정보화 실태 및 정보사회 수용도 조사

최두진,Choe, Du-Jin 한국데이터베이스진흥원 1994 디지털콘텐츠 Vol.5 No.-

공업계 고등학교 기초전기이론 모의실험을 위한 컴퓨터 프로그램 개발에 관한 연구

최두진,김종석,박재웅 大田産業大學校 2002 한밭대학교 논문집 Vol.19 No.-

Currently we are facing a rapid developing age of information. Access to a wider than ever possible range of living information has been made possible to the swiftly expanding development of information communication technology. In accordance with this situation, the information-oriented education is gradually expanding in school. Also educational software has been lively developed to use directly in the class of technical high school. The purpose of this study is to complete and develop a Basic Electrical Virtual Lab System to practice basic electrical experiments. The students can easily understand the basic theories and rules by testing them using the system made by themselves. In this Basic Electrical Virtual Lab System it was able to complete the topics for the determination of the resistor value, resistor's connection, Kirchhoff's law, and to develop condensers connection, Ohm's law newly. The students get the same results just like in real experiments because the program is developed to simulate the real experiments. The virtual experiment site can be accessed easily by internet and an experiment is performed based on individual basis without restriction of location and time. This program can be used as fully the real experiment substitution or supplementary educational materials. In both case, it provides many benefits in education.

MTS를 사용한 LPCVD 법에 의한 (100)Si 위의 $\beta$-SiC 증착 및 계면특성

최두진,김준우 한국세라믹학회 1997 한국세라믹학회지 Vol.34 No.8

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

중후장대 조선업의 현재와 미래

최두진 대한용접·접합학회 2022 대한용접학회 특별강연 및 학술발표대회 개요집 Vol.2022 No.5

개화기 부산 근대학교 형성의 지역별 성격 연구

최두진 부산광역시사편찬위원회 2022 항도부산 Vol.44 No.-

The purpose of this study is to examine, how the modern schools in Busan during the enlightening period were affected and formed by region. Busan was a city centered on Dongnae(東萊) and Waegwan(倭館) before opening in 1876. In particular, Dongnae was a Yangban(兩班)-oriented society, and Waegwan was a place where Japanese people who traded with interpreters formed small villages. However, since the opening of the port, Japanese residents have expanded their residence in the Busan area, and due to political pressure, Protestant missionaries have also entered the Busan Port to do missionary work. Busan's modern education was formed by Yangban, pioneer, missionaries, and Japanese people, divided into Dongnae, Busanjin, Choryang, and Japanese residence (in Choryang). In Dongnae area, Dongmyeong School was established with a focus on Yangban society-based society. In the Busanjin area, Ilshin School was established by the Presbyterian Church in Australia. In the Choryang area, Kaesong School was established by Park Ki-jong, a pioneer interpreter. The Shim Sang Elementary School was established for Japanese people in the Waegwan area. In this way, modern schools in Busan during the enlightening period were formed according to regional specificity, local residents, and the establishment of the school. 본 연구는 개화기 부산의 근대학교가 어떤 과정 속에서 형성되었는지 지역별 성격에 대해 고찰하였다. 부산은 1876년 개항 이전까지는 동래와 왜관을 중심으로 형성된 도시였다. 동래는 양반 중심의 사회였고, 왜관은 통역관과 무역을 하는 일본인들이 작은 마을을 이루었던 곳이었다. 개항 이후 일본인들의 부산 지역 거주가 확대되었고, 개신교 선교사들도 부산항을 통해 들어와서 선교활동을 하였다. 부산의 근대교육은 이렇게 양반과 일본인, 선교사들에 의해 동래, 부산진, 초량지역으로 구분되어 형성되었다. 동래지역은 양반 사회 기반의 기영회를 중심으로 한 동명학교 즉 지금의 동래고등학교가 설립되었고, 부산진지역은 호주장로교에 의해 일신여학교가 설립되었으며, 초량지역은 통역관이었던 선각자인 박기종에 의해 개성학교가 설립되었으며, 또한 왜관지역 중심으로 일본인 자제를 위한 심상소학교가 설립되었다. 개화기 부산 지역의 근대학교 형성은 중앙의 법제에 의해 실행되었다기보다 부산 내의 지역적 특성에 따라 이루어졌다고 볼 수 있다. 부산 지역 내에서도 지형적 특수성이 당시 학교 형성에 작용하였고, 개항으로 인해 부산항과 경부선 건설로 인한 일본이라는 외국인 유입이 학교 설립에 크게 영향을 주었다. 부산의 근대학교 형성에는 각 지역별 계층 구성과 학교별 설립 주체에 따른 차이가 크게 작용하였다고 볼 수 있다.

