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염근영,김양수,이준희,Thuy. T. T. Pham,임종태 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
SiO2-like thin films were deposited at low temperature (<50 ℃) by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with a pin-to-plate type dielectric barrier discharge (DBD) and a gas mixture containing hexamethyldisilazane (HMDS)/Ar/O2. The film's characteristics were investigated as a function of the HMDS flow rate. Increasing the HMDS flow rate from 100 sccm to 500 sccm increased the deposition rate almost linearly from 46.4 nm/min to 141.1 nm/min. However, increasing the HMDS flow rate increased impurities such as C and H and the surface roughness of the deposited lm. Fourier transform infrared measurement showed an increase of -OH and -(CH3)x (x = 1, 2 or 3) in the film with increasing HMDS flow rate. The increased surface roughness and impurities in the deposited lm are believed to be related to incompletely dissociated HMDS at higher HMDS flow rates. By optimizing the oxygen flow rate and the HMDS flow rate, we believe that a SiO2 thin film with low impurity and low surface roughnesses can be obtained. In this experiment, with the HMDS flow rate in the range of 100 ∽ 200 sccm, SiO2-like thin films having low surface roughness and low impurities (<3.7 % C) could be obtained.
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Cylindrical Magnetron을 사용한 실리콘의 반응성 이온 건식식각의 특성에 관한 연구
염근영,Yeom, Geun-Yeong 한국재료학회 1993 한국재료학회지 Vol.3 No.4
Helmholz구성을 가진 두개의 전자석에 의해 작동되는 RF cylindrical magnetron을 사용하여 이의 플리즈마 성질을 가한 자장의 함수로 조사하고, 또한 $CHF_3$와 $CF_4/H_2$를 3mTorr의 낮은 압력하에서 사용하여 실리콘의 반응성 이온 건식식각 특성을 조사하였다. 또한 여러 자장의 크기 및 개스 분위기하에서 식각한 실리콘으로 제조한 Schottky다이오드의 전류-전압 특성으로 식각으로 인한 실리콘의 손상정도를 측정하였다. Cylindrical magnetron에 가한 자장을 증가시킴에 따라 플라즈마내이온밀도 및 분해될 개스밀도(radical density)가 직선적으로 증가하였으며 시편이 위치한 전극에 유도되는 직류 자기 바이아스 전압(dc self-bais voltage)은, 반면, 지수적인 감소를 하였다. 100Gauss부근의 자장을 가한 경우에 최대의 식각속도를 갖고 이때의 실리콘의 식각속도가 자장을 가하지 않은 경우에 비해서 5배정도로 증가하였으며, 전지적인 특성 역시 습식방법을 사용하여 식각한 실리콘에 가까운 정도의 이온 손상이 없느 식각상태를 얻을 수 있었다. Using a RF cylindrical magnetron operated with two electromagnets having a Helmholz configuration, RF magnetron plasma properties and characteristics of reactive ion ething of Si were investigated as a function of applied magnetic field strengths using 3mTorr $CF_4/H_2$ and $CHF_3$. Also, I-V characteristics of Schottky diodes, which were made of silicons etched under different applied magnetic field strengths and gas environments, were measured to investigate the degree of radiation damage during the reactive ion etching. As the magnetic field strent;th increased, ion densities and radical densities of the plasmas were increased linearly, however, the dc self-bias voltages induced on the powered electrode, where the specimen are located, were decreased exponentially. Maximum etch rates, which were 5 times faster than that etched without applied magnetic filed, were obtained using near lOOGauss, and, under these conditions, little or no radiation damages on the etched silicons were found.
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Blue Organic Light-Emitting Diodes Fabricated by Using an Enhanced Hole-Blocking Property
임종태,염근영,정창현,이준희,배정운,김미숙 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
Blue-emitting organic light-emitting diodes (OLEDs) have fabricated by using a hole-blocking layer, bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum (III) (24MeSAlq). The device of glass/ITO/2-TNATA (60 nm)/NPB (15 nm)/24MeSAlq (20 nm)/Alq3 (45 nm)/LiF (1 nm)/Al (100 nm) was fabricated by applying a principle confining an exciton recombination zone into a hole-transporting layer, resulting in a maximum electroluminescent peak at 446 nm originating from a 4,4’-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB) emissive layer. Among q2AlOR-type aluminum derivatives (q = 8-quinolinolato ligand; Al = aluminum; OR = aryloxy or siloxy ligand), 24MeSAlq with a highest occupied molecular orbital (HOMO) energy level of 6.14 eV exhibits excellent hole-blocking properties compared to bis(2-methyl-8-quinolinolato)(4- phenylphenolato)aluminum (III) (BAlq) with a HOMO energy level of 5.88 eV, and it generates deep-blue light efficiently from the NPB layer.
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