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Jae-Sung Lee,Dae-Gab Lee,Seung-Woo Do,이용현 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.I
This paper is focused on the improvement of MOS device reliability related to hydrogen or deuterium atoms. The injection of these atoms into the gate oxide film was achieved through low-energy implantation at the back-end of a line for the purpose of passivation of dangling bonds at the SiO$_2$/Si interface. Experimental results are presented for the degradation of the 3-nm-thick gate oxide (SiO$_2$) under both hot-carrier-injection (HCI) and constant voltage stresses using p- and n-MOSFETs. Device parameters, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. The Si-D bonds (instead of Si-H) in the SiO$_2$ film were found to play a major role in suppressing the generation of oxide traps. However, when the concentration of deuterium is redundant in the gate oxide, excess traps are generated and degrade the performance. Our result suggests a novel method to incorporate deuterium in the MOS structure for reliability
췌장의 신경내분비종양의 임상양상 및 WHO 분류에 따른 예후
이용현(Yong Hyun Lee),손준호(Jun Ho Sohn),윤혁진(Hyuk Jin Yun),권형준(Hyung Jun kwon),천재민(Jae Min Chun),김상미(Sang Mi Kim),김상걸(Sang Geol Kim),황윤진(Yoon Jin Hwang),윤영국(Young Gook Yun) 한국간담췌외과학회 2010 한국간담췌외과학회지 Vol.14 No.3
Purpose: Clinical features of Pancreatic Neuroendocrine Tumors (PETs) vary according to the hormone secreted and to the heredity of the tumors. Malignant PETs are common among nonfunctioning PETs (NFTs) whereas the majority of functioning PETs (FTs) are benign. Our goal was to determine the clinical features and prognosis of PETs stratified by the WHO classification scheme and AJCC-UICC 7TH TNM staging. Methods: We selected for study 30 patients with PETs, including one case of nesidiolastosis, who presented at our clinic between April 1992 and June 2010. Clinicopathological features were studied retrospectively. PETs were classified as benign, uncertain malignant, well differentiated carcinoma, or poorly differentiated carcinomas by the WHO classification. For statistical analysis, Student"s t-test, the Chi-square test, and the Kaplan-Meier method were utilized. Results: Nine cases were FTs and twenty one cases were NFTs. The average size of the FTs was smaller than that of the NFTs (1.71 vs 4.33, p=0.04). The head of the pancreas was most commonly involved (33.3% of FTs; 47.6% of NFTs) but the locations of the tumors were not different. Insulinoma was the most common (66.7%, 6/9) among FTs. The incidence of malignant tumors was 33.3% and 55.0% among, respectively, FTs and NFTs. The 5-year disease-free survival rate of patients with benign PETs (FTs and NFTs), and of patients with functioning well-differentiated carcinomas was 100%. However, the 5-year disease-free survival rates of patients with nonfunctioning well- and poorly-differentiated carcinomas were 66.7% and 0%. Conclusion: Among patients with Pancreatic Neuroendocrine Tumors, malignant tumors are more common among NFTs than FTs. Poorly-differentiated carcinomas have a worse prognosis while all FTs regardless of their WHO classification fail to show any disease recurrence.
Pseudo MOSFET 기술에 의한 양성자 조사 SOl 웨이퍼의 캐리어 수명 분석
정성훈,이용현,이재성,권영규,배영호,Jung, Sung-Hoon,Lee, Yong-Hyun,Lee, Jae-Sung,Kwon, Young-Kyu,Bae, Young-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.9
Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.
MOSFET 게이트 산화막내 결함 생성 억제를 위한 효과적인 중수소 이온 주입
이재성(Jae-Sung Lee),도승우(Seung-Woo Do),이용현(Yong-Hyun Lee) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.7
중수소 처리된 3 ㎚ 두께의 게이트 산화막을 갖는 MOSFET를 제조하여 정전압 스트레스 동안의 게이트 산화막의 열화를 조사하였다. 중수소 처리는 열처리와 이온 주입법을 사용하여 각각 이루어졌다. 열처리 공정을 통해서는 게이트 산화막내 중수소의 농도를 조절하기가 힘들었다. 게이트 산화막내에 존재하는 과잉 중수소 결합은 열화를 가속시키기 때문에, 열처리 공정을 행한 소자에서 신뢰성이 표준공정에 의한 소자에 비해 저하되고 있음을 확인하였다. 그러나 중수소 이온 주입 방법을 통해서는 소자의 신뢰성이 개선됨을 확인하였다. 스트레스에 의한 게이트 누설 전류 변화 및 구동 특성 변화는 게이트 산화막내의 중수소 농도와 관련이 있으며, 이러한 특성은 적절한 공정 조건을 갖는 이온 주입법을 통해 개선할 수 있었다. 특히, 큰 스트레스 전압의 PMOSFET에서 중수소의 효과가 뚜렷하게 나타났으며, 이는 “hot” 정공과 중수소의 반응과 관련이 있는 것으로 판단된다. Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-㎚-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between “hot” hole and deuterium is involved in the generation of oxide trap.
