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Numerical Study on Passive Crossbar Arrays Employing Threshold Switches as Cell-Selection-Devices
정두석,Hyung-Woo Ahn,Su-Dong Kim,Myunggi An,이수연,정병기 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
A read-out voltage margin of crossbar-array-based passive non-volatile memory employing one threshold switch and one memory switch (resistor) (1TS1R) unit structure was numerically evaluated for the worst-case pattern with respect to the row and column number of a crossbar array. The threshold switching behavior of amorphous GeSe, which has been recently reported by Jeong et al., was taken for the evaluation of the 1TS1R crossbar array. The calculation results identified that a pull-up voltage is of importance because of the highly non-linear current-voltage behavior of amorphous GeSe in the high resistance state.
Electric-field-enhanced Ionic Diffusivity in Electrolytes: A Model Study
정두석,김인호,이택성,이욱성,이경석,이도권 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.6
The time-dependent redistribution of mobile <i>A<sup>z+</usp></i> cations and <i>X<sp>z−</sup></i> anions in a AX solid electrolyte was calculated by solving the drift-diffusion equation. In this calculation, no first-order approximation was employed because a breakdown of the first-order approximation (FOA) probably takes place when the gradient of the chemical and/or the electrostatic potential in the electrolyte is high. Moreover, the differential diffusivity and mobility of the ions were evaluated in the electrolyte under various conditions. The calculated results were compared with those of FOA-based calculations.