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임승영,김나래,장기원,강대일,박정민 한국도시환경학회 2019 한국도시환경학회지 Vol.19 No.4
This study investigated the emission characteristics of particulate matter from facilities that use SRF and Bio-SRF. It also proposed improvement measures for quality standards of SRF & Bio-SRF through component analysis of SRF & Bio-SRF. PM, PM10, and PM2.5 concentrations from SRF boilers were found to be 3.18 mg/m3, 1.08 mg/m3, and 0.49 mg/ m3, respectively and those from Bio-SRF boilers 4.33 mg/m3, 0.77 mg/m3, and 0.27 mg/m3, respectively. The analysis of the heavy metals (Cd, Pb, Cr, Cu, Ni, and Zn) showed that all items were found to have lower concentrations than the emission standards. The average concentrations of HCl from Bio-SRF and SRF were 3.09 ppm and 9.25~14.70 ppm, respectively. However, in case of Zn, which has an emission standard but is not included in the SRF quality standard, 226.1 mg/kg was analyzed from SRF and 43.3 mg/kg from Bio-SRF on average. Therefore, inclusion of Zn in the SRF quality standard needs to be considered in the future. 본 연구는 고형연료제품인 SRF와 Bio-SRF를 사용하는 시설을 중심으로, 입자상물질 배출특성 조사와 고형연료에 대한 성분분석 등을 통해 SRF와 Bio-SRF의 품질기준에 관한 개선방안을 제안하였다. 고형연료 사용시설에서 배출되는 먼지, PM10, PM2.5의 평균농도는 SRF 사용시설 3.18 mg/m3, 1.08 mg/m3, 0.49 mg/m3, Bio-SRF 사용시설 4.33 mg/m3, 0.77 mg/m3, 0.27 mg/m3로 조사되었다. 중금속(Cd, Pb, Cr, Cu, Ni, Zn) 분석 결과는 모든 항목이 배출허용기준 이하의낮은 농도로 검출되었다. 염화수소의 농도는 Bio-SRF 사용시설에서는 3.09 ppm, SRF 사용시설에서는 9.25~14.70 ppm 으로 나타났다. 고형연료제품 품질기준 항목에는 없지만 배출허용기준이 설정되어 있는 아연의 경우 SRF 제품의 평균농도는 226.1 mg/kg, Bio-SRF 제품은 43.3 mg/kg으로 중금속 분석 항목 중 가장 높은 농도로 나타나 향후, 고형연료제품 품질기준 개선 시 고려가 필요하다.
Gender Differences in Aggression-related Responses on EEG and ECG
임승영,Gwonhyu Jin,정진주,염지우,제갈장환,이상임,조정아,이석규,이영미,김대환,배미정,허진화,문제일,이창훈 한국뇌신경과학회 2018 Experimental Neurobiology Vol.27 No.6
Gender differences in aggression viewed from an evolutionary and sociocultural perspective have traditionally explained why men engage in more direct and physical aggression, and women engage in more indirect and relational aggression. However, psychological and behavioral studies offer inconsistent support for this theory due to personal or social factors, and little is known about the gender-based neurobiological mechanisms of aggression. This study investigates gender differences in aggression through an analysis of electroencephalography (EEG) and electrocardiography (ECG) based neurobiological responses to commonly encountered stimuli, as well as psychological approaches in healthy Korean youth. Our results from self-reports indicate that overall aggression indices, including physical and reactive/overt aggression, were stronger in men. This agrees with the results of previous studies. Furthermore, our study reveals prominent gender-related patterns in γ signals from the right ventrolateral frontal cortex and changes in heart rate through stimulation by aggressive videos. In particular, gender differences in EEG and ECG responses were observed in response to different scenes, as simple aversion and situation-dependent aggression, respectively. In addition, we discovered decisive gender-distinct EEG signals during stimulation of the situation-dependent aggression regions within the right ventromedial prefrontal and ventrolateral frontal regions. Our findings provide evidence of a psychological propensity for aggression and neurobiological mechanisms of oscillation underlying gender differences in aggression. Further studies of oscillatory responses to aggression and provocation will expand the objective understanding of the different emotional worlds between men and women.
김태수,임승영,박용근,정건우,송정훈,차호영,한상우 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.11
We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent (F-D) capacitance-voltage (C-V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage (V th ). A drastic voltage shift in the C-V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.