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음극 아크 이온플레이팅법에 의한 박막상의 Microdroplets에 관한 연구
백영남,정창준 慶熙大學校 材料科學技術硏究所 1998 材料科學技術硏究論集 Vol.11 No.-
To measure the mechanical properties of titanium nitride films, on the silicon wafers, TiN films were coated by cathode arc ion plating(CAIP) method. The silicon wafers were selected for the calculation of the growing structure, microdroplets and roughnesses of titanium nitride films. The experimental variables were the substrate bias voltages, arc currents, distances between the target and substrate, and jig rpm. The morphologies of TiN films that surveyed by SEM. The creation of the microdroplet reduced with respect to the increase of the bias voltages, jig rpm and distances between the target and substrate, but the microdroplets were multiplied when the arc currents increased. The surface roughness of TiN films were under the influence of the droplets, and improved with increasing the bias voltages and distance between the target and substate, but the roughness became rough as the arc currents were increased.
스핀 스프레이 법으로 제조한 망가나이트 박막의 전기적 특성
전창준,정영훈,윤지선,박운익,백종후,홍연우,조정호,Jeon, Chang Jun,Jeong, Young Hun,Yun, Ji Sun,Park, Woon Ik,Paik, Jong Hoo,Hong, Youn Woo,Cho, Jeong Ho 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.1
Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the $Mn^{3+}/Mn^{4+}$. Typically, the resistivity of $70.5{\Omega}{\cdot}cm$ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at $450^{\circ}C$ for 3 h.
전창준,황하나,정영훈,윤지선,남중희,조정호,백종후,임종봉,남산,김응수 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.9
0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films wereprepared by using a tape casting method to develop new materials with high energy-density applicableto energy-harvesting devices. The piezoelectric strain constant (d33), dielectric constant("T33/"0), piezoelectric voltage constant (g33) and transduction coefficient (d33·g33) of the films wereaffected by the sintering temperature. These results could be attributed to the crystal structure,microstructures and secondary phases. However, the dielectric loss (tan) of the films was notchanged remarkably with increasing sintering temperature. Typically, a d33 of 452 pC/N, εT33/ε0 of 1444, d33·g33 of 20,340 × 10−15 m2/N and tanδ of 0.15% were obtained for the films sintered at 1050 ℃ for 1 h. The power generation performance of the piezoelectric unimorph cantilever wasassessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also,theoretical models were employed to predict the resonance frequency of the unimorph cantilevergenerator, and the predicted values were compared with experimental data.
0.85NaNbO3-0.15LiNbO3 세라믹스의 구조 및 전기적 특성
전창준 ( Chang Jun Jeon ),정영훈 ( Young Hun Jeong ),윤지선 ( Ji Sun Yun ),남중희 ( Joong Hee Nam ),백종후 ( Jong Hoo Paik ),조정호 ( Jeong Ho Cho ) 한국센서학회 2014 센서학회지 Vol.23 No.2
Structure and electrical properties of 0.85NaNbO3-0.15LiNbO3 ((Li0.15Na0.85)NbO3) ceramics were investigated as a function of sintering temperature. (Li0.15Na0.85)NbO3 ceramics were prepared by conventional solid state processing. A main phase of the orthorhombic perovskite structure and secondary phase of LiNbO3 were confirmed for all sintered specimens. Dense (Li0.15Na0.85)NbO3 ceramics were obtained at sintering temperature above 1050oC. With increasing sintering temperature, the electromechanical coupling factor (kp), piezoelectric constant (d33) and relative dielectric constant (εr) of the sintered specimens increased, while the mechanical quality factor (Qm) decreased. These results are due to the increase of grain size and crystallite size of orthorhombic perovskite structure. Based on the temperature dependence of εr, stable piezoelectric properties were expected because no phase transition found up to 300oC. Typically, kp of 18%, d33 of 34.7 pC/N, εr of 135, and Qm of 62.8 were obtained for the specimens sintered at 1200oC for 5 h.
마이크로볼로미터 응용을 위한 스핀 스프레이로 증착된 스피넬 박막
전창준,이귀웅,레득탕,정영훈,윤지선,백종후,조정호,Jeon, Chang Jun,Lee, Kui Woong,Le, Duc Thang,Jeong, Young Hun,Yun, Ji Sun,Paik, Jong Hoo,Cho, Jeong Ho 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.12
Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.
이귀웅,전창준,정영훈,윤지선,조정호,백종후,윤종원,Lee, Kui Woong,Jeon, Chang Jun,Jeong, Young Hun,Yun, Ji Sun,Cho, Jeong Ho,Paik, Jong Hoo,Yoon, Jong-Won 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.12
$[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.