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연마불균일도에 영향을 미치는 패드 표면특성에 관한 연구
박기현,박범영,김형재,정해도,Park, Ki-Hyun,Park, Boum-Young,Kim, Hyoung-Jae,Jeong, Hae-Do 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
Pad surface characteristics such as roughness, groove and wear rate of pad have a effect on the within wafer non-uniformity(WIWNU) in chemical mechanical polishing(CMP). Although WIWNU increases as the uniformity of roughness(Rpk: Reduced peak height) becomes worse in an early stage of polishing time, WIWNU decreases as non-uniformity of the Rpk value. Also, WIWNU decreases with the reduction of the pad stiffness, though original mechanical properties of pad are unchanged by the grooving process. In addition, conditioning process causes the inequality of pad wear during in CMP. The profile of pad wear generated by the conditioning process has a significant effect on the WIWNU. These experiments results could help to understand the effect of pad surface characteristics in CMP.
CMP 패드 강성에 따른 산화막 불균일성(WIWNU)에 관한 연구
박기현,정재우,박범영,서헌덕,이현섭,정해도,Park, Ki-Hyun,Jung, Jae-Woo,Park, Boum-Young,Seo, Heon-Deok,Lee, Hyun-Seop,Jeong, Hae-Do 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.6
Within wafer non-uniformity(WIWNU) improves as the stiffness of pad decrease. We designed the pad groove to study of pad stiffness on WIWNU in Chemical mechanical polishing(CMP) and measured the pad stiffness according to groove width. The groove influences effective pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. An Increase of the apparent contact area of pad by groove width results in decrease of effective pad stiffness. WIWNU and profile of removal tate improved as effective pad stiffness decreased. Because grooving the pad reduce its effective stiffness and it makes slurry distribution to be uniform. Futhermore, it ensures that pad conforms to wafer-scale flatness variability. By grooving the top pad, it is possible to reduce its stiffness and hence reduce WIWNU and edge effect.
CMP 패드 두께 프로파일 측정 장치 및 방법에 관한 연구
이태경,김도연,강필식,Lee, Tae-kyung,Kim, Do-Yeon,Kang, Pil-sik 한국산업융합학회 2020 한국산업융합학회 논문집 Vol.23 No.6
The chemical mechanical planarization (CMP) is a process of physically and chemically polishing the semiconductor substrate. The planarization quality of a substrate can be evaluated by the within wafer non-uniformity (WIWNU). In order to improve WIWNU, it is important to manage the pad profile. In this study, a device capable of non-contact measurement of the pad thickness profile was developed. From the measured pad profile, the profile of the pad surface and the groove was extracted using the envelope function, and the pad thickness profile was derived using the difference between each profile. Thickness profiles of various CMP pads were measured using the developed PMS and envelope function. In the case of IC series pads, regardless of the pad wear amount, the envelopes closely follow the pad surface and grooves, making it easy to calculate the pad thickness profile. In the case of the H80 series pad, the pad thickness profile was easy to derive because the pad with a small wear amount did not reveal deep pores on the pad surface. However, the pad with a large wear amount make errors in the lower envelope profile, because there are pores deeper than the grooves. By removing these deep pores through filtering, the pad flatness could be clearly confirmed. Through the developed PMS and the pad thickness profile calculation method using the envelope function, the pad life, the amount of wear and the pad flatness can be easily derived and used for various pad analysis.
Effect of spray nozzle position on pad temperature distribution and wafer non-uniformity
이기훈,이다솔,정선호,이동환,정해도 대한기계학회 2019 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.33 No.12
During chemical mechanical planarization (CMP), the pad surface temperature generally increases due to the friction between the wafer and the pad. A pad with a large sliding distance generates more heat compared to pad with small sliding distance. A nonuniform temperature distribution on the pad causes its mechanical properties to become uneven, which are affected by within-wafer non-uniformity (WIWNU). This study aims to improve the polishing uniformity by controlling the temperature profile of the pad surface for each spray nozzle position. When the slurry was sprayed on an area for which a large slide distance was measured, a uniform temperature distribution and improved WIWNU were obtained.
산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향
배재현,이현섭,박재홍,니시자와 히데키,키노시타 마사하루,정해도,Bae, Jae-Hyun,Lee, Hyun-Seop,Park, Jae-Hong,Nishizawa, Hideaki,Kinoshita, Masaharu,Jeong, Hae-Do 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.
Kim, P.,Seok, J. Elsevier Scientific Pub. Co 2011 Journal of non-Newtonian fluid mechanics Vol.166 No.17
In this paper, the first analytical endeavor into the fluid dynamic modeling of an MR polishing process is reported. The velocity and shear stress fields of an MR fluid running through a thin slippery channel with a slightly varying height are analytically solved using a bi-viscosity constitutive model and a Navier slip model. Estimations of the mechanical power density and the total power per unit depth applied onto the channel surfaces are also presented. Analytical solutions for the Couette-Poiseuille flow behavior of a bi-viscous fluid flowing through either parallel or non-uniform channels are obtained, and the associated necessary and sufficient conditions characterizing a total of 5 types of flow are derived. The behaviors of the fluid are examined through the use of a parametric diagram of Bingham number (Bn) and Couette number (Co), i.e., Bn-Co or 1/Bn-1/Co diagram, by changing the geometric and operating conditions. Using these diagrams, variations in the rheological characteristics of the flow are investigated in great detail, with a special focus on the movement of the pseudo-core region. Finally, the mechanical power density field obtained for the flow in a converging-diverging channel is used to explain the wear mechanism in the MR polishing process. The effects of the power density field and the total power on the material removal rate (MRR) and the within-workpiece nonuniformity (WIWNU) with respect to various geometric and operating conditions are evaluated.
이경진,서용진,이우선 대불대학교 2003 大佛大學校大學院 硏究論文集 Vol.2 No.1
In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post- CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and law non-uniformity. Therefore, we propose two-step CMP process as follows ; In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.