http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 서동우 (검색결과 574 건)
- 무료
- 기관 내 무료
- 유료
-
병렬분기 방법을 이용한 박막 나선 인덕터의 Q 인자 향상
서동우,민봉기,강진영,백문철 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1
In the present paper we suggested a parallel branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on p-type silicon wafer (5∼15Ω-cm) under the standard CMOS process and it showed a enhanced qualify(Q) factor by more than 10 % with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with conventional spital inductors
-
-
-
-
-
-
-
서동우 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
The eects of the base thickness and the Ge prole on the DC, the small-signal, and the noise characteristics of SiGe heterostructure bipolar transistors (HBTs) fabricated using reduced-pressure chemical vapor deposition (RPCVD) were investigated. A thin triangular Ge prole was noted as being very eective in enhancing the cuto frequency (fT ) while a thick base prole was good for both maximum oscillation frequency (fmax) and noise performance. For the noise characteristics, a thin base was inferior to a thick base. The importance of base optimization in high frequency applications of SiGe HBTs is discussed on the basis of the analyzed DC, small-signal, and noise characteristics.
-
-
ScienceON
KISS연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
