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Complementary FET로 열어가는 반도체 미래 기술
김상훈,이성현,이왕주,박정우,서동우,S.H. Kim,S.H. Lee,W.J. Lee,J.W. Park,D.W. Suh 한국전자통신연구원 2023 전자통신동향분석 Vol.38 No.6
With semiconductor scaling approaching the physical limits, devices including CMOS (complementary metal-oxide-semiconductor) components have managed to overcome yet are currently struggling with several technical issues like short-channel effects. Evolving from the process node of 22 nm with FinFET (fin field effect transistor), state-of-the-art semiconductor technology has reached the 3 nm node with the GAA-FET (gate-all-around FET), which appropriately addresses the main issues of power, performance, and cost. Technical problems remain regarding the foundry of GAA-FET, and next-generation devices called post-GAA transistors have not yet been devised, except for the CFET (complementary FET). We introduce a CFET that spatially stacks p- and n-channel FETs on the same footprint and describe its structure and fabrication. Technical details like stacking of nanosheets, special spacers, hetero-epitaxy, and selective recess are more thoroughly reviewed than in similar articles on CFET fabrication.
이윤식,정성근,황인록,양용석,이명래,서동우,Yi, Y.,Jeong, S.K.,Hwang, I.,Yang, Y.S.,Lee, M.L.,Suh, D. 한국전자통신연구원 2022 전자통신동향분석 Vol.37 No.2
Cosmic radiation environments having extremely high-energy particles and photons cause severe malfunctions of electrical components in space and terrestrial regions. In this study, we revisit basic knowledge on radiation effects in ICT electrical devices, such as single event effect, total ionizing dose, and displacement damage. To avoid such soft errors and system failures, we introduce essential technical approaches from the perspectives of materials, layouts, circuits, and systems, including current research trends. By considering several techniques and Space EEE part standards, we suggest possible directions that can invoke New Space Era technology.
황치선,홍성훈,황치영,조성목,김용해,서동우,심재식,이정익,이진호,Hwang, C.S.,Hong, S.H.,Hwang, C.Y.,Cho, S.M.,Kim, Y.H.,Suh, D.,Sim, J.S.,Lee, J.I.,Lee, J.H. 한국전자통신연구원 2018 전자통신동향분석 Vol.33 No.6
Metamaterials are artificial media that can control the properties of waves at will. Active photonic metadevice technologies cover the device and material technologies that control the visible and IR light through an external signal (mainly an electrical signal). The application areas of active photonic metadevices are tremendous for example holography, active HOE, bio imaging, IR imaging, telecommunication, and optoelectronic devices. In this paper, the technical trends and prospects of active metamaterials, active meta holography, active meta devices, nano-optical telecommunication devices, and IR imaging meta devices are reviewed.