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Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
Chemical bath deposition 방법으로 다결정 CdSe 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 450℃로 열처리한 시료가 X-선 회절무늬로 부터 외삽법에 의해 a_o와 c_o 는 각각 4.302 Å과 7.014 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.3㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 200 K 까지는 압전산란에 의하여, 200 k 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdSe thin films were grown on creamic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N_2 gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 Å and 7.014 Å, respectively. It grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical potical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivily (γ), maximum allowable power dissipation and response time on these samples.
황광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
Chemical bath deposition 방법으로 다결정 CdS 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. 550℃로 열처리한 시료의 경우 X-선 회절무늬로 부터 외삽법에 의해 a_。와 c_。는 각각 4.1364 Å과 6.7129 Å인 육방정계임을 알았다. 이 때 낱알크기는 약 0.35㎛이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K 에서 150 K 까지는 압전산란에 의하여, 150 K 에서 293 K 까지는 극성광학산란에 의하여 감소하는 경향이 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(γ), 최대허용소비전력 및 응답 시간을 측정하였다. Polycrystalline CdS thin films were grown on creamic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N_2 gas at 550℃ it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7120Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
HWE(Hot Wall Epitaxy)에 의한 ZnIn_2S_4 박막 성장과 광전도 특성
홍광준,이관교,정준우,정경아,방진주,장현규,문종대,김혜숙 조선대학교 기초과학연구소 1999 自然科學硏究 Vol.22 No.1
HWE 방법에 의해 ZnIn_2S_4 박막을 Si(00) 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 610℃, 450℃로 하여 성장시킨 ZnIn_2S_4 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 245 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 1n n 대 1/T에서 구한 활성화에너지는 0.17eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 100K까지는 불순물산란에 기인하고, 100K에서 293K까지는 격자산란에 기인한것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. S 증기분위기에서 열처리한 광전도 셀의 경우, 감도(??)는 0.99, pc/dc은 1.37x10^7, 그리고 최대 허용소비전력(MAPD)은 336mW, 오름시간(rise time)은 9ms, 내림시간(decay time)은 9.8ms로 가장 좋은 광전도 특성을 얻었다. The ZnIn_2S_4 thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are 610℃ and 450℃ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 100K by impurity scattering and decreased in the temperature range 100K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(??), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapor compare with in Zn, In, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.37x10^7, the MAPD of 336mW, and the rise and decay time of 9ms and 9.8ms, respectively.
김용완,김병수,김성천,김준연,이채언,전진호,문덕환,배기택 인제대학교 1985 仁濟醫學 Vol.6 No.4
해외근로자 1,250명에 대한 재해원인(미국 표준연구소와 국제노동기구의 분류법에 의함)을 조사 분석하여 산업재해 예방 대책의 기초 자료를 얻고자 한 것이다. In order to obtain basic reference materiols for the estabishment of effective industrial safety programmes in oversea workers, accident causes were investigated among 1,250 injured workers, The data were analized according to the USA Standards Institute and International Labour Organization method. The results were as follows: 1.The most prevailing injuries were fractures, contusions, strains, cuts, lacerations and punctures, which were 72% of the total 1,250 cases of occupational injuries. 2.The parts of body most frequently injured were spines, upper extremities (including fingers), head and lower extremities. 3.The most responsible source of injuries were building construction, transport and power machine equipments. 4.According to the accident type, fall from elevation, over exertion, caught-in, struck-by and fall on same level were most frequently observed which were 70% of the total number of injuries. 5.According to the unsafe acts, carelessness and unsafety information were most frequently observed which were 80% of the total number of injuries. 6.Unsafety acts were mot responsiable causes of injuries, accounting for 49%. The major hazardous conditions in or about causes were approach of hazardous sites handling of hazadous matrials and carelessness of work motion. 7.Practically all oversea workers accident records could produce the causes of accident which fell into the categories. The moat hazadous conditions were unsafety acts and building construction materials were the most responsible sources of injuries. 8.There were close associations between the nature of injuries and injured body parts, the types and of causes injuries, unsafety acts and kinds of work among injured workers.
The Magnetic Properties of Rapidly Quenched Yttrium - Palladium - Borocarbides Ribbon
K. S. Kim,S. C. Yu,Y. M. Moon,J. S. Baek,W. Y. Lim 한국자기학회 1996 Journal of Magnetics Vol.1 No.1
We have studied the superconductivity of rapidly quenched YPd₂B₂C ribbons. The superconductivity in bulk YPd₂B₂C is completely suppressed by annealing as-cast ingots at higher temperatures, suggesting that the superconducting phase is metastable. The rapidly quenched sample, in the as-quenched state, shows the superconducting transition temperature of about 21 K. From our magnetic data, the value for the upper critical field H_(c2) (0) is estimated to be 10 T. The critical current density and the expected specific heat discontinuity (ΔC/γTc) were obtained to be about 10^8 A/㎡ at 10 Oe and 1.55, respectively.
엑시머 레이저를 이용한 산화 바나듐 박막의 상변화 유도에 관한 연구
김상곤,김도훈,이제훈,신동식,문성욱,강호관 한국레이저가공학회 2002 한국레이저가공학회지 Vol.5 No.3
단위 면적당 30W 근처의 값에서 가장 좋은 전기적 특성(상온 저항: 8kΩ, TCR: 2.9%)을 보였으며, 이는 기존의 2.5% 이하 TCR 값과 상온 저항 수십 kΩ 대의 재료에 비해 상당히 향상된 것으로 사료된다. 이런 향상의 원인은 레이저 어닐링 후, V_2O_3, VO_2 등의 혼합상 생성으로 인해 전기적 특성이 높아진 것으로 여겨진다. 표면 관찰 결과, 레이저 어닐링 전의 모습은 스퍼터링으로 인한 박막 증착 때문에 매우 거친 표면이었으나, 어닐링 후에는 보다 부드러운 표면의 모습을 보이고 있다. 이러한 표면의 거칠기 변화는 박막 전체의 저항 측정에 많은 영향을 끼쳤을 것으로 여겨진다. AES 분석 및 XPS 분석을 통하여 깊이에 따른 조성의 변화를 관찰한 결과, 비교적 안정적인 깊이 방향의 상변화를 얻을 수 있었으며, 표면만의 상변화가 아닌 처음에 증착된 박막 전체에 걸쳐 어닐링의 영향이 있었음을 알 수 있었다.