산후조리원(産後調理院) 재원(在院) 산모(産母)의 산후조리(産後調理)에 대한 인식(認識) 조사(調査)
정재중 ( Jung Jae Joong ),송호림 ( Song Ho Lim ),배경연 ( Bae Kyeong Yeon ),이용현 ( Yong Hyun Lee ),임세영 ( Se Young Lim ),유상민 ( Sang Min Yoo ),김동일 ( Dong Il Kim ) 대한한방부인과학회 2005 大韓韓方婦人科學會誌 Vol.18 No.3
Purpose: 1. To analyze the cognition and realities of postpartum care and to aid the spread of oriental medicine in postpartum care. 2. Get a basic guideline of postpartum care home and O.M.D.`s role model of postpartum care. Methods: We studied the cognition and realities of postpartum care with questionnaire from May 2005 to July 2005, in postpartum care home at Gangdong-gu and Seocho-gu. 147 puerperants answered us. Results: Puerperants pay postpartum care for without regard to economic state. 59.2% of 147 puerperants replied that the reason of postpartum care at postpartum care home is for systematic care. Important selection guidelines of postpartum care home are expertness at infant and puerperant management. We can find that 78.2% of 147 puerperants will visit oriental medical clinic for postpartum care and 61.2% of 147 puerperants will take herb-medicine. Conclusion: Puerperants has well-expectation in postpartum care by oriental medicine. There is much room for extension of oriental medical province in postpartum care. So continuous publicity activities about oriental medical postpartum care are required.
양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작
이강희,김병길,이용현,백종무,이재성,배영호,Lee, Kang-Hee,Kim, Byoung-Gil,Lee, Yong-Hyun,Baek, Jong-Mu,Lee, Jae-Sung,Bae, Young-Ho 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.12
Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.
중수소 이온 주입에 의한 MOS 커패시터의 게이트 산화막 절연 특성 개선
서영호,도승우,이용현,이재성,Seo, Young-Ho,Do, Seung-Woo,Lee, Yong-Hyun,Lee, Jae-Sung 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.8
This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.
문예성(Yae-Sung Mun),고용훈(Yong-Hoon Go),이용현(Yong-Hyun Lee),이은혁(Eun-Hyuk Lee),강현아(Hyun-A Kang),김연재(Yun-Jae Kim),문송미(Song Mi Moon),황유진(You-Jin Hwang) 한국산학기술학회 2014 한국산학기술학회 학술대회 Vol.- No.-
다약재 내성을 나타내는 병원성 미생물에 의한 질병이 점점 많아지고 있다. 항생제 내성을 나타내는 유전자가 발현되어 항생제 내성을 나타내게 되고 저항성을 갖는다. 본 논문에서는 병원성 미생물인 methicillin-resistance Staphylococcus aureus (MRSA)가 다약재 내성을 나타내고 있는 것을 확인하고 다약재 내성을 나타나게 하는 유전자의 종류를 규명하고자 하였다.
BaTiO3/SiO2 로 구성된 아티퓨즈의 전기적 특성
이영민,이재성,이용현 ( Young Min Lee,Jae Sung Lee,Yong Hyun Lee ) 한국센서학회 1998 센서학회지 Vol.7 No.5
A novel antifuse has been developed for field programmable gate arrays (FPGA`s) as a voltage programmable link with Al/BaTiO₃/SiO₂/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of BaTiO₃ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on BaTiO₃(120Å)/SiO₂(120Å), the program voltage was about 14.4V and on-resistances were ranged between 40 and 50Ω. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/BaTiO₃ and TiW-silicide/SiO₂.