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Ahn, J.H.,Heo, W.,Jung, C.R.,Lee, N.-E. Elsevier 2011 Current Applied Physics Vol.11 No.5
<P><B>Abstract</B></P><P>In this study, changes in the surface morphology of single crystalline Si during chemical dry etching using F radicals and direct-injected nitric oxide (NO) gas were investigated. When NO gas was injected into a chamber supplied with F radicals from NF<SUB>3</SUB> input gas generated from a remote plasma source, the single crystalline Si surface was textured and roughened during the chemical dry etching. It was found that the roughened morphology varied as a function of the NO gas flow rate, the total gas flow rate of NF<SUB>3</SUB> and NO gases, and the etching time. The roughened morphology that developed during the fast chemical dry etching of silicon led to a reduction in the reflectance of visible light.</P> <P><B>Highlights</B></P><P>► Single crystalline Si surface was effectively textured and roughened during the chemical dry etching using F radicals and direct-injected nitric oxide (NO) gas. ► The roughened morphology of the textured surface varied as a function of the NO gas flow rate, the total gas flow rate of NF3 and NO gases, and the etching time. ► The roughened morphology of silicon led to the reduced reflectance as low as 6.07% at a wavelength of 750 nm.</P>
Yonughwan Lee,Jonghyuck Lee,Yonggun Shul,임상우 한국공업화학회 2008 Journal of Industrial and Engineering Chemistry Vol.14 No.1
In this study, the mechanism of vertically aligned porous silicon formation was examined. Silicon wafers with various resistivities and electrolytes containing different HF concentrations were used to explain porous silicon formation by the reaction at the silicon/electrolyte interface. Total pore volume increased proportionally to the current applied and anodization time. As the concentration of HF increased, pore depth and total pore volume formed in silicon anodization increased, then decreased beyond the optimum point. At a given applied current, total pore volume formed by anodization increased with an increase in resistivity of silicon wafer, but then decreased. From the mechanism of silicon etching and schematic isoetch contour of silicon suggested in this study, it is concluded that the formation of porous silicon is determined by an accumulation of F near the silicon/electrolyte interface in silicon anodization. # 2007 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
Au/Ag Bilayered Metal Mesh as a Si Etching Catalyst for Controlled Fabrication of Si Nanowires
Kim, Jungkil,Han, Hee,Kim, Young Heon,Choi, Suk-Ho,Kim, Jae-Cheon,Lee, Woo American Chemical Society 2011 ACS NANO Vol.5 No.4
<P>Au/Ag bilayered metal mesh with arrays of nanoholes were devised as a catalyst for metal-assisted chemical etching of silicon. The present metal catalyst allows us not only to overcome drawbacks involved in conventional Ag-based etching processes, but also to fabricate extended arrays of silicon nanowires (SiNWs) with controlled dimension and density. We demonstrate that SiNWs with different morphologies and axial orientations can be prepared from silicon wafers of a given orientation by controlling the etching conditions. We explored a phenomenological model that explains the evolution of the morphology and axial crystal orientation of SiNWs within the framework of the reaction kinetics.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2011/ancac3.2011.5.issue-4/nn2003458/production/images/medium/nn-2011-003458_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn2003458'>ACS Electronic Supporting Info</A></P>
pH 조건에 따른 기공성 실리콘의 나노구조 및 광학적 특성의 변화
김효한,조남희,Kim, Hyo-Han,Cho, Nam-Hee 한국세라믹학회 2013 한국세라믹학회지 Vol.50 No.4
The effect of chemical treatments of porous silicon in organic solvents on its nanostructural and optical features was investigated. When the porous Si was dipped in the organic solvent with various PH values, the morphological, chemical, and structural properties of the porous silicon was sensitively affected by the chemical conditions of the solvents. The size of silicon nanocrystallites in the porous silicon decreased from 5.4 to 3.1 nm with increasing pH values from 1 to 14. After the samples were dipped in the organic solvents, the Si-O-H bonding intensity was increased while that of Si-H bonding decreased. Photoluminescence peaks shifted to a shorter wavelength region in the range of 583 to 735 nm as the pH value increased. PL intensity was affected by the size as well as the volume fraction of the nanocrystalline silicon in the porous silicon.