다공성실리콘의 탄화를 이용한 PL의 열적안정성 증진

최두진,서영제,전희준,박홍이,이덕희 한국세라믹학회 1997 한국세라믹학회지 Vol.34 No.5

Porous silicon was prepared by an anodic etching. The pore size was about 10 nm at an etching time of 20 sec and a current density of 20 mA/$\textrm{cm}^2$. The porous layer was composed of an micro-porous layer (0.6 ${\mu}{\textrm}{m}$) and a macro-porous layer (10 ${\mu}{\textrm}{m}$). Room temperature PL with maximum peak 6700$\AA$ appeared. The peak disappeared by an oxidation reaction when the porous silicon was heated to 100~20$0^{\circ}C$ in atmosphere. In order to avoid the oxidation a heat treatment was done in H2 atmosphere. The micro-pore and Si column, which formed quantum well, were collapsed by the high temperature. The PL maximum peak of heated sample was gradually red-shifted and showed about 300$\AA$ red-shift at 50$0^{\circ}C$. The intensity of PL was maintained to high temperatures in lower pressures. The porous Si was carbonized in C2H2+H2 gas in order to increase thermal stability. The carbonization of the porous Si prevented red-shift of the maximum PL peak caused by sintering effect at high temperatures, and the carbonized porous Si showed Pl signal at higher temperatures by above 20$0^{\circ}C$ than the sample in H2 atmosphere.

