태권도 앞굽이 몸통반대지르기를 통한 고령자의 건각도의 유효성 분석

김기만(Ki Man Kim),배영상(Young Sang Bae) 한국발육발달학회 2009 한국발육발달학회지 Vol.17 No.4

The purpose of this study was to identify effectiveness of Taekwondo Apkubi Momtong Bandae Jireugi (AMBJ) as diagnostic method of health related to muscle level of older men. To accomplish the purpose, relationship between a 3 stride of AMBJ distance and a cross section area of psoas major muscle were analyze. By using random sampling, 10 older men were sampled as subject who participate Gate-ball club in S-Gu, D-metropolitan city. Analysis of relation between the 3 stride of AMBJ and psoas major muscle scale recorded by MRI of older men were executed. Results of the analysis could be summarized as the following. 1) In the case of older men, the male who has much muscle weight and large thigh girth has big cross section area of psoas major muscle. 2) Relation among 3 stride of AMBJ, muscle weight(r=.822, p<.01), and thigh girth(r=.720, p<.05) especially, cross section area of psoas major muscle presented very high correlation(r=.91, p<.001). 3) Based on the analysis, measurement result of the 3 stride of Taekwondo Apkubi Momtong Bandae Jireugi was very effective diagnostic method to assume for health related to muscle strength level and all the muscular strength level of older men.

증산의 풍수관(風水觀) 고찰 - 『전경(典經)』을 중심으로 -

박상만,Park, Sang-man 대진대학교 대순사상학술원 2015 대순사상논총 Vol.25 No.2

Master Jeungsan understood a general view of Pungsu but actually he used the theory of Pungsu in his own religious perspective, transcending it. The theory of Pungsu is different. But the fact that it is premised on the principle of 'in and yang', the five-element principle, the Book of Changes, energy thought, and To chugi piyung, etc. is generally recognized. The three important elements of Pungsu are mountain, water, and direction or man. Pungsu has formal principles such as Gallyongbeop, Jangpungbeop, Deuksubeop, Jeonghyeolbeop, Jwahyangbeop, and Hyeongukron. etc. In the late of Joseon, Jeungsan established a new traditional thought, understanding Bibopungsu, Gukdopungsu, Minganpungsu, etc. However, he reinterpreted them to be suitable to his religious ideal and let his followers understand them as well. In particular, Jeungsan overcame the previous view on earth and expressed a new perspective to enhance earth up to the level of heaven. In the perspective of the traditional world, earth is lower than heaven, but Jeungsan made it a status equal to heaven. He mentioned that in the past, the culture and history of man was influenced by earth's energy but today, at the age of man respect, he put passive man influenced by earth-condition on the more subjective and active status. Even though he mentioned different Pungsu, Hyeongguk, and Hyeolmyeong, he expressed the shape of Pungsu within the construction of three worlds, the one of heaven and earth transcending good or ill luck or a favorable change in fortune. He practised the expedient of Pungsu from the stand of the construction of heaven and earth instead of the usage of Bibopungsu, Gukdopungsu, and Minganpungsu. He diagnosed that the division of the world is caused by the one of earth and tried to solve it. Moreover, he said that Myeongdang(a propitious site) must be the man-orientation rather than the earth-orientation. It means that Pungsu, stressing the energy of earth and turning one's luck, is changing into the world of man-orientation. In other words, Jeungsan diagnosed the world of Pungsu but he ultimately used Pungsu theory in building up his own view of religious world transcending such a theory.

半導體素子의 高周波特性 向上策 樹立을 위한 새로운 電界效果 트랜지스터의 開發에 관한 硏究

成萬永 단국대학교 1982 論文集 Vol.16 No.-

A technique has been proposed for fabricating a submicronchannel Vertical V-groove field effect transistor (V-groove FET) using silicon batch processing techniques and standard photolithgraphy. The short channel length of this device is expected to make it useful for microwave applications as well as for high speed integrated circuits. The fabrication procedure is easily modified for use with compound semiconductors to take advantage of the higher mobilities and greater carrier velocities available in other materials. The fabrication procedure makes use of an anisotropically etched V-groove into a (100)p type silicon region grown on an n-silicon substrate to delineate the source of the Junction type V-groove FET. The V-groove etch is designed to be selfterminating when the distance from the bottom of the groove to the pn junction interface reaches a specified submicron value. The distance will be the channel length of the completed junction type V-groove FET. A subsequent donor diffusion into the surface of the etched groove creates the n-type channel between the source and the substrate. Metal contact at the surface of the p-region serves as the gate terminal while contacts at the V-groove surface and the substrate form the source and drain terminals, respectively. A finite-element numerical simulation of the junction type V-groove FET operation was performed using a FORTRAN program run on a Cyber-174 computer. The program alternaly solves Poisson's equation and the electron and hole continuity equations over the region of interest with mixed Dirichlet and Neumann boundary conditions until a steady-state solution is reached Low-frequecny output characteristics of the device were deduced by varying the gate and drain voltage boundary conditions over many program runs. A technique was proposed for fabricating the p n V-groove JEFT structure. This technique would utilize an anisotropic etch through a p-region into the n-substrate followed by an n-type epitaxial regrowth step in the faces of the V-groove to create the V-groove FET channel. The numerical simulation predicts a higher transconductance for this structure. The lack of adequate epitaxial facilities precluded the fabrication and evaluation of such a structure. As the results of the experimental fabrication, the microwave V-groove FETs are obtained. The cut off frequencies are calculated to be 56㎓ by Linvill's power gain equation using the measured capacitance and transconductance.

