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      • CBD 방법에 의한 CdS 박막의 성장과 광전도 특성

        황광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

        Chemical bath deposition 방법으로 다결정 CdS 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 550℃로 열처리한 시료의 경우 X-선 회절무늬로 부터 외삽법에 의해 a_。와 c_。는 각각 4.1364 Å과 6.7129 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.35㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 150 K 까지는 압전산란에 의하여, 150 K 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdS thin films were grown on creamic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N_2 gas at 550℃ it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7120Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.

      • Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성

        홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

        Chemical bath deposition 방법으로 다결정 CdSe 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 450℃로 열처리한 시료가 X-선 회절무늬로 부터 외삽법에 의해 a_o와 c_o 는 각각 4.302 Å과 7.014 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.3㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 200 K 까지는 압전산란에 의하여, 200 k 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdSe thin films were grown on creamic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N_2 gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 Å and 7.014 Å, respectively. It grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical potical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivily (γ), maximum allowable power dissipation and response time on these samples.

      • SCISCIESCOPUS

        Novel signaling axis for ROS generation during K-Ras-induced cellular transformation

        Park, M-T,Kim, M-J,Suh, Y,Kim, R-K,Kim, H,Lim, E-J,Yoo, K-C,Lee, G-H,Kim, Y-H,Hwang, S-G,Yi, J-M,Lee, S-J Macmillan Publishers Limited 2014 CELL DEATH AND DIFFERENTIATION Vol.21 No.8

        Reactive oxygen species (ROS) are well known to be involved in oncogene-mediated cellular transformation. However, the regulatory mechanisms underlying ROS generation in oncogene-transformed cells are unclear. In the present study, we found that oncogenic K-Ras induces ROS generation through activation of NADPH oxidase 1 (NOX1), which is a critical regulator for the K-Ras-induced cellular transformation. NOX1 was activated by K-Ras-dependent translocation of p47<SUP>phox</SUP>, a subunit of NOX1 to plasma membrane. Of note, PKCδ, when it was activated by PDPK1, directly bound to the SH3-N domain of p47<SUP>phox</SUP> and catalyzed the phosphorylation on Ser348 and Ser473 residues of p47<SUP>phox</SUP> C-terminal in a K-Ras-dependent manner, finally leading to its membrane translocation. Notably, oncogenic K-Ras activated all MAPKs (JNK, ERK and p38); however, only p38 was involved in p47<SUP>phox</SUP>-NOX1-dependent ROS generation and consequent transformation. Importantly, K-Ras-induced activation of p38 led to an activation of PDPK1, which then signals through PKCδ, p47<SUP>phox</SUP> and NOX1. In agreement with the mechanism, inhibition of p38, PDPK1, PKCδ, p47<SUP>phox</SUP> or NOX1 effectively blocked K-Ras-induced ROS generation, anchorage-independent colony formation and tumor formation. Taken together, our findings demonstrated that oncogenic K-Ras activates the signaling cascade p38/PDPK1/PKCδ/p47<SUP>phox</SUP>/NOX1 for ROS generation and consequent malignant cellular transformation.

      • KCI등재

        Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure

        Y. S. Lee,M. Senthil Kumar,T. V. Cuong,J. Y. Park,J. H. Ryu,S. J. Chung,E.-K. Suh,C.-H. Hong 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1

        We report an amelioration of the electrical, thermal and optical performances of green InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with AlGaN/GaN short- superlattice (SSL)-inserted structure grown using metal-organic chemical vapor deposition. Ac- cording to an atomic force microscopic study, the GaN template with the SSL-inserted structure shows a signicant reduction in pit density compared to the conventionally-grown template. The insertion of the SSL is also found to alleviate the eect of threading dislocations on the degradation of the electrical performance and promotes the stability of the K-factor and a low thermal resis- tance under a long-term acceleration test. A relatively higher optical output power is obtained for SSL-inserted InGaN/GaN green LEDs at high injection currents. We report an amelioration of the electrical, thermal and optical performances of green InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with AlGaN/GaN short- superlattice (SSL)-inserted structure grown using metal-organic chemical vapor deposition. Ac- cording to an atomic force microscopic study, the GaN template with the SSL-inserted structure shows a signicant reduction in pit density compared to the conventionally-grown template. The insertion of the SSL is also found to alleviate the eect of threading dislocations on the degradation of the electrical performance and promotes the stability of the K-factor and a low thermal resis- tance under a long-term acceleration test. A relatively higher optical output power is obtained for SSL-inserted InGaN/GaN green LEDs at high injection currents.

