The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated. The improvement in the electrical properties of MQW l...
The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated. The improvement in the electrical properties of MQW light-e1mitting diodes with increasing barrier growth temperature from 700 to 840 C is attributed to a decrease in the number of deep-level-related defects in the barrier layers. The interface atness and the structural properties in the MQWs were signicantly improved with increasing barrier-layer growth temperature and are attributed to an increase in the in-plane domain size and to the atomic stacking order in GaN barrier layers.