http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
조인숙,이해혁,김태희,이권해,남계현,이임순,김정식,박성진 순천향의학연구소 2004 Journal of Soonchunhyang Medical Science Vol.10 No.2
Pelvic inflammatory disease (PID) is a disease that affects young, sexually active, reproductive age women. Most pathogens are Chlamydia trachomatis and Neisseria Gonorrheae transmitted sexually. One of serious acute complication of PID is tubo-ovarian abscess (TOA) that involves the fallopian tube, ovary and adjacent structures (eg, bowel, pelvic peritoneum). The microbiology of TOAs is polymicrobial with anaerobic organisms and causal organisms of PID. Common anaerobic organisms are Peptostretococcus spp, Bacteriodes spp, Prevotella spp, Escherichia coli and aerobic streptococci. Treatment is necessary to admission for intravenous broad-spectrum antibiotics and surgery is often reserved for patients with suspected rupture or patients who fail to respond to antibiotics. So, we reported this case found pelvic abscess due to ruptured tube-ovarian abscess.
여호와의 증인 환자에서 산과적 출혈 후 무수혈 치료 2예
김재령,여소진,이해혁,김정식,김태희,남계현,이권해,이임순,박진화,황경호 순천향의학연구소 2004 Journal of Soonchunhyang Medical Science Vol.10 No.2
Jehovah's Witness comprise a unique obstetric population. Their refusal of blood stems from an interpretation of a literal translation of the Bible, and it is this belief that puts them at an increased risk of morbidity and mortality if hemorrhage occurs. We report two cases of a Jehovah's Witness who bled massively due to obstetric hemorrhage, refused blood transfusion and had profound anemia. The patients were treated with recombinant human erythropoietin, parenteral iron and oxygen. And they were treated on an intensive care unit with intermittent positive pressure ventilation. We reviewed with literature considering the therapy for acutely anemic patients who refuse transfusion to decrease the duration of the most severe anemia.
관동대학교 간호학과 현장실습교육 교과과정 개선을 위한 기초조사(Ⅱ)
成英熙,金福子,李成恩,任東湜 관동대학교 2000 關大論文集 Vol.28 No.2
The practical apprenticeship training is important and takes part in 19.5% of curriculum in university nursing education(Lee. 1997). The quality and quantity of prcatical training influences the quality of nursing student ability. This study has planed to find out the actual condition of practical apprenticeship training and develop the reform measures for nursing education of Kwandong University. The questionnaires were sent for the clinical instructors of one municipal hospital. two university hospitals in Seoul, public health centers and schools who were directly in charges of training for nursing students of Kwandong University. The results were as follow : 1. The mean age of the clinical educators was 37.6 years. The proportion who have bachelor degree was 57.7% and the mean experience of field teaching was 4.8% years and the mean carrier as a nurse was 14.5 years. 2. The actual hours of field teaching (7.1 hours) was higher then the ideal hours(6.6 hours) 3. The score of students attitude(3.8 point) was showed the highest score among the abilities of the nursing students for practical apprenticeship training. There were statistical differences in the scores of students attitude(F=12.7 p=0.000 ) and level of practice (F=4.96 p=0.01) among 3 training fields. 4. Nursing unit orientation was showed the highest coherence rats between the actual contents and the ideal contents for field teaching (difference in score was 0.05) To improve the actual condition of training apprenticeship for nursing education in Kwandong University several recommendations are necessary. For example to improve students ability in nursing terminological knowledge and bedside nursing skills. the accreditation system like checklist is helpful and the regular academic meetings will do important parts for the communication between nursing faculties in university and nursing staffs in nursing fields.
Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach
Im, Ki-Sik,Sindhuri, Vodapally,Jo, Young-Woo,Son, Dong-Hyeok,Lee, Jae-Hoon,Cristoloveanu, Sorin,Lee, Jung-Hee JAPAN SOCIETY OF APPLIED PHYSICS 2015 Applied physics express Vol.8 No.6
<P>An AlGaN/GaN-based Omega-shaped nanowire fin-shaped FET (FinFET) with a fin width of 50 nm was fabricated using tetramethylammonium hydroxide (TMAH)-based lateral wet etching. An atomic layer deposited (ALD) HfO2 side-wall layer served as the etching mask. ALD Al2O3 and TiN layers were used as the gate dielectric and gate metal, respectively. The Omega-shaped gate structure fully depletes the active fin body and almost completely separates the depleted fin from the underlying thick GaN buffer layer, resulting in superior device performance. The top-down processing proposed in this work provides a viable pathway towards gate-all-around devices for III-nitride semiconductors. (C) 2015 The Japan Society of Applied Physics</P>
Performance of AlGaN/GaN Nanowire Ω-Shaped-Gate Fin-Shaped Field-Effect Transistor
Lee, Dong-Gi,Sindhuri, V.,Jo, Young-Woo,Son, Dong-Hyeok,Kang, Hee-Sung,Lee, Jae-Hong,Lee, Jae-Hoon,Cristoloveanu, Sorin,Im, Ki-Sik,Lee, Jung-Hee American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
Im, Hyung-Jun,Hwang, Do Won,Lee, Han Kyu,Jang, Jaeho,Lee, Song,Youn, Hyewon,Jin, Yeona,Kim, Seung U,Kim, E Edmund,Kim, Yong Sik,Lee, Dong Soo MIT Press 2013 Molecular imaging Vol.12 No.4
<P>Transplantation of neural stem cells (NSCs) has been proposed as a treatment for Parkinson disease (PD). The aim of this study was to monitor the viability of transplanted NSCs expressing the enhanced luciferase gene in a mouse model of PD in vivo. The PD animal model was induced by unilateral injection of 6-hydroxydopamine (6-OHDA). The behavioral test using apomorphine-induced rotation and positron emission tomography with [18F]N-(3-fluoropropyl)-2'-carbomethoxy-3'-(4-iodophenyl)nortropane ([18F]FP-CIT) were conducted. HB1.F3 cells transduced with an enhanced firefly luciferase retroviral vector (F3-effLuc cells) were transplanted into the right striatum. In vivo bioluminescence imaging was repeated for 2 weeks. Four weeks after transplantation, [18F]FP-CIT PET and the rotation test were repeated. All 6-OHDA-injected mice showed markedly decreased [18F]FP-CIT uptake in the right striatum. Transplanted F3-effLuc cells were visualized on the right side of the brain in all mice by bioluminescence imaging. The bioluminescence intensity of the transplanted F3-effLuc cells gradually decreased until it was undetectable by 10 days. The behavioral test showed that stem cell transplantation attenuated the motor symptoms of PD. No significant change was found in [18F]FP-CIT imaging after cell transplantation. We successfully established an in vivo bioluminescence imaging system for the detection of transplanted NSCs in a mouse model of PD. NSC transplantation induced behavioral improvement in PD model mice.</P>
1/<i>f</i> noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer
Im, Ki-Sik,Choi, Jinseok,Hwang, Youngmin,An, Sung Jin,Roh, Jea-Seung,Kang, Seung-Hyeon,Lee, Jun-Hyeok,Lee, Jung-Hee Elsevier 2019 MICROELECTRONIC ENGINEERING Vol.215 No.-
<P><B>Abstract</B></P> <P>We investigate the DC and 1/<I>f</I> noise properties in Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N/GaN high-electron mobility transistors (HEMTs) with two types of 2 μm-thick periodically carbon-doped GaN buffer layer (PC-doped GaN buffer) with and without inserting the 30 nm-thick Al<SUB>0.05</SUB>Ga<SUB>0.95</SUB>N back barrier layer between the GaN channel layer and the PC-doped GaN buffer. The PC-doped GaN buffer layer consists of multiple layers of 12 nm-thick C-doped GaN layer with doping concentration of 1 × 10<SUP>18</SUP> cm<SUP>−3</SUP> and 50 nm-thick undoped GaN layer with unintentional n-typing concentration of 2 × 10<SUP>16</SUP> cm<SUP>−3</SUP>. A reference AlGaN/GaN HEMT with 2 μm-thick highly-resistive GaN buffer layer without C-doping is also fabricated for comparison. Similarly to the reference AlGaN/GaN HEMT, the AlGaN/GaN HEMTs with PC-doped GaN buffer show typical 1/<I>f</I> noise characteristics mainly due to the trapping effects at the AlGaN/GaN interface from subthreshold region to strong-accumulation region, which indicates that the deep trapping effects in the PC-doped GaN buffer layer is negligible, and experience the correlated mobility fluctuations (CMF), which is convinced from the drain current power spectral density (PSD) versus drain current. At off-state (deep-subthreshold region), on the other hand, the HEMTs with the PC-doped GaN buffer layer exhibit 1/<I>f</I> <SUP>2</SUP> noise characteristics, which are closely related to the generation-recombination (g-r) noise caused by the spatial trapping/detrapping process between the deep acceptor in the C-doped layer and the shallow donor in the undoped layer in the PC-doped GaN buffer, while the reference HEMT still shows typical 1/<I>f</I> noise characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Noise characteristics in AlGaN/GaN HEMTs with/without PC-doped buffer layer were investigated. </LI> <LI> PC-doped buffer layer consists of 12 nm-thick carbon-doped GaN and 50 nm-thick un-doped GaN. </LI> <LI> All devices exhibited 1/<I>f</I> noise properties and CMFs from subthreshold to strong-accumulation. </LI> <LI> At off-state, PC-doped buffer devices exhibited 1/<I>f</I> <SUP>2</SUP> noise properties at frequency > 40 Hz. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>