전력 MOSFET의 설계에 관한 연구

성만영,최연익 亞洲大學校 1985 論文集 Vol.8 No.-

Optimum design of power MOSFET's has been studied for minimum ON resistance. With the breakdown voltage given, design curves were made to determine thickness and doping concentration of the epitaxial layer for minimum epi resistance. Sensitivity of epi resistance to epi resistivity were studied in practical sense. Concentration of the channel region was calculated for the threshold voltage and gate oxide thickness. From gate-drain overlap ratio at the minimum ON resistance, optimum dimension of s and a was obtained for linear and cell geometry, respectively. A power MOSFET with the breakdown voltage of 350V was designed successfully according to the above-mentioned design procedures.

Chinese hamster 난소세포에서 수용성 니켈에 의해 특징적으로 발현되는 유전인자들의 빠른 분석에 관한 연구

성근제,이상한,우기민,송호연,조만희 순천향의학연구소 2001 Journal of Soonchunhyang Medical Science Vol.7 No.2

니켈에 의한 암 발생기전 및 세포 독성기전을 이해하고 니켈에 의해 발현에 변화를 보이는 유전자들을 검출하기 위하여 니켈이 포함된 배지에서 배양된 Chinese hamster난소 세포부터 mRNA differential display 분석을 시행하였다. 본 연구에서는 동위원소나 DNA염기서열 분석용 젤을 사용하는 기존의 방법 대신에 훨씬 빠르고, 다루기 쉽고 안전성을 지닌 변형된 기법을 개발하여 적용하였다. 니켈에 의해 발현에 변화를 보이는 cDNA fragments들을 10% polyacrylamide mini젤상에서 분리 및 클로닝한 다음, DNA염기 서열 분석과 GenBank Blast search 프로그램을 이용하여 상동성 조사를 하였다. Reverse Northern blot을 이용하여 발현에 변화가 있는 cDNA들을 재확인한 결과, 검사된 19 cDNAs 들중 총 9종에서 발현의 변화를 보였으며, 이 중 3종은 니켈에 반응하여 발현에 증가를 보였고, 반면에 6종은 발현이 감소하였다.

편측안면경련 환자에서의 임상적 중증도를 평가하기 위한 전기생리학적 연구

전성만,김종국,정재익,차재관,김상호,김재우 대한신경과학회 1998 대한신경과학회지 Vol.16 No.2

Westergren법의 KRC변법에 의한 ESR 측정법의 검토

최성만,김재식,김중명 대한병리학회 1983 Journal of Pathology and Translational Medicine Vol.17 No.4

Studies on the Effects of Biomedicinal Agents on Serum Concentration of Ca2+ , P and ALP Activity in Osteoporosis-Induced Rats

Sang-keun Kim,Myung-hun Lee,Man-hee Rhee 대한수의학회 2003 Journal of Veterinary Science Vol.4 No.2

on the Effects of Biomedicinal Agents on Serum Concentration of Ca2+, P andALP Activity in Osteoporosis-Induced RatsSang-keun Kim, Myung-hun Lee1 and Man-hee Rhee2College of Veterinary Medicine, Chungnam National University, 220 Gungdong, Yusong-Gu, Daejeon 305-764, Korea1National Veterinary Research and Quarantine Service, Anyang 430-824, Korea2College of Veterinary Medicine, Kyungpook National University, Daegu 702-701, KoreaReceived April 3, 2003 / Accepted July 9, 2003J. Vet. Sci. (2003), 4(2), 151-154JOURNAL OFVeterinaryScience*Corresponding author: Sang-keun Kim Dept. of Vet. Med., Chungnam National University, Daejeon 305764, Korea Tel: +82-42-821-6754, Fax: +82-42-821-6754 E.-mail: kskkim@cnu.ac.kr

두개강내 정맥기형들과 동반된 안와내 해면상 혈관종 1례

조도상,송준혁,김명현,박향권,김성학,신규만,박동빈 대한신경외과학회 1998 Journal of Korean neurosurgical society Vol.27 No.6

InSb化合物 半導體에 있어서의 諸效果와 그 活用性에 관한 硏究 : 高周波效果를 中心으로

成萬永 단국대학교 1984 論文集 Vol.18 No.-

This paper describes studies on various fundamental effects related to the magnetoresistive effects in InSb, of which electron mobility is known to be the highest in semiconductors. The main purpose of this paper is to contribute to a better understanding of the characteristics of the magnetoresistive devices from an engineering point of view, and then promote the development of their new application fields. The magnetoresistive effect is an effect in which a semiconductor element changes its electric resistance when a magnetic field is applied to it. The resistance change between to current electrodes is attributed to the change in the current flow in the element and the change in the resistivity. The former is a phenomenological effect and is called the geometrical effect, since it is great influenced by the geometrical configuration of the element. The latter is a magnetic field dependence of the resistivity and is called the magnetoresistivity effect or the physical magnetoresistance. In this paper, the magnetoresistive effects at a high frequency are described. Theoretical calculation has been made on high frequency transport properties of InSb under a d.c. magnetic field, leading to a conclusion that the relative increase of microwave loss in InSb under a magnetic field, γ_1 is given by γ_0{1+ω(τ_e+τ_h)}, where γ_0 is the relative resistivity increase Δρ/ρ_0 under a d.c. magnetic field with d.c. current, and γ_e and γ_h are the relaxation time for electrons and that of holes respectively. Measurements were made on the microwave power loss at 34㎓ at room temperature under magnetic fields up to 1.5 Telsa. The experimental results show an appreciable influence of ωτ on the loss even at room temperature as predicted by the theory. The influence of the surface roughness and geometry at 34㎓ has also been investigated experimentally. It has been found that these effects play an important role in high frequency properties in InSb under a magnetic field.