미래교육을 위한 교육디자인

최두진 부산대학교 교육발전연구소 2018 교육혁신연구 Vol.28 No.1

연구목적: 오늘날 교육의 문제점과 4차 산업혁명과 관련하여 미래교육이 나아갈 방향에 대해 교육디자인의 측면에서 고찰해보는 것이 본 연구의 목적이다. 즉 첫째, 디자인 의미와 디자인 사고에 대해 분석하고, 둘째, 교육디자인 개념과 교육디자인 역량을 고찰한 후, 셋째, 교육디자이너 양성 프로그램 개발의 단초를 얻는데 그 목적이 있다. 연구방법: 문헌연구를 바탕으로 연구를 진행하였다. 기존의 디자인 개념을 바탕으로 교육디자인의 의미를 고찰하였고, 교육디자인을 위해 필요한 역량을 제시하였다. 연구결과: 교육디자인은 아이들이 즐겁게 공부하고 교육의 효율을 높일 수 있게 융복합적 사고와 창의성을 바탕으로 교육시스템을 디자인하고 실천하는 것으로 볼 수 있다. 이를 위해 갖추어야 할 교육디자인 역량은 다음과 같다. 첫째, 미래예측 할 수 있는 역량을 갖추어야 한다. 과학적 관점과 인문학적 사고를 바탕으로 미래사회 변화의 흐름과 그에 따른 교육체제 변화의 방향을 예견하는 미래지향적 인재를 양성하는 것이다. 둘째, 교육현장을 진단할 수 있는 역량이다. 우리 교육의 실상에 대한 체계적인 진단과 분석을 통해 심층적인 이해를 추구하는 현장 지향적 인재를 양성하는 것이다. 셋째, 문화 및 감성의 역량을 길러야 한다. 문화와 미디어의 다양성을 수용하고 변화에 유연하게 대처하는 문화, 예술, 감성을 갖춘 인재를 양성하는 것이다. 교육디자이너는 컴퓨터가 행하기 힘든 감성적이고 직관적인 역량을 갖추어야 한다. 넷째, 창조적 교육디자인의 역량을 개발해야 한다. 융․복합적 사고와 창의성을 바탕으로 미래의 바람직한 교육상과 현행 교육체제의 간극을 극복할 수 있는 교육시스템을 디자인하고 실천하는 창조적 인재를 양성하는 것이다. 다섯째, 글로벌 역량을 갖추어야 한다. 교육선진국 및 국제교육기구와의 협력적 네트워크를 바탕으로 우리의 교육적 경험을 개발도상국 및 저개발국가에 보급 및 공유할 수 있는 글로벌 인재를 양성하는 것이다. 결론: ‘미래지향적 교육디 자인’은 미래교육을 창출하는 통섭형 교육디자인이어야 할 것이다. 개인-기관-지역-국가 수준의 교육활동을 총괄적으로 기획하는 교육디자인 활동 모색이 필요하다. 교육디자인은 현 교육 체제의 당면문제를 즉각적으로 해결하려고 하는 소극적 수동적 접근이 아니라 미래 사회의 변화에 적합한 교육체제를 설계하는 적극적 능동적 접근이어야 할 것이다. Purpose: This study examined the educational design from the perspective of future education in relation to the fourth industrial revolution. Method: Based on the literature review, first, analyzing of design value, design meaning and design thinking. Second, Reviewing of educational design meaning and educational design competency. Finally, getting the basic foundation of program development for educating dynamic educational designer. Results: A educational design can be seen as designing and practicing educational system based on combined thinking and creativity so that children can study happily and improve the efficiency of education. To do this, following educational design capabilities are required. First, it is strengthening future prediction capability. Based on scientific perspectives and humanistic thinking, it is aimed to cultivate future-oriented talents that anticipate the direction of future social change and the educational system change accordingly. Second, deepening the educational field diagnostic capability. It is to nurture field-oriented talents that pursue in-depth understanding through systematic diagnosis and analysis of the reality of our education. Third, strengthening cultural and emotional competence. Cultivate talented people with cultural, artistic and emotional capacities that accept cultural and media diversity and respond flexibly to change. Fourth, development of creative education design capability. It is to nurture creative talents that design and practice an educational system that can overcome the gap between the desirable education system of the future and the current education system based on fusion and complex thinking and creativity. Fifth, global capacity building. Based on a collaborative network with educational advanced countries and international educational institutions, we will cultivate global talents that can disseminate and share our educational experiences in developing and underdeveloped countries. Conclusion: Future-oriented education design should be sought in order that may collectively plan educational activities at individual, institutional, regional and national levels. Educational design should not be a passive approach to solve the immediate problems of the current education system but should be a proactive and creative approach to design educational system and activities suitable for the change of future society.

Study of CVD SiC deposition for TRISO coated fuel material fabrication by computational simulation and actual experiment

최두진,김준규,E-Sul Kum,Sung Soon Kim,Hong Lim Lee,Young Woo Lee,Ji Yeon Park 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.6

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation results were in good agreement with the experimental results. The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation results were in good agreement with the experimental results.

Electrical characteristics of Al2O3/Ta2O5/SiO2 multi-layer films using various tunnel oxide thicknesses at different annealing temperatures

최두진 한양대학교 세라믹연구소 2010 Journal of Ceramic Processing Research Vol.11 No.6

A study of growth properties of SiC whiskers at various temperatures and input gas ratios on different Si substrates

최두진,Dong Chan Lim 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.2

In this study, SiC whiskers and films were grown on Si substrates with a carbon buffer layer. No metallic catalyst was used that might act as an impurity or a barrier on the tip of the whisker. The deposition temperature was varied between 1000oC and 1100oC, and the input gas ratio, α [H2/MTS] was set at 30, 40, and 50. We used bare Si and surface polished Si (SiC abrasive paper) as substrates to simulate different surface conditions. Growth properties that were examined by SEM and TEM depended on the temperature and the input gas ratio. The chemical compositions of deposits were investigated using XPS.