<P>An AlGaN/GaN-based Omega-shaped nanowire fin-shaped FET (FinFET) with a fin width of 50 nm was fabricated using tetramethylammonium hydroxide (TMAH)-based lateral wet etching. An atomic layer deposited (ALD) HfO2 side-wall layer served as the...
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https://www.riss.kr/link?id=A107653647
2015
-
SCOPUS,SCIE
학술저널
66501-66501(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>An AlGaN/GaN-based Omega-shaped nanowire fin-shaped FET (FinFET) with a fin width of 50 nm was fabricated using tetramethylammonium hydroxide (TMAH)-based lateral wet etching. An atomic layer deposited (ALD) HfO2 side-wall layer served as the...
<P>An AlGaN/GaN-based Omega-shaped nanowire fin-shaped FET (FinFET) with a fin width of 50 nm was fabricated using tetramethylammonium hydroxide (TMAH)-based lateral wet etching. An atomic layer deposited (ALD) HfO2 side-wall layer served as the etching mask. ALD Al2O3 and TiN layers were used as the gate dielectric and gate metal, respectively. The Omega-shaped gate structure fully depletes the active fin body and almost completely separates the depleted fin from the underlying thick GaN buffer layer, resulting in superior device performance. The top-down processing proposed in this work provides a viable pathway towards gate-all-around devices for III-nitride semiconductors. (C) 2015 The Japan Society of Applied Physics</P>
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