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Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성
신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),이상열 ( S . Y . Lee ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),문종대 ( J . D . Moon ),신현길 ( H . K . Shin ),김택성 ( T . S . Kim ),송정훈 ( J . H . Song ),유기수 ( K . S . R 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N₂ gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 A and 7.014 A, respectively. Its grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
정태수,유평열,신영진,신현길,김택성,정철훈,이훈,신영신,홍관준,유기수 ( T . S . Jeong,P . Y . Yu,Y . J . Shin,H . K . Shin,T . S . Kim,C . H . Jeong,H . Lee,Y . S . Shin,K . J . Hong,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o, obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was ∼10^(23) m^(-3) and the mobility was 2.93X10^(-2) ㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^½ from 33 K to 150 K and a decreasing tendency in proportion to T^(-2) from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.
정태수,김현숙,유평렬,신영진,신현길,김택성,정철훈,이훈,신영신,강신국,정경수,홍광준,Jeong, T. S.,Kim, H. S.,Yu, P. Y.,Shin, Y. J.,Shin, H. K.,Kim, T. S.,Jeong, C. H.,Lee, H.,SHin, Y. S.,Kang, S. K.,Jeong, K. S.,Hong, K. J. 한국결정성장학회 1993 韓國結晶成長學會誌 Vol.3 No.2
수직 2단 전기로를 제작하고 결정성장관에 꼬리관을 연결하여 seed 결정없이 승화 방법으로 CdS 결정을 성장하였다. 이때 시료부분과 성장부분의 온도차 ${\Delta}T$가 이론적인 값 $14.7^{\circ}C$와 비교해서 실험적으로 얻은 값이 $15^{\circ}C$ 로 아주 일치하는 값을 나타내었다. 이때 꼬리관의 온도를 $110^{\circ}C$로 시간당 0.38mm 정도로 빨리 결정성장관을 끌어 올려 결정을 성장하였다. 분말법의 X-선 회절무늬와 Laue 배면 반사법의 Laue 무늬로부터 성장된 결정이 육방정이고 결정성장관의 길이 방향으로 c축을 갖는 단결정임을 확인하였다. 또한 CdS 단결정은 상온에서 전자 이동도와 운반자 밀도는 각각 $316cm^2/V{\cdot}sec$와 $2.90{\times}10^{16}cm^{-3}$정도이였다. We has made 2-zone vertical electric furnace and has been grown CdS single crystal by sublimation method in crystal growth tube with tail tube without seed crystal for growth. While it has been growing, temperature difference ${\Delta}T$ of source and growth part has nearly agreed with theoritical value $14.7^{\circ}C$and experimental value $15^{\circ}C$ Then, crystal of best quality has been grown, when temperature of tail tube has been $110^{\circ}C$, in spite of quickly pulling up crystal growth tube a degree O.38mm per hour. The grown crystal have had hexagonal structure and single crystal with c-axis to length of crystal growth tube from X- ray diffraction pattern of powder method and Laue pattern of back reflection Laue method. Also, the mobility and carrier density from Hall effect measurement have been $316cm^2/V{\cdot}sec$ and $2.90{\times}10^{16}cm^{-3}$ at the room temperature, respectively.
CBD 방법에 의한 CdS1-xSex 박막의 열처리에 따른 광전기적 특성
문종대,정태수,신현길,김택성,신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),최승평 ( S . P . Choi ),이상열 ( S. Y . Lee ),신용진 ( Y . J . Shin ),이관교 ( K . K . Lee ),김혜숙 ( H . S . Kim ),윤 한국센서학회 1995 센서학회지 Vol.4 No.1
Polycrystalline CdS_(1-x)Se_x, thin films were grown on ceramic substrate using a chemical bath deposition method. They ere annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS_(1-x)Se_x, polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS. CdSe samples annealed in gas at a 0 it was found hexagonal structure which had the lattice constant a_0=-4.1364Å, c_0=6.7129Å in CdS and a_0=4.3021Å, c_0=7.3021Å in CdSe. respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(γ), maximum allowable power dissipation and response time on these samples.
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 ( K . J . Hong,S . Y . Lee,S . H . You,S . S . Suh,J . D . Moon,Y . J . Shin,T . S . Jeoung,H . K . Shin,T . S . Kim,J . H . Song,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N₂ gas at 5500 it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7129 Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
$Cd_{1-x}Zn_{x}S$ 박막의 성장과 광전도 특성
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김태성,문종대,이충일,전승룡,Lee, S.Y.,Hong, K.J.,You, S.H.,Shin, Y.J.,Lee, K.K.,Suh, S.S.,Kim, H.S.,Yun, E.H.,Kim, S.U.,Park, H.S.,Shin, Y.J.,Jeong, T.S.,Shin, 한국센서학회 1995 센서학회지 Vol.4 No.3
Chemical bath deposition(C.B.D.)방법으로 다결정 $Cd_{1-x}Zn_{x}S$ 박막을 스라이드 유리(coming-2948) 기판위에 성장시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $550^{\circ}C$로 $N_{2}$ 속에서 열처리한 시료의 X-선 회절무늬로부터 외삽법으로 구한 격자상수는 CdS인 경우 $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$였으며 ZnS인 경우는 $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼응답 감도, 최대허용소비전력 및 응답시간을 측정하였다. Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.
유상하,홍광준,이상렬,신용진,이관교,서상석,김승욱,정준우,신영진,정태수,신현길,김택성,문종대,You S.H.,Hong K.J.,Lee S.Y.,Shin Y.J.,Lee K.K.,Suh S.S.,Kim S.U.,Jeong J.W.,Shin Y.J.,Jeong T.S.,Shin B.K.,Kim T.S.,Moon J.D. 한국결정학회 1997 韓國結晶學會誌 Vol.8 No.1
[ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$과 ${\Delta}so$는 각각 0.046, 0.014 eV였다. [ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.
HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성
홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진,정태수,김택성,문종대,김혜숙 ( K . J . Hong,K . K . Lee,S . Y . Lee,S . H . You,Y . J . Shin,S . S . Suh,J . W . Jeong,K . A . Jeong,Y . J . Shin,T . S . Jeong,T . S . Kim,J . D 한국센서학회 1997 센서학회지 Vol.6 No.4
The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600? and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively