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"주택용 BESS에 적용하기 위한 재활용 셀의 성능에 관한 연구"
김필중,양성수 한국전기전자학회 2024 전기전자학회논문지 Vol.28 No.1
"주택용 BESS에 적용하기 위한 재활용 셀 성능을 파악하기 위해 지난 5년 동안 사용한 셀을 선택하였다. 시험에 사용된 셀의 기본사양은 공칭 전압이 3.7[V], 공칭 용량이 2,200[mAh], 충전 전압이 4.05[V], 연속방전전류가 1[C](2,200[mA]), 연속충전전류가0.5[C](1,100[mA]) 이다. 새 셀의 경우 내부저항은 21.3±1[mΩ]인데, 재활용 셀의 경우 평균 내부저항이 25.38[mΩ]로 나타나 약19.1[%] 상승하였다. 충ㆍ방전 용량은 새 셀에 비해 약 18.9~19.3[%] 정도 낮게 나타났다. 내부저항과 충ㆍ방전 용량이 셀의 노화에 상호 밀접하게 연관되어 있으므로 BESS에 적용할 셀은 초기 내부저항보다 1.5배 이하이고 70[%] 이상의 충ㆍ방전 용량 성능을갖는 제품을 사용할 필요가 있다." "To determine the performance of recycled cells for application to residential BESS, cells used over the past 5 years were selected. The basic specifications of the cell used in the test are nominal voltage of 3.7[V], nominal capacity of 2,200[mAh], charging voltage of 4.05[V], continuous discharge current of 1[C](2,200[mA]), continuous charging current of 0.5[C](1,100[mA]). For new cells, the internal resistance was 21.3±1[mΩ], but for recycled cells, the average internal resistance was 25.38[mΩ], an increase of about 19.1[%]. The chargeㆍdischarge capacity was approximately 18.9~19.3[%] lower than that of a new cell. Because internal resistance and chargeㆍdischarge capacity are closely related to cell aging, cells to be applied to BESS need to use products with an initial internal resistance of 1.5 times or less and a chargeㆍdischarge capacity performance of 70[%] or more."
김필중,김상하 충남대학교 기초과학연구소 1996 忠南科學硏究誌 Vol.23 No.2
Good performance of the data link layer which is using sliding window protocol requires selection of optimal timeout duration. Timeout duration can be selected based on RTT. But, due to the variable environmental factors of channels, selection of optimal timeout duration is not easy task. This paper suggests additional method that can be used to identify frame loss even before timeout occurs. Using this additional method(called Fast Retransmission method), sender detects transmission error on a certain frame early and retransmits the frame immediately without further waiting for timeout event. This method loosen up the requirement of stringent timeout value on data link layer and gives the performance quite closed to the one that can be obtained with optimal timeout value.
반도체 메모리에 사용되는 전압발생기의 펌핑 커패시터 개선
김필중,구대성,윤중현,김종빈 조선대학교 전자정보통신연구소 2002 電子情報通信硏究所論文誌 Vol.5 No.1
In semiconductor memory, the kinds of voltage generator are high voltage generator, negative voltage generator, drain voltage generator and etc. The relevant circuits supported voltage generator, are clock generator, sense amplifier, voltage regulator and etc. The voltage generator consists of MOS diodes and MOS capacitors. To get the out voltage with sufficient charge, the MOS capacitors are big size. These MOS transistors can be adapted only on the EEPROM process. Thus, in this study, we designed stacked metal capacitor. This capacitor is small size bat can get capacitance. This capacitor is designed to comb type using metal-line and poly-line. The size of designed capacitor is 208×52 ㎛2 and the capacitance is about 4pF. The stacked metal capacitor can get much capacitance of 5~6 times than single plane capacitor. Also this capacitor will be easy adapted in sub-micro process technology of semiconductor memory. And this capacitor can be adapted on all memory process.
고집적 메모리의 yield 개선을 위한 전기적 구제회로
김필중,김종빈 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.4
Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.