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김영진(Y. J. Kim),남기홍(K. H. Nam),조상희(S. H. Cho),김기완(K. W. Kim) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.4
고주파 마그네트론 스펏터링법을 이용하여 ZnO막을 제조하고 유리기판 위에 ZnO-SAW필터를 제작하였다. ZnO막의 제조 조건은 고주파 전력 150W, 기판용도 200℃, 분위기압 5 mTorr 및 O₂/(Ar+O₂)비 50%였다. 한편 IDT(Inter-digital transducer) 전극은 전극 폭을 2.56 ㎜, 전극 거리를 2.936 ㎜, λ/8 폭을 8 ㎛로 설계하였다. 제작된 ZnO-SAW필터의 주파수 응답을 측정하기 위해 소자는 mount(TO8)에 고정시켰다. ZnO SAW필터의 통과 대역 (3 dB대역폭)은 35.2~44.8 ㎒로 9.6 ㎒의 대역 폭을 나타내었으며 중심주 파수는 40 ㎒를 나타내었다. 또한 삽입 손실은 39 dB, 통과 대역에서의 리플(ripple)은 ±0.8 dB 및 rejection은 17 dB를 나타내었다. The zinc oxide thin films were prepared by the RF magnetron sputtering method and the ZnO-SAW filters were fabricated on glass substrates. Fabrication conditions of the ZnO films were such that RF power, substrate temperature, working pressure, and gas flow rate of Ar and O₂ were 150 W, 200℃, 5 mTorr, and 50%, respectively. On the other hand, IDT electrodes were electrode width of 2.56 ㎜, electrode length of 2.936 ㎜, and λ/8 width of 8 ㎛. In other to measure the frequency response of ZnO-SAW filter, device was grounded by cantype mount(TO8). The ZnO-SAW filter showed pass band of 9.6 ㎒, 35.2~44.8 ㎒, center frequency of 40 ㎒, insertion loss of 39 dB, pass band ripple of ±0.8 dB, and rejection of 17 dB.
다공질 실리콘 산화법을 이용한 MMIC 기판의 제조 및 그 특성
김기완,권오준,이종현,이정희,김경재,이재승,최현철 한국센서학회 1999 센서학회지 Vol.8 No.2
Microstrip line was fabricated on the oxidized porous silicon layer which has nearly electrically and chemically identical properties with thermally oxidized silicon layer. Thick oxidized porous silicon layer of few tenth of micrometers was prepared by thermal oxidation of porous silicon layer on silicon substrate. Multi-step thermal oxidation process warm used obtain high quality arid thick oxidised silicon layer and to release thermal stress. Microstrip line warm fabricated on the oxidized porous silicon layer. Its microwave characteristics were measured and the availability for MMIC substrate was investigated.
ZnS:Mn/ZnS:TbF3 적층구조의 형광층을 이용한 TFEL 소자의 제작 및 그 특성
김영진,김기완,박경빈,김호운,배승춘,조기현 한국센서학회 1997 센서학회지 Vol.6 No.1
The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/ZnS:TbF₃ has been fabricated. Insulate layers used (Pb,La)TiO₃ and SiO₂ thin films. The emission color was white. The TFEL device employing ZnS:Mn/ZnS:TbF₃(8000Å) stacked phosphor layers showed the threshold voltage of 78V_(rms). And the brightness of the TFEL device was 400 ㎼/㎠ at the applied voltage of 100V_(rms). The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.
고주파 마그네트론 스펏터링법으로 제조한 ZnO 박막의 기판에 따른 효과
김영진,김기완,권오준,유상대 한국센서학회 1996 센서학회지 Vol.5 No.6
ZnO thin films were prepared on glass and (012) sapphire substrates by rf magnetron sputtering. Polycrystalline ZnO films with a (002) orientation were obtained on glass substrates. (110) ZnO films were epitaxially grown on the (012) sapphire substrates. Surface acoustic wave properties were also measured for propagating along the c axis of ZnO film on the glass and sapphire substrates. The phase velocities (V_P) on glass and sapphire substrate at center frequency were 2&80 m/sec and 5980 m/sec and the effective coupling coefficient (k²) on the 0th mode were 0.98 % and 1.43 % respectively.
김영진,박재현,김기완,최병진 한국센서학회 1996 센서학회지 Vol.5 No.3
The PLT thin films on (100) cleaved b4g0 single crystal substrate have been fabricated by rf magnetron sputtering using a Pb0-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of Ar/O₂, and rf power density were 640℃, 10 mTorr. 10 sccm, and 1.7 W/㎠, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of 8X10^(11)Ω·cm, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450mV and signal to noise ratio of 7.2.
고주파 마그네트론 스펏터링법으로 제조한 PLT 박막의 특성
김영진,최병진,박재현,최시영,김기완 한국센서학회 1995 센서학회지 Vol.4 No.3
The PLT thin films on MgO substrate have been fabricated by RF magnetron sputtering and the dependence of properties on fabrication conditions have been studied. The PbO-rich target was used and the optimum fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, Ar/O₂ ratio, and rf payer was 640℃, 10 mTorr, 10 1, and 1.7 W/㎠, repectively. In these conditions, the PLT thin film showed the deposition rate of 62.5Å/min, the Pb/Ti ratio of 1/2, and the dielectric constant of 200. The FLT thin film showed good c-axis orientation and crystalinity acording to XRD and SEM analysis.