http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
이우선,김상용,서용진,박진성,김창일 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8
Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.
가스센서 적용을 위한 SnO<sub>2</sub> 박막의 CMP 특성 연구
이우선,최권우,김남훈,박진성,서용진,Lee, Woo-Sun,Choi, Gwon-Woo,Kim, Nam-Hoon,Park, Jin-Seong,Seo, Yong-Jin 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.12
SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.
RF 스퍼터링법에 의한 IC 소자용 티탄산스트롬튬 증착막의 전류-전압 특성
이우선,김남오,정용호 조선대학교 에너지.자원신기술연구소 1998 에너지·자원신기술연구소 논문지 Vol.20 No.2
The objective of this study is to deposited the preparation of SrTiO₃ dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. The result indicated that lower leakage current and the capacitance-voltage(C-V) behavior of MIS structures represented dielectric permittivity in the accumulation region and also good Si/SrTiO₃ interface. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The conductivity properties of films deposited on silicon substrates were very high conductivity. Capacitance of the films properties were the highest value(1000㎊) and dependent on substrate temperature. The SrTiO₃ films was improved with the increase of the substrate temperature and decrease of the ambient oxygen pressure. SEM analyses showed that SrTiO₃ films had a uniform and fine grain structure.
전력 MOSFET의 V_(GS)와 V_(DS)전압 검출에 의한 온도측정
이우선,조금배,최한수 조선대학교 생산기술연구소 1988 生産技術硏究 Vol.10 No.1
One of the most important parameters of any semiconductor device is its operating temperature. The operating temperature is important in determining the reliability and operating life of the device, and it also has a strong influence on many of the electrical pramatcrs of the device The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate to source bias voltage. In this study, the decision method of the internal temperature measurement of power MOSFET by V_(GS) (Gate-Source Voltage) and V_(DS) (Drain-Source Voltage) methods are presented.