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나경일,원종일,고진근,김상기,김종대,양일석,이진호 한국전자통신연구원 2013 ETRI Journal Vol.35 No.3
In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BVDS) and onstate current (ID,MAX), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer (SiO2) of a conventional RSO power MOSFET is changed to a multilayered insulator (SiO2/SiNx/TEOS). The inserted SiNx layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as BVDS and ID,MAX, simulation studies are performed on the function of the gate configurations and their bias conditions. BVDS and ID,MAX are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This ID,MAX variation indicates the specific on-resistance modulation.
ALD법과 PAALD법을 이용한 Cu 확산방지막용 TaN 박막의 특성 비교 및 분석
나경일,박세종,부성은,정우철,이정희 호서대학교 반도체제조장비국산화연구센터 2003 학술대회 자료집 Vol.2003 No.1
Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia(NH_3) as precursors at temperature of 250℃, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density(∼ 11.59 g/cm3) and lower carbon(∼ 3 atomic %) and oxygen(∼ 4 atomic %) concentration of impurities.
나경일,가동하,김상기,Jin-Gun Koo,김종대,양일석,이진호 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
The vertical power MOSFETs with deep trench structure is one of the most promising candidates to overcome the trade-off relationship between ON-resistance (RON) and blocking voltage (BVDS). Especially, 100V/100A rated trench power MOSFETs are used in component of many power systems, such as motor and LED lighting drive IC, DC-DC converter in electric vehicle, and so on. In this work, we studied the variation of electrical characteristics, such as threshold voltage (VTH), BVDS, and current drivability, with p-well doping concentration via SILVACO simulator. From simulation results, we found the dependence of BVDS and drain current (ID) as a function of p-well doping concentration with ion implantation energy of 80 KeV. As increase of p-well doping concentration at guard-ring region, both VTH and BVDS slowly increased but ID decreased because the boron lateral diffusion during fabrication process below gate trench region have an effected on doping concentration of p-body at active region. Additionally, 100V/100A rated TDMOSFETs (Trench Double-Diffused MOSFETs) with mesh and stripe types were successfully developed by using silicon deep etching process, respectively. The variations of electrical properties of the fabricated two different kinds of devices, such as VTH, BVDS, and current drivability, with cell design and density in TDMOSFETs were also studied. BVDS and VTH in stripe type TDMOSFET were 110 and 3 V, respectively. In the case of mesh type device, VTH was smaller 0.5 V than that of stripe type because of corner effect, BVDS improved about 20V compared to stripe type TDMOSFET due to the edge termination, and the maximum drain current (ID.MAX) was improved about 10% due to increase of gate length at same chip size. These effects reflected in different cell density devices. When the cell density increases, however, the increasing amount of current density has changed due to mobility degradation by increase of device temperature during high power operation.
40 W급 고출력 MMIC 개발과 고출력 증폭기 모듈 결합을 통한 Ku 밴드 반도체형 송신기(SSPA) 개발에 관한 연구
나경일,박재웅,이영완,김혁,강현철,김소수,Kyoungil Na,Jaewoong Park,Youngwan Lee,Hyeok Kim,Hyunchul Kang,SoSu Kim 한국군사과학기술학회 2023 한국군사과학기술학회지 Vol.26 No.3
In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.
나경일,김상기,Jin-Gun Koo,김종대,양일석,이진호 한국전자통신연구원 2012 ETRI Journal Vol.34 No.6
In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer (SiO_2) of a conventional device is replaced by a multilayered insulator (SiO_2/SiNx/TEOS) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and 1.1 mΩ㎠, respectively.