http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
터널 산화막 두께에 따른 Al2O3/Y2O3/SiO2 다층막의 메모리 특성 연구
정혜영,최유열,김형근,최두진 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.6
Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, Al2O3/Y2O3/SiO2 (AYO) multilayer structures using a high-k Y2O3 film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a Y2O3 layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the Y2O3 with 4 nm SiO2 tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to 104) due to the superior charge-trapping characteristics of Y2O3. We expect that these highk Y2O3 films can be candidates to replace Si3N4 films as the charge-trapping layer in SONOS-type flash memory devices.
터널 산화막 두께에 따른 Al<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> 다층막의 메모리 특성 연구
정혜영,최유열,김형근,최두진,Jung, Hye Young,Choi, Yoo Youl,Kim, Hyung Keun,Choi, Doo Jin 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.6
Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.
지르코늄 스폰지를 원료로 사용하여 화학증착법으로 제조된 탄화지르코늄 코팅층의 물성
김준규,최유열,이영우,박지연,최두진,Kim, Jun-Gyu,Choi, Yoo-Youl,Lee, Young-Woo,Park, Ji-Yeon,Choi, Doo-Jin 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.4
The SiC and ZrC are critical and essential materials in TRISO coated fuel particles since they act as protective layers against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. However, SiC and ZrC have critical disadvantage that SiC loses chemical integrity by thermal dissociation at high temperature and mechanical properties of ZrC are weaker than SiC. In order to complement these problems, we made new combinations of the coating layers that the ZrC layers composed of SiC. In this study, after Silicon carbide(SiC) were chemically vapor deposited on graphite substrate, Zirconium carbide(ZrC) were deposited on SiC/graphite substrate by using Zr reaction technology with Zr sponge materials. The different morphologies of sub-deposited SiC layers were correlated with microstructure, chemical composition and mechanical properties of deposited ZrC films. Relationships between deposition pressure and microstructure of deposited ZrC films were discussed. The deposited ZrC films on SiC of faceted structure with smaller grain size has better mechanical properties than deposited ZrC on another structure due to surface growth trend and microstructure of sub-deposited layer.