Na-Nitrite 50ppm, 100ppm, and 150ppm especially. 3. The addition of Green tea powder demonstrated the best effect of suppressing the TBA value at a lower temperature(-5℃)
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
장우진,박영락,문재경,고상춘 한국전자통신연구원 2016 ETRI Journal Vol.38 No.1
This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) field-effect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
이현수,정동윤,박영락,장현규,이형석,전치훈,박준보,문재경,류상욱,고상춘,남은수 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.3
We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 μA at -15 V, a breakdown voltage of 794 V.
Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al<sub>2</sub>O<sub>3</sub> 패시베이션 효과
김정진,안호균,배성범,박영락,임종원,문재경,고상춘,심규환,양전욱,Kim, Jeong-Jin,Ahn, Ho-Kyun,Bae, Seong-Bum,Pak, Young-Rak,Lim, Jong-Won,Moon, Jae-Kyung,Ko, Sang-Chun,Shim, Kyu-Hwan,Yang, Jeon-Wook 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11
Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.
한해욱,유난이,전태인,진윤식,박익모,김정회,문기원,한연호,정은아,강철,이영락,고도경,이의수,지영빈,김근주,한경호 한국전자파학회 2008 전자파기술 Vol.19 No.5
최근 테라헤르츠 펄스 기술을 근간으로 하는 테라헤르츠 포토닉스 분야는 새로운 연구 주제로서 전세계적으로 큰 관심을 모으고 있다. 단지 순수과학적 측면에서 뿐만 아니라 상업적 응용 가능성이 높아짐에 따라 많은 선진국에서는 테라헤르츠 포토닉스의 발전을 위해 지대한 노력을 경주하고 있다. 저명한 국제 학술지와 국제 학회에서 테라헤르츠 펄스기술에 대한 논문의 수가 폭발적으로 증가하고 있다는 것은 이러한 사실을 뒷받침하고 있다. 테라헤르츠 응용 기술은 테라헤르츠 펄스 광원과 검출기, 그리고 관련된 수동 소자의 개발이 선행되어야 한다. 따라서 본 논문에서는 테라헤르츠 광전도 안테나, 광정류, 준위상 정합 기반 차주파수 발생, 전광 샘플링, 고속 실시간 측정, 테라헤르츠 전송선, 그리고 각종 도파로 구조와 같은 기초적이면서 핵심적인 소자와 측정 기술에 대하여 간략히 기술하고자 한다. In recent years, the field of ㎔ photonics based on ㎔ pulse technology has gained tremendous, worldwide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of ㎔ photonics. This fact is supported by the observation of the significant increase in the number of papers on ㎔ pulse technology presented in renowned international journals and conferences. The subject that is interesting for the ㎔ application is the development of ㎔ pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as ㎔ photoconductive antennas, optical rectificaton, difference frequency geneneration with quasi-phase matching structures, electrooptic sampling, high speed real time measurements, ㎔ transmission lines, and other various waveguide structures.
필드 플레이트 구조에 대한 GaN FET 항복전압특성 영향
장우진(Woojin Chang),김정진(Jeong-Jin Kim),배성범(Sung-Beom Bae),박영락(Young-Rak Park),문재경(Jae-Kyoung Mun),고상춘(Sang-Chun Ko) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
This paper presents various field plates (FPs) fabricated on GaN Field Effect Transistors (FETs) using AlGaN/GaN on sapphire substrates. GaN FETs with six different FPs were fabricated to compare with their FPs and lengths of FPs in terms of their breakdown voltage characteristics. The fabricated GaN FET with the gamma-shaped gate FP exhibited a breakdown voltage of 1190 V for a gate-to-drain spacing of 15㎛, while the GaN FET without any FP (a planar gate) showed a breakdown voltage of 1050 V for the same gate-to-drain spacing. For the GaN FETs with 10㎛ gate-to-drain spacing and gamma-shaped gate FPs, they were varied 0~2 ㎛ in the length of the gamma-shaped gate FPs and the GaN FET with 0.5㎛-length gamma-shaped gate FP showed more 50~140 V than the others. And in another processed wafer, the GaN FET with the source FP and the gamma-shaped FP together had a breakdown voltage of 1480 V more than 870 V with only the source FP for a gate-to-drain spacing of 16㎛.