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Lamellar keratoplasty using position-guided surgical needle and M-mode optical coherence tomography
Shin, Sungwon,Bae, Jung Kweon,Ahn, Yujin,Kim, Hyeongeun,Choi, Geonho,Yoo, Young-Sik,Joo, Choun-Ki,Moon, Sucbei,Jung, Woonggyu SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS 2017 JOURNAL OF BIOMEDICAL OPTICS Vol.22 No.12
이건호(Geonho Lee),이진영(Jinyoung Lee),신형호(Hyeongho Shin) 전남대학교 어업기술연구소 2015 어업기술연구소보고지 Vol.8 No.1
본 연구는 저층 트롤어구의 끝 자루그물코에 대한 연구 방안의 하나로 소리도 남단 해역과 거문도 남단 해역에서 저층 트롤어망의 끝 자루그물에 외장망(cover net)을 부착하여 트롤 조업에 의한 어획 조사를 실시하였으며 얻어진 결과는 다음과 같다. 1차 조사는 소리도 남방해역을 중심으로 시험 조업을 행하였으며 어획된 어획물의 종조성은 전갱이, 장어, 히메치, 성대, 아귀 순으로 나타났으며 총 어획 어종은 20종이 어획되었다. 2차 조사에서는 제주도 북동 해역을 중심으로 시험 조업을 행하였으며 어획된 어획물의 우점종의 순위는 전갱이, 참돔, 두툽상어, 달고기, 갈전갱이, 한치, 달강어, 쏨뱅이 순으로 나타났으며 총 어획 어종은 17종이 어획되었다. 주어구의 끝 자루그물(그물코 60mm)에서 탈출된 어족생물은 1차에서 9종, 2차에서는 7종이 탈출되었으며, 탈출된 어종의 체장은 200mm 이하가 대부분으로 어족 자원의 보호를 위한 그물코의 규제가 반드시 필요하다는 것을 알 수 있었다. 앞으로 더욱 더 효과적인 시험연구를 위하여서는 어족생물의 체장은 물론 체고에 대한 조사도 필요함이 요구되어졌다. 어족생물의 탈출어에 대한 시각적인 판단에 의한 생존율은 예상되었던 것과는 다르게 거의 90% 이상의 생존율을 기록하여 실제 어획이 이루어지고 있는 현장에서는 아마도 거의 생존되어 탈출되리라고 생각되었다. The resources of fish are serious on account of fishing excessively without protection on small fish. The primary goal of this study is to survey fishing product of bottom trawl with cod-end and cover net to protect of small fish. The survey was conducted Dong Baek in the training ship of the Chonnam National University on 31th July and 5th November, 2014. The results are as follows, 1. The total fish specious caught by trawl net during the 2 times survey were 20 species at 1st survey and 17 species at 2nd survey respectively. A few species(superior species) of these occupied 70~90% of the quantity of total quantity by number. Among the superior species Trichiurus japonicus was recorded to be the most dominant species in the survey area. 2. The most body length of escape fish from the trawl net with cod-end was that of about 200mm on survey of 31th July and 5th November, 2014. 3. By optical estimation the survival rate of escape fish on this survey recorded over a ninety percent.
반건호,김종우,윤도준,유희정,신영우 大韓神經精神醫學會 1999 신경정신의학 Vol.38 No.2
연구목적 : 최근에 환자의 주관적 행복감과 삶의 질이 정신과 뿐만 아니라 일반 의학적인 치료효과 판정의 지표로 대두되고 있다. 본 연구는 정신분열병 환자에서 병식의 유무에 따른 삶의 질에 어떠한 차이가 있는지 알아보고, 그 임상적 의미와 치료전략에서의 유용성에 대해 고찰하고자 하였다. 방 법 : DSM-Ⅳ 진단 기준에 의한 55명의 정신분열병 입원환자를 대상으로 하였다. Amador등(1994)이 개발한 Scale for Unawareness of Mental Disorders(SUMD)를 이용, 병식이 있는 군(22명)과 병식이 없는 군(15)으로 나누었다. 각 군에서 Lehman(1988)이 개발한 Quality of Life Interview(QOLI)를 시행하여 병식 유무에 따른 차이를 검증하였다. 또한 Beck Depression Inventory(BDI)를 실시, QOLI의 주관적 척도 및 SUMD와의 상관관계를 분석하였다. 결 과 : 병식 유무에 따른 인구동태학적 지표 및 정신증상의 심각도에는 유의한 차이가 없었다. 객관적 삶의 질에서는 양 군간에 유의한 차이를 보이지 않았다. 주관적 삶의 질에서는, 병식이 있는 군에서 사회적 관계에 대한 만족도 영역에서 유의하게 낮은 수준을 보였다. (t=2.61, p〈.05), 또한 병식이 있는 군에서 통계적으로 유의하지는 않으나 주관적 척도의 총합과 안전에 대한 만족도 영역에서 낮은 경향을 나타냈다. BDI, SUMD, QOLI의 주관적 척도 사이에는 의미있는 부적 상관관계를 보였다. (p〈.05). 결 론 : 병식이 있는 정신분열병 환자에서 주관적으로 낮은 행복감을 보이며, 특히 대인관계에서의 만족도가 낮은 것으로 나타났다. 그 이유에 대해서는, 우울증상과의 관계가 시사되었으나 다른 요인들에 대한 향후 연구가 필요하다고 생각된다. 