      • SCIESCOPUSKCI등재
      • 다공성 Si의 발광 특성

        서영훈 ( Y. H. Seo ),남기석 ( K. S. Nahm ),서은경 ( E. K. Suh ),이영희 ( Y. H. Lee ) 한국공업화학회 1992 한국공업화학회 연구논문 초록집 Vol.1992 No.0

        Si은 지금까지는 그것의 간접천이형 특성 때문에 빛을 효율성있게 내는 것이 어려워 발광소자로 이용되기가 불가능한 재료로 알려져 왔다. 그러나 영국의 Canham 그룹이 미국 응용물리학회지(Applied Physics Letters)에 다공질 Si으로 부터 고효율 적생광 발광을 처음으로 보고한 이래 1991년 프랑스의 Grenoble대학, 미국의 AT&T 및 IBM 연구그룹들이 각기 이 현상의 재현성을 실험적으로 확인함으로서 광소자 재료로서 Si 반도체의 이용 가능성을 시사하였다. 그 이후 1991년 12월에 열린 미국 재료학회(Materials Research Society)와 1992년 3월에 개최된 미-일 물리학회에서 발광 Si에 관한 수십편의 논문이 발표되고 있어, 초기단계 이기는 하지만 발광 Si의 연구가 가속화되고 있는 실정이다. 이러한 이유로 발광 다공성 Si의 생성기구, 발광기구 및 구조 등에 관해서는 분명한 결론이 내려지지 못한 실정이다. 본 연구에서는 HF수용액 속에서 p형 Si기판을 양극반응(anodization)시켜 다공성 Si(PSL: porous silicon layer)을 제조하여 PL(photoluminescence)와 Raman측정을 하여 PSL의 발광특성과 구조를 조사하였다. 또한 IR을 이용하여 PSL표면에 결합된 수소의 결합상태와 porosity를 측정하여 PSL의 발광기구를 규명하고자 노력하였다. 그 결과 PL peak는 1.8 eV 근처에서 보였으며, 그 강도는 5 K에서 얻은 GaAs의 PL 강도와 거의 같았다.

      • KCI등재

        인공심장판막을 가진 외래 환자에서 Warfarin에 의한 과도한 INR 상승의 치료 현황 평가

        박선영,정영미,이병구,손인자,서옥경 한국병원약사회 2002 병원약사회지 Vol.19 No.2

        Patients taking long-term oral anticoagulant therapy with warfarin require close monitoring to maintain their coagulation values within therapeutic range. But little has been published about the incidence of bleeding during warfarin therapy in Korea. Moreover, data on how patients experiencing asymptomatic elevations of INR being treated are scarce. We evaluated the incidence of bleeding, the method of management in case of excessive anticoagulation and their outcome in SNCH. Patients with mechanical heart valves who were being followed at anticoagulation clinic in SNUH were included in the study if they had been on warfarin for at least 6 months and had been at least one episode of INR value greater than 5. Patients' data were evaluated retrospectively by reviewing medical records and anticoagulation flowsheets. Total of 173 episodes in 132 patients were included. One hundred fifty one cases were treated conservatively by holding warfarin temporariety whereas phytonadione or FFP was given in 22 cases. No difference in the bleeding rate was shown among treatment strategies. However, the treatment with phytonadione or FFP was 3 to 94 times more costly compared to conservative management. Based on the results of this study, phytonadione or FFP administration to asymptomatic patients with INR ranging from 5 to 10 may be unnecessary. A prospective, randomized trials would help confirming the safety and efficacy of conservative management compared to other treatment modalities and determining the INR range in which conservative management would be appropriate.

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