Kim Woo Jae,Bang In Young,Kim Ji Hwan,Park Yeon Soo,Kwon Hee Tae,Shin Gi Won,Kang Min-Ho,Cho Yongjun,Kwon Byung-Hyang,Kwak Jung Hun,Kwon Gi-Chung 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.79 No.3
Reactive ion etching of silicon oxide and silicon nitride was conducted by the injection of nitrogen trifluoride (NF3) and nitrogen oxide trifluoride gas (F3NO). The etching process was studied using a residual gas analyzer (RGA) and optical emission spectroscopy (OES); this included confirming and comparing the characteristics of the F3NO plasma to that of the NF3 plasma by discharging and measuring the pure NF3 plasma and F3NO plasma. Furthermore, silicon oxide and silicon nitride etching were performed using a process gas (NF3, F3NO) and an argon mixture. The plasma etching process was similarly diagnosed by RGA and OES, and the etch rate was calculated by measuring the reflection. The etch rate of silicon oxide during F3NO/Ar plasma etching is approximately 94% of that for NF3/Ar plasma etching and the etch rate of silicon nitride is approximately 76% of that for NF3/Ar plasma etching under the same conditions. The RGA and OES measurements confirmed that more O+, NO+, and O2 + ions were generated in the F3NO plasma than in the NF3 plasma. This difference makes it possible to confirm the variation in etch rates between silicon oxide and silicon nitride.
Cu-Cu 패턴 직접접합을 위한 습식 용액에 따른 Cu 표면 식각 특성 평가
박종명,김영래,김성동,김재원,박영배,Park, Jong-Myeong,Kim, Yeong-Rae,Kim, Sung-Dong,Kim, Jae-Won,Park, Young-Bae 한국마이크로전자및패키징학회 2012 마이크로전자 및 패키징학회지 Vol.19 No.1
Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다. Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.
Seung-Wan Yoo,Chulhee Cho,Kyungtae Kim,Hyochang Lee,Shinjae You 한국진공학회(ASCT) 2021 Applied Science and Convergence Technology Vol.30 No.4
Fluorocarbon (C7F14, C7F8) plasmas are investigated to verify their etching characteristics as an alternative etchant of SiO₂ etch process because C7F8 and C7F14 precursors are expected to have low Global warming potentials. Comparing the etch results of C4F8, C7F14, and C7F8 plasmas, C7F8 provides the highest selectivity for etching SiO₂ at a moderate etching rate of the three fluorocarbons. C4F8 and C7F14 plasmas show similar magnitudes of selectivity at the same O₂ injection. O₂ addition is used to control densities of carbon species and optimize etching conditions. From comparison of the species existing in the C4F8, C7F14, and C7F8 plasmas by the electron-emitting source, CF radicals and carbon atoms are important in determining the remarkable selectivity of C7F8 plasma. This understanding is verified using X-ray photoelectron spectroscopy analysis.
장윤창,노현준,박설혜,정상민,Sanywon Ryu,권지원,김남균,김곤호 한국물리학회 2019 Current Applied Physics Vol.19 No.10
A phenomenology-based virtual metrology (VM) for monitoring SiO2 etching depth was proposed by Park (2015). It achieved high prediction accuracy by introducing newly developed plasma information (PI) variables as designated inputs, called PI-VM. The PI variables represent the state of the plasma, the sheath, and the target during the process. We investigate how a PI variable can help to improve prediction accuracy of VM and how it plays a special role in the statistical selection. We choose only PIEEDF among the three PI variables to focus on the investigation. The PIEEDF is determined from the ratio of line-intensities of optical emission spectroscopy. We apply Pearson's correlation filter (PCF), principal component analysis (PCA), and stepwise variable selection (SVS) as statistical selection methods on the variables set including PIEEDF or not. Multilinear regression is used to model the VM. This study reveals that PIEEDF variable is a good variable in terms of independence from other input variables and explanatory power for an output variable. Especially, VM using SVS method applied to variable sets including PIEEDF achieves the highest accuracy, comparable to Park's PI-VM. This study shows that PIEEDF variable is particularly useful for monitoring of the fine variations in semiconductor manufacturing process and it also extends the utilization of OES sensor data.