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문용태,이현휘,노도영,박성주,김동준,박진섭,오정탁 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated. The improvement in the electrical properties of MQW light-e1mitting diodes with increasing barrier growth temperature from 700 to 840 C is attributed to a decrease in the number of deep-level-related defects in the barrier layers. The interface atness and the structural properties in the MQWs were signicantly improved with increasing barrier-layer growth temperature and are attributed to an increase in the in-plane domain size and to the atomic stacking order in GaN barrier layers. The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaNmultiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition wereinvestigated. The improvement in the electrical properties of MQW light-e1mitting diodes withincreasing barrier growth temperature from 700 to 840 C is attributed to a decrease in the numberof deep-level-related defects in the barrier layers. The interfaceatness and the structural propertiesin the MQWs were signicantly improved with increasing barrier-layer growth temperature and areattributed to an increase in the in-plane domain size and to the atomic stacking order in GaNbarrier layers.
기업유형에 따른 기업특성이 기술혁신 형태에 미치는 영향 - 베이지안 다항로짓모형을 이용한 분석 : 기업유형에 따른 기업특성이 기술혁신 형태에 미치는 영향
문창호,박용태 한국산업경영시스템학회 2004 한국산업경영시스템학회 학술대회 Vol.2004 No.추계
Using the cluster analysis based on the information source and object of technological innovation, technological innovation types of domestic manufacturing firms are categorized into market-oriented external dependent sector, low-profile self-development sector, capital-intensive self-development sector, low-profile technology-activated sector and cost-oriented self-development sector. To analyze the corporation characteristics that determine the three technological innovation types of product innovation, product improvement and process innovation, the bayesian multinomial logit model is employed. This study shows that the types of technological innovation are determined by the firm and the sector characteristics. The study also finds that there are some firm specific characteristics that affect the type of technological innovation, while some other firm characteristics have an effect depending on the sector they are in.
박승환,문용태,한대섭,박중서,오명석,안도열 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.3
The light emission properties of InGaN/GaN quantum well (QW) light-emitting diodes with non-square layers with graded, triangular, and parabolic shapes are investigated using multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The spontaneous emission peak of non-square QW structures is shown to be improved compared to a conventional QW structure. In particular, the parabolic QW structures shows a slightly larger emission peak than the graded or triangular QW structure. This can be explained by the fact that a smaller In composition in the well is needed to give a transition wavelength of 440 nm.
유기금속화학기상증착법을 이용한 청색 발광 InGaN/GaN MQWs의 성장에 관한 연구
金東俊(Dong-Joon Kim),文用泰(Yong-Tae Moon),宋根萬(Keun-Man Song),朴成柱(Seong-Ju Park) 大韓電子工學會 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.12
저압 유기금속화학기상증착법을 이용하여 효율적인 청색 발광을 하는 InGaN/GaN multiple quantum wells(MQWs)을 성장시키고, InGaN/GaN MQWs의 광학적 및 계면 구조 특성을 고찰하였다. 보다 효율적인 청색 발광을 하는 InCaN/CaN MQWs을 성장시키기 위하여, MQWs의 성장온도 및 InGaN 우물층과 GaN 장벽층의 두께를 변화시켜 최적 조건을 확립하였다. 특히, GaN 장벽층의 두께 변화가 InCaN 우물층과 GaN 장벽층간 계면의 구조적 특성에 지대한 영향을 미침을 확인하였다. X-ray 회절분석결과와 고분해능의 투과전자현미경 사진 분석으로부터 MQW 구조의 InCaN 우물층과 GaN 장벽층간의 계면이 매우 급준함을 발견할 수 있었다. 또한, 상온 PL 스펙트럼에서 72.6meV의 매우 좁은 반치폭을 갖는 단일 피크가 463.5㎚에서 확인되었다. We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the hihg resolution cross sectional transmission electron microscope image of MQW structures revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5㎚ with a narrow full width at half maximum of 72.6meV.