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배승춘,김영진,최규만,김기완 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.9
BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.
배승춘,김정환,김호운,박성근,김기완 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
PLT and PLZT feroelectric thin films were fabricated on ITO substrate by rf magnetron sputtering. Pressure was 30mTorr, rf power was 180W and substrate temperature was varied from room temperature to 500℃. In this case, PLT had the highest dielectric constant of 120 at 500 ℃, oppositly PLZT had the highest dielectric constant of 312 at room temperature. I-V characteristics of PLZT film were shown that leakage current of PLZT film deposited at room temperature was below 3μA at 100V.
배승춘(Seung Choon Bae),김정환(Jeong Hwan Kim),박성근(Sung Kun Park),권성렬(Sung Yul Kwun),김우현(Woo Hyun Kim),김기완(Ki Wan Kim) 한국센서학회 1999 센서학회지 Vol.8 No.1
White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was Ba_90.5)Sr_(0.5)TiO₃, substrate temperature was 400 ℃, working pressure was 30 mTorr, and Ar:O₂ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor layers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was 95 V_(rms), maximum brightness was 3,000 cd/㎡ at 150 V_(rms). Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).
TFELD 절연층을 위해 ITO glass 위에 증착시킨(Ba0.5,Sr0.5)TiO3 박막의 특성
권성렬,배승춘,박성근,김기완,김정환,최병진,남기홍 한국센서학회 2000 센서학회지 Vol.9 No.1
BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method: O₂/(Ar+O₂) mixing ratio was 10 %, substrate temperature was changed from R.T. to 500 ℃, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of 400 ℃, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below 3.3 X 10^(-7) A/㎠ at 5 MV/cm applied electric field, and transmittance was over 82 % at visible range.
TFELD 절연층을 위해 ITO glass위에 증착된 (Ba_(0.5),Sr_(0.5))TiO₃박막의 특성
김정환,배승춘,권성렬,정훈,박진우,김기완 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
We have studied that dielectric and electrical properties of (Ba_(0.5),Sr_(0.5))TiO_(3) thin films deposited on Indium Tin Oxide-coated glass substrate by using rf-magnetron sputtering method in this paper. Substrates were heated at room, 300℃ , 400℃, and 500℃. Working pressure was changed 5mTorr, 10mTorr, 20mTorr, 30mTorr respectively substrates temperature, and Ar:O_(2), ratio was fixed 9:1. SEM analysis was conducted to investigate thickness of BST thin films. Dielectric constant, current-voltage(I-V), and transmittance were measured. We observed difference of that thickness, dielectric constant, current-voltage(I-V), and transmittance due to variable substrates temperature and working pressure. We also obtained best conditions at 400℃, 30mTorr. Dielectric constant was 209.1 at 1kHz, leakage current density was below 7.35X10^(-7)A/cm^(2) at 100V, and transmittance was over 91%.
박욱동,배승춘,김기완 동양대학교 산업기술연구소 2000 東洋大學校 産業技術硏究所 論文集 Vol.2 No.1
A red colored thin film electroluminescent(TFEL) device was fabricated with a ZnS:SmF3 phosphor layer and BST insulating layers. The BST thin film was deposited on ITO coated glass substrate by RF magnetron sputtering method using a target of Ba0.5Sr0.5TiO3. The thickness of ZnS:SmF3 thin film, upper and lower BST insulating layer for a TFEL device were 500nm, 400nm, and 200nm, respectively. The ZnS:SmF3 TFEL device showed that the threshold voltage and maximum brightness of a TFEL device were 160Vrms and 125cd/㎡, respectively.
김기완,배승춘,박성근 한국센서학회 1997 센서학회지 Vol.6 No.6
We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mold lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were 850℃, 1150℃ respectively, end there was a lot of mass loss at higer sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were 330℃, 269℃ and 210℃ respectively. Using PLT cerarnie tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.