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Reduction of wafer bow in free standing GaN grown by HVPE
손호기,김진호,이미재,임태영,오해곤,김진훈,최영준,이혜용,심광보,황종희 한양대학교 세라믹연구소 2014 Journal of Ceramic Processing Research Vol.15 No.2
In this study, GaN layers on sapphire were grown by hydride vapor phase epitaxy (HVPE). And free standing (FS) GaN layers were obtained after laser lift off (LLO) process. We controlled growth temperature to minimized bow of the FS-GaN after LLO process. Target thickness of GaN epilayers were over 300 µm. GaN templates showed strong convex bowing at room temperature and the bow values showed any particular relation with growth temperature. But bows of FS-GaN substrates after LLO treatment showed mainly concave mode and those decreased according to reducing the growth temperature from 1010℃ to 1000℃ We show that reduction of bows in FS-GaN can be controlled by the growth condition of HVPE process.
손호기,김진원,임태영,이미재,김진호,전대우,황종희,오해곤,최영준,이혜용,Son, Hoki,Gim, Jinwon,Lim, Tea-Young,Lee, Mijai,Kim, Jin-Ho,Jeon, Dae-Woo,Hwang, Jonghee,Oh, Hae-Kon,Choi, YoungJun,Lee, Hae-Yong 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.11
In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.
HVPE법에 의해 성장된 AlN 에피층의 V/III비에 따른 특성변화
손호기,임태영,이미재,김진호,김영희,황종희,오해곤,최영준,이혜용,김형순,Son, Hoki,Lim, Tae-Young,Lee, Mijai,Kim, Jin-Ho,Kim, Younghee,Hwang, Jonghee,Oh, Hae-Kon,Choi, YoungJun,Lee, Hae-Yong,Kim, Hyung Sun 한국재료학회 2013 한국재료학회지 Vol.23 No.12
AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.
Freestanding GaN 기판의 Ga-polar 면에 기계적 연마 방법을 적용한 Bow 제어 및 그 특성 연구
김진원,손호기,임태영,이미재,김진호,전대우,황종희,정정영,오해곤,김진훈,최영준,이혜용,윤대호,Gim, Jinwon,Son, Hoki,Lim, Tae-Young,Lee, Mijai,Kim, Jin-Ho,Jeon, Dae-Woo,Hwang, Jonghee,Jung, Jung-Young,Oh, Hae-Kon,Kim, Jin-Hun,Choi, YoungJun,Le 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.12
In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.