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OH, Jungwoo,HUANG, Jeff,OK, Injo,LEE, Se-Hoon,D. KIRSCH, Paul,JAMMY, Raj,LEE, Hi-Deok The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D<SUB>it</SUB>) and specific contact resistivity (<I>ρ<SUB>c</SUB></I>).</P>
Elsevier 2014 CURRENT APPLIED PHYSICS Vol.14 No.1
High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5 x 10(10)), and gate leakage current (similar to 10(-2)A/cm(2) at an EOT of 13.4 angstrom), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined similar to 100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. (C) 2013 Elsevier B.V. All rights reserved.
Moon, Jungwoo,Oh, Seogil,Kang, Taewook,Hong, Surin,Yi, Jongheop American Scientific Publishers 2006 Journal of nanoscience and nanotechnology Vol.6 No.11
<P>Molecular adsorption of bisphenol A (BPA) on three types of self-assembled monolayers with different functionalities, such as -CH3, -SH, and -COOH, was examined using surface plasmon resonance (SPR) spectroscopy. BPA molecules in an aqueous solution were easily adsorbed onto a hydrophobic surface compared to a hydrophilic surface. Sorption behavior of BPA into poly(2-methoxyethyl acrylate) (PMEA) layer, which is known as a biocompatible polymer, was also investigated. Sorption and desorption dynamics of BPA into PMEA were found to be very rapid and quite reversible. The swelling of PMEA by sorption of BPA results in the change in SPR angle and allows one to quantify the BPA concentration below 100 ppm. In addition, the transport mechanism of BPA within the membrane of organ can be inferred by the experimental results.</P>