정신분열병 환자를 치료함에 있어 삶의 만족도에 관심을 갖고, 환자가 불만족스럽게 느끼는 부분을 중점적으로 지지해준다면 치료효과를 향상시킬 수 있을 것이다. Objectives : This study was designed to evaluated differences in the quality of life (QOL) according to insight in patients with schizophrenia. The author speculated that insight might have an effect on individual's QOL, especially subjective QOL. Method : The study group consisted of patients with schizophrenia(N=55). Subjects were divided into two group, patients with insight(N=22) and without insight(N=15), based on Scale of Unawareness of Mental Disorder(SUMD). All of the patients were administered the Quality of Life Interview(QOLI) by Lehman and compared in objective and subjective QOL between two groups. Additionally, they completed BDI and F scale on MMPI. Results : The patients with insight showed a tendency of lower scores in total subjective QOLI score and the safely issues compared to the patients without insight although not significant statistically. And they showed significantly less satisfaction with social relations. In objective QOL, there are no statistically significant difference between two groups. Conclusion : Such difference support the notion that schizophrenic patients with insight are less satisfied with their lives, especially in the aspect of interpersonal relations. It reflects the awareness of functional decline due to lifetime disability, disconnection from social relations, poor resources and supports, social stigma, and also depressive or anxiety symptoms. The authors propose that the treatment strategies for schizophrenia must include concern and support for domains of life with which patients feel themselves least satisfied, to increase effectiveness and efficacy of treatment and improve QOL.
Strength Prediction FEM Model Development of Welded Steel Joint
Hansol Kim,Geonho Lee,Seungcheol Shin,Hojin Yoo,Jungho Cho,Sang-Woo Han,Chulhong Rhie,Gwangmin Kim 한국정밀공학회 2022 International Journal of Precision Engineering and Vol.23 No.12
Several studies have been conducted to predict issues caused by the welding process. The finite element method is extremely useful in analysing this welding process. Generally, in the analysis of welded structures, the welded joint is assumed to be rigid to large structure on vehicle-body crash or fatigue. This assumption does not require a theoretical background of a complicated welding process; therefore, it is relatively easy to set up an analysis model, which significantly reduces the analysis time. However, material properties and mechanical behavior of welded structures cannot be expressed, and there is no sufficient verification for this in several industries. Moreover, few studies have reported on strength analysis, including the welding process; therefore, this study presents a simple modeling using commercial program based on the finite element method. The welding process is simulated by identifying the welding-heat-source variable through experiments and a value close to the measured deposited metal and fusion-zone size are obtained. A flow stress–strain curve based on a uniaxial tensile test is obtained and the tensile strength of the welded specimen is analyzed.
Meng Li,Geonho Shin,Jeongchan Lee,Seung Min Lee,Jungwoo Oh,Hi-Deok Lee 대한전자공학회 2018 Journal of semiconductor technology and science Vol.18 No.3
Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In0.53Ga0.47As junction was well formed without penetration of Ni-InGaAs into the In0.53Ga0.47As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.
Li, Meng,Shin, Geonho,Lee, Jeongchan,Lee, Seung Min,Oh, Jungwoo,Lee, Hi-Deok The Institute of Electronics and Information Engin 2018 Journal of semiconductor technology and science Vol.18 No.3
Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the $Ni-InGaAs/n-In_{0.53}Ga_{0.47}As$ junction was well formed without penetration of Ni-InGaAs into the $In_{0.53}Ga_{0.47}As$ substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.
Lee, Jeongchan,Li, Meng,Kim, Jeyoung,Shin, Geonho,Lee, Ga-won,Oh, Jungwoo,Lee, Hi-Deok The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